Transistors 2SC5556 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 0.40+0.10 –0.05 ■ Features 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • Low noise figure NF • High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing (0.95) (0.95) (0.65) 2 1 1.9±0.1 2.90+0.20 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Unit Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open) VCEO 10 V Emitter-base voltage (Collector open) VEBO 2 V Collector current IC 80 mA Collector power dissipation * PC 300 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Copper plate at the collector is more than 1 cm2 in area, 1.0 10˚ 1.1+0.2 –0.1 Rating 1.1+0.3 –0.1 Symbol 0 to 0.1 Parameter Note) *: 0.16+0.10 –0.06 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: 3K mm in thickness ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 15 Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0 10 Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = 2 V, IC = 0 Forward current transfer ratio hFE VCE = 8 V, IC = 20 mA fT VCE = 8 V, IC = 20 mA, f = 800 MHz Transition frequency Collector output capacitance (Common base, input open circuited) Foward transfer gain Maximum unilateral power gain Noise figure Cob Conditions Min 5 VCE = 8 V, IC = 20 mA, f = 800 MHz GUM NF Unit V 1 µA 1 µA 250 6 0.9 7.5 Max V 110 VCB = 10 V, IE = 0, f = 1 MHz S21e2 Typ GHz 1.2 pF 10.0 dB VCE = 8 V, IC = 20 mA, f = 800 MHz 11.5 dB VCE = 8 V, IC = 20 mA, f = 800 MHz 1.7 dB Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: December 2002 SJC00278BED 1 2SC5556 IC VCE 90 Collector current IC (mA) Collector power dissipation PC (mW) 250 200 150 100 50 500 µA 70 400 µA 60 300 µA 50 40 200 µA 30 20 100 µA 10 0 0 40 80 120 160 0 2 4 VCE = 8 V Forward current transfer ratio hFE Ta = 85°C 160 140 25°C 120 100 −25°C 80 60 40 20 0 1 10 8 10 12 Cob VCB 100 Collector current IC (mA) 1 000 Collector output capacitance C (pF) (Common base, input open circuited) ob hFE IC 200 180 6 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 2 IB = 600 µA 80 300 0 VCE(sat) IC Ta = 25°C 10 f = 1 MHz Ta = 25°C 1 0.1 0 5 10 15 20 Collector-base voltage VCB (V) SJC00278BED 25 Collector-emitter saturation voltage VCE(sat) (V) PC Ta 350 1 IC / IB = 10 Ta = 85°C 0.1 25°C −25°C 0.01 1 10 Collector current IC (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL