Transistors 2SC5838 Silicon NPN epitaxial planar type For UHF band low-noise amplification • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm) 3 2 1 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open) VCEO 10 V Emitter-base voltage (Collector open) VEBO 2 V Collector current IC 80 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.25±0.05 1 0.50±0.05 ■ Absolute Maximum Ratings Ta = 25°C 0.15±0.05 0.05±0.03 0.35±0.01 ■ Features 0.60±0.05 Unit: mm 3 0.65±0.01 2 0.05±0.03 1: Base 2: Emitter 3: Collector ML3-N2 Package Marking symbol: 1F ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 15 V Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0 10 V Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 1 µA Emitter-base cutoff current (Collector open) IEBO VEB = 2 V, IC = 0 1 µA hFE VCE = 8 V, IC = 20 mA 110 VCE = 8 V, IC = 20 mA, f = 800 MHz 7.5 Forward current transfer ratio Forward transfer gain S21e2 Conditions Min Typ Max 250 10.0 Unit dB NF VCE = 8 V, IC = 20 mA, f = 800 MHz 1.7 dB Maximum unilateral power gain GUM VCE = 8 V, IC = 20 mA, f = 800 MHz 11.5 dB Collector output capacitance (Common base, input open circuited) Cob VCB = 10 V, IE = 0, f = 1 MHz 0.9 Noise figure Transition frequency fT VCE = 8 V, IC = 20 mA, f = 800 MHz 5.0 6.0 1.2 pF GHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: December 2002 SJC00288AED 1 2SC5838 IC VCE 90 500 µA 80 60 40 70 400 µA 60 300 µA 50 40 200 µA 30 20 100 µA 20 10 0 0 20 40 60 80 100 120 140 0 2 4 VCE = 8 V Ta = 85°C 160 25°C 120 −25°C 80 40 0 10 10 10 12 100 Collector current IC (A) 1 000 f = 1 MHz Ta = 25°C 1 0.1 1 8 Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob hFE IC 200 6 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) Forward current transfer ratio hFE IB = 600 µA 100 0 2 VCE(sat) IC 80 Collector current IC (mA) Collector power dissipation PC (mW) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) PC Ta 120 0 5 10 15 20 Collector-base voltage VCB (V) SJC00288AED 25 1 IC / IB = 10 Ta = 85°C 0.1 −25°C 25°C 0.01 1 10 100 Collector current IC (mA) 1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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