Transistors MSG33002 SiGe HBT type For low-noise RF amplifier Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 ■ Features 5˚ 0.80±0.05 1.20±0.05 • Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature package 0.8 mm × 1.2 mm (height 0.52 mm) 0.15 min. 3 2 0.15 min. 1 0.23+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 0.52±0.03 5˚ Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 9 V Collector-emitter voltage (Base open) VCEO 6 V Emitter-base voltage (Collector open) VEBO 1 V Collector current IC 60 mA Collector power dissipation* PC 100 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 max. Parameter 0 to 0.01 ■ Absolute Maximum Ratings Ta = 25°C 1: Base 2: Emitter 3: Collector SSSMini3-F1 Package Marking Symbol: 5T Note) *: Copper plate at the collector is 5.0 cm2 on substrate at 10 mm × 12 mm × 0.8 mm. ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Collector-base cutoff current (Emitter open) ICBO Collector-emitter cutoff current (Base open) ICEO Emitter-base cutoff current (Collector open) IEBO VEB = 1 V, IC = 0 Forward current transfer ratio hFE VCE = 3 V, IC = 6 mA Transition frequency fT VCE = 3 V, IC = 20 mA, f = 2 GHz Forward transfer gain S21e2 VCE = 3 V, IC = 20 mA, f = 2 GHz Min Typ Max Unit VCB = 9 V, IE = 0 1 µA VCE = 6 V, IB = 0 1 µA 1 µA 220 100 7.5 19 GHz 10.5 dB Noise figure NF VCE = 3 V, IC = 6 mA, f = 2 GHz 1.4 2.0 dB Collector output capacitance (Common base, input open circuited) Cob VCB = 3 V, IE = 0, f = 1 MHz 0.4 0.7 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: October 2004 SJC00293BED 1 MSG33002 PC Ta IC VCE hFE IC 120 80 40 70 µA 60 µA 8 50 µA 40 µA 30 µA 4 20 µA 0 40 80 0 120 Ambient temperature Ta (°C) 0 80 40 0 0.01 6 5 10 0.1 1 10 GP I C 0.8 15 VCE = 3 V f = 2 GHz f = 1 MHz 0.7 10 0.6 0.5 0.4 0.3 5 0 –5 0.2 0.1 100 0 2 4 –10 0.1 6 1 10 Collector current IC (mA) Collector-base voltage VCB (V) Collector current IC (mA) S21e2 IC NF IC S11 , S22 VCE = 3 V f = 2 GHz VCE = 3 V IC = 10 mA 1.0 VCE = 3 V f = 2 GHz 6 100 0.5 2.0 Noise figure NF (dB) 2 12 100 Collector current IC (mA) Power gain GP (dB) 10 Collector output capacitance C (pF) (Common base, input open circuited) ob 15 1 4 Cob VCB VCE = 3 V f = 2 GHz 20 0 2 Collector-emitter voltage VCE (V) fT I C 25 Transition frequency fT (GHz) 120 10 µA 0 Forward transfer gain S21e (dB) Forward current transfer ratio hFE Collector current IC (mA) Collector power dissipation PC (mW) VCE = 3 V 160 IB = 80 µA 12 8 4 4 S11 2 S22 −2.0 − 0.5 0 1 10 Collector current IC (mA) 2 100 ∞ 1 0 0 0.1 1 10 Collector current IC (mA) SJC00293BED 100 −1.0 MSG33002 S21e2, S12e2 f Forward transfer coefficient S21e2, Reverse transfer coefficient S12e2 (dB) 40 20 S21e2 0 –20 –40 S12e2 0 1 2 3 Frequency f (GHz) SJC00293BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. 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