Transistors 2SA1790J For high-frequency amplification Complementary to 2SC4626J Unit: mm 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 Silicon PNP epitaxial planar type 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50) 5˚ Parameter Symbol Rating Unit VCBO −30 V Collector-emitter voltage (Base open) VCEO −20 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −30 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.10 max. ■ Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open) (0.375) 2 (0.80) 1 0.27±0.02 0.70+0.05 –0.03 • Optimum for RF amplification of FM/AM radios • High transition frequency fT • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1.60±0.05 ■ Features 5˚ 0.85+0.05 –0.03 3 1: Base 2: Emitter 3: Collector EIAJ: SC-89 SSMini3-F1 Package Marking Symbol: E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Base-emitter voltage VBE VCE = −10 V, IC = −1 mA Collector-base cutoff current (Emitter open) ICBO VCB = −10 V, IE = 0 − 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −20 V, IB = 0 −100 µA Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 −10 µA hFE VCE = −10 V, IC = −1 mA 220 VCE(sat) IC = −10 mA, IB = −1 mA Forward current transfer ratio * Collector-emitter saturation voltage − 0.7 70 V − 0.1 V Transition frequency fT VCB = −10 V, IE = 1 mA, f = 200 MHz Noise figure NF VCB = −10 V, IE = 1 mA, f = 5 MHz Reverse transfer impedance Zrb VCB = −10 V, IE = 1 mA, f = 2 MHz 22 50 Ω Reverse transfer capacitance (Common emitter) Cre VCB = −10 V, IE = 1 mA, f = 10.7 MHz 1.2 2.0 pF 150 300 2.8 MHz 4.0 dB Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank B C hFE 70 to 140 110 to 220 Publication date: July 2003 SJC00291AED 1 2SA1790J IC VCE IB = −250 µA −20 80 40 0 −200 µA −15 40 80 −150 µA −100 µA −10 −50 µA −5 120 0 Ambient temperature Ta (°C) −2 −4 Ta = 75°C 25°C 80 −25°C 60 40 20 0 − 0.1 −1 −10 Collector current IC (mA) 2 −8 −10 −12 Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob Forward current transfer ratio hFE VCE = −10 V −6 Collector-emitter voltage VCE (V) hFE IC 100 −100 −10 IC / IB = 10 −1 Ta = 75°C 25°C −25°C − 0.1 0 0 VCE(sat) IC Ta = 25°C 120 Collector current IC (mA) Collector power dissipation PC (mW) −25 Collector-emitter saturation voltage VCE(sat) (V) PC Ta 100 f = 1 MHz Ta = 25°C 10 1 0 −5 −10 −15 Collector-base voltage VCB (V) SJC00291AED −20 − 0.01 −1 −10 Collector current IC (mA) −100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL