Composite Transistors XN04504 (XN4504) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.30+0.10 –0.05 ■ Basic Part Number 0.50+0.10 –0.05 • 2SD1328 × 2 0.4±0.2 ■ Features 2.8+0.2 –0.3 5 1.50+0.25 –0.05 4 5˚ For amplification of low-frequency output 0.16+0.10 –0.06 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 25 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 12 V Collector current IC 0.5 A Peak collector current ICP 1 A Total power dissipation PT 300 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ : SC-74 0 to 0.1 1.1+0.2 –0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.1+0.3 –0.1 10˚ 4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package Marking Symbol: 5X Internal Connection 4 5 Tr2 ■ Electrical Characteristics Ta = 25°C ± 3°C 3 2 Symbol VCBO IC = 10 µA, IE = 0 25 Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 20 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 12 V Collector-base cutoff current (Emitter open) ICBO VCB = 25 V, IE = 0 Forward current transfer ratio *1 hFE1 VCE = 2 V, IC = 0.5 A 200 hFE2 VCE = 2 V, IC = 1 A 60 Base-emitter saturation voltage *1 Transition frequency IC = 0.5 A, IB = 20 mA VBE(sat) IC = 0.5 A, IB = 50 mA fT Collector output capacitance (Common base, input open circuited) Cob ON resistance *2 Ron Typ 1 Parameter VCE(sat) Min Tr1 Collector-base voltage (Emitter open) Collector-emitter saturation voltage *1 Conditions 6 Max Unit V 0.13 100 nA 800 0.40 V 1.2 V VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 10 pF 1.0 Ω Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement 1 kΩ *2: Ron test circuit IB = 1 mA f = 1 kHz V = 0.3 V VB VV Ron = Publication date: February 2004 VB × 1 000 (Ω) VA − VB VA Note) The part number in the parenthesis shows conventional part number. SJJ00078BED 1 XN04504 IC VCE 1.2 Ta = 25°C Total power dissipation PT (mW) IB = 4.0 mA 3.5 mA 1.0 Collector current IC (A) 400 300 200 100 3.0 mA 0.8 2.5 mA 2.0 mA 0.6 1.5 mA 0.4 1.0 mA 0.5 mA 0.2 0 0 40 80 120 0 160 Ambient temperature Ta (°C) 0 1 2 5 6 IC / IB = 25 10 1 Ta = 75°C 10−1 25°C −25°C 10−2 10−2 10−1 1 fT I E 400 VCE = 2 V VCB = 10 V Ta = 25°C 350 25°C 1 Ta = −25°C 75°C 10−1 Transition frequency fT (MHz) 10 800 Ta = 75°C 600 400 10 Collector current IC (A) hFE IC 1 000 25°C −25°C 200 300 250 200 150 100 50 10−2 10−2 10−1 1 10 0 10−2 10−1 Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 24 f = 1 MHz IE = 0 Ta = 25°C 20 16 12 8 4 0 1 10 1 Collector current IC (A) Collector current IC (A) 102 Collector-base voltage VCB (V) 2 4 1 200 IC / IB = 10 Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) 3 102 Collector-emitter voltage VCE (V) VBE(sat) IC 102 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) PT Ta 500 SJJ00078BED 10 0 −1 −10 Emitter current IE (mA) −102 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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