Composite Transistors XN0F256 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ■ Absolute Maximum Ratings Ta = 25°C 3 2 0.4±0.2 2.8+0.2 –0.3 6 1 (0.65) • Two elements incorporated into one package (Collector-coupled transistors with built-in resistor) • Low collector-emitter saturation voltage VCE(sat) • Reduction of the mounting area and assembly cost by one half 5 1.50+0.25 –0.05 4 ■ Features 5˚ For muting 0.16+0.10 –0.06 0.30+0.10 –0.05 0.50+0.10 –0.05 Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 600 mA Total power dissipation PT 300 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1.1+0.2 –0.1 Symbol 0 to 0.1 Parameter 1.1+0.3 –0.1 10˚ 1: Emitter (Tr1) 2: Collector 3: Emitter (Tr2) EIAJ: SC-74 4: Base (Tr2) 5: N.C. 6: Base (Tr1) Mini6-G1 Package Marking Symbol: 6A Internal Connection 4 5 Tr2 3 6 Tr1 2 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 1 µA, IE = 0 30 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 20 V Emitter-base voltage (Collector open) VEBO IE = 1 µA, IC = 0 5 Collector-base cutoff current (Emitter open) ICBO VCB = 30 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0 Forward current transfer ratio hFE VCE = 5 V, IC = 50 mA Collector-emitter saturation voltage VCE(sat) Input resistance R1 Transition frequency fT Conditions Min Typ IC = 50 mA, IB = 2.5 mA VCB = 10 V, IE = −50 mA, f = 200 MHz Unit V 100 −30% Max 4.7 200 1 µA 1 µA 600 80 mV +30% kΩ MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: July 2003 SJJ00120BED 1 XN0F256 PT Ta IC VCE Ta = 25°C 300 200 25 1.6 mA 1.2 mA 400 0.8 mA 200 0.4 mA 100 0 40 80 120 160 0 15 10 Collector-emitter saturation voltage VCE(sat) (V) 25°C Ta = 75°C 60 −25°C 40 20 0.5 1.0 1.5 4 10 5 0 6 0 2.0 Base-emitter voltage VBE (V) 2.5 0.1 Ta = 75°C −25°C 1 10 100 Collector current IC (mA) SJJ00120BED 0.4 0.6 0.8 1.0 1.2 hFE IC 25°C 0.01 0.2 Base current IB (mA) 600 IC / IB = 20 1 0.001 0 3 VCE(sat) IC VCE = 5 V 80 2 Collector-emitter voltage VCE (V) IC VBE 100 1 Forward current transfer ratio hFE 0 120 Collector current IC (mA) 20 5 Ambient temperature Ta (°C) 0 VCE = 5 V IB = 2.0 mA Collector current IC (mA) 400 0 2 IC I B 30 600 Collector current IC (mA) Total power dissipation PT (mW) 500 1 000 VCE = 5 V 500 Ta = 75°C 25°C 400 −25°C 300 200 100 0 1 10 100 Collector current IC (mA) 1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL