PANASONIC 2SC5295J

Transistors
2SC5295J
Silicon NPN epitaxial planar type
1.60+0.05
–0.03
1.00±0.05
■ Features
Unit: mm
0.80±0.05
For 2 GHz band low-noise amplification
0.12+0.03
–0.01
0 to 0.02
(0.50)(0.50)
5˚
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
15
V
Collector-emitter voltage (Base open)
VCEO
10
V
Emitter-base voltage (Collector open)
VEBO
2
V
Collector current
IC
65
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
(0.375)
0.10 max.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
1.60±0.05
2
(0.80)
1
0.27±0.02
0.70+0.05
–0.03
• High transition frequency fT
• Low collector output capacitance (Common base, input open circuited) Cob
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
5˚
0.85+0.05
–0.03
3
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Marking Symbol: 3S
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base cutoff current (Emitter open)
ICBO
Emitter-base cutoff current (Collector open)
IEBO
hFE
VCE = 8 V, IC = 20 mA
50
fT
VCE = 8 V, IC = 15 mA, f = 1.5 GHz
7.0
Forward current transfer ratio
*
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Foward transfer gain
Maximum unilateral power gain
Noise figure
Conditions
Min
Max
Unit
VCB = 10 V, IE = 0
1
µA
VEB = 1 V, IC = 0
1
µA
VCB = 10 V, IE = 0, f = 1 MHz
Cob
Typ
170
8.5
0.6

GHz
1.0
pF
S21e2
VCE = 8 V, IC = 15 mA, f = 1.5 GHz
9
dB
GUM
VCE = 8 V, IC = 15 mA, f = 1.5 GHz
10
dB
NF
VCE = 8 V, IC = 7 mA, f = 1.5 GHz
2.2
7
3.0
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
50 to 120
100 to 170
Publication date: December 2002
SJC00283BED
1
2SC5295J
PC  Ta
IC  VCE
30
Ta = 25°C
60
40
200 µA
20
150 µA
15
100 µA
10
50 µA
5
20
20
40
60
80
0
100 120 140
0
VCE(sat)  IC
6
8
IC / IB = 10
10
Ta = 85°C
25°C
−25°C
Ta = 85°C
120
100
25°C
80
−25°C
60
40
0
1
10
Collector current IC (mA)
0
0.2
0.4
100
1
10
Collector current IC (mA)
SJC00283BED
0.6
0.8
1.0
1.2
Base-emitter voltage VBE (V)
Cob  VCB
20
0.01
0.1
40
0
12
VCE = 8 V
140
−25°C
25°C
hFE  IC
160
Forward current transfer ratio hFE
Collector-emitter saturation voltage VCE(sat) (V)
4
60
Collector-emitter voltage VCE (V)
Ambient temperature Ta (°C)
2
2
Ta = 85°C
80
20
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
0
Collector current IC (mA)
80
0.1
VCE = 8 V
100
25
100
0
IC  VBE
120
IB = 250 µA
120
Collector current IC (mA)
Collector power dissipation PC (mW)
140
100
10
f = 1 MHz
Ta = 25°C
1
0.1
0
4
8
12
16
Collector-base voltage VCB (V)
1.4
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL