Transistors 2SC4809J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 ■ Features Unit : mm 0.80±0.05 For high-frequency amplification/oscillation/mixing 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50) 5˚ Parameter Symbol Rating Unit VCBO 15 V Collector-emitter voltage (Base open) VCEO 10 V Emitter-base voltage (Collector open) VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C (0.375) 1.60±0.05 0.10 max. ■ Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open) (0.80) 2 0.27±0.02 0.70+0.05 –0.03 1 5˚ 0.85+0.05 –0.03 3 • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob and reverse transfer capacitance (Common emitter) Crb • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1: Base 2: Emitter 3: Collector EIAJ: SC-89 SSMini3-F1 Package Marking Symbol: 1S ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 10 Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 3 Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 hFE VCE = 4 V, IC = 5 mA Forward current transfer ratio hFE ratio * ∆hFE Conditions hFE2: VCE = 4 V, IC = 100 µA Min Typ Max Unit V V 1 µA 75 400 0.75 1.6 0.5 V 2.7 GHz hFE1: VCE = 4 V, IC = 5 mA Collector-emitter saturation voltage Transition frequency VCE(sat) fT IC = 20 mA, IB = 4 mA VCB = 4 V, IE = −5 mA, f = 200 MHz 1.4 1.9 Collector output capacitance (Common base, input open circuited) Cob VCB = 4 V, IE = 0, f = 1 MHz 1.4 pF Reverse transfer capacitance (Common emitter) Crb VCB = 4 V, IE = 0, f = 1 MHz 0.45 pF 11 ps Collector-base parameter rbb' • CC VCB = 4 V, IE = −5 mA, f = 31.9 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. * :∆hFE = hFE2 / hFE1 Publication date: August 2003 SJC00303AED 1 2SC4809J PC Ta IC VCE 50 80 60 40 400 µA 100 40 300 µA 35 30 200 µA 25 20 100 µA 15 10 20 VCE = 4 V IB = 500 µA Collector current IC (mA) 100 IC VBE 120 Ta = 25°C 45 120 Collector current IC (mA) Collector power dissipation PC (mW) 140 80 Ta = 85°C −25°C 60 25°C 40 20 5 0 20 40 60 80 100 0 0 120 140 0 Ambient temperature Ta (°C) 10 100 Collector current IC (mA) 2 10 12 0 0.2 0.4 1 000 120 25°C 100 −25°C 80 60 40 20 0 0.1 1 10 Collector current IC (mA) SJC00303AED 0.6 0.8 1.0 1.2 1.4 Base-Emitter voltage VBE (V) Cob VCB VCE = 4 V Ta = 85°C Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) −25°C 25°C 1 8 hFE IC 0.1 0.01 0.1 6 140 IC / IB = 5 Ta = 85°C 4 Collector-emitter voltage VCE (V) VCE(sat) IC 1 2 100 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 10 1 f = 1 MHz Ta = 25°C 0 2 4 6 8 10 12 14 Collector-base voltage VCB (V) 16 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL