Power Transistors 2SD1719 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 3.0+0.4 –0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 100 V Collector-emitter voltage (Base open) VCEO 60 V Emitter-base voltage (Collector open) VEBO 15 V Collector current IC 6 A Peak collector current ICP 12 A Base current IB 3 A Collector power dissipation PC 40 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Ta = 25°C (1.5) 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0) 1.3 3 (7.6) 2 0 to 0.4 4.4±0.5 1.5+0 –0.4 1 14.4±0.5 1.0±0.1 10.0±0.3 1.5±0.1 6.0±0.2 4.4±0.5 • High forward current transfer ratio hFE which has satisfactory linearity • High emitter-base voltage (Collector open) VEBO • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 3.4±0.3 2.0±0.5 ■ Features Unit: mm 8.5±0.2 (6.5) 1: Base 2: Collector 3: Emitter N-G1 Package Note) Self-supported type package is also prepared. 1.3 ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = 25 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO VCB = 100 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = 15 V, IC = 0 Forward current transfer ratio * hFE VCE = 4 V, IC = 1 A VCE(sat) IC = 5 A, IB = 0.1 A Collector-emitter saturation voltage Conditions Min Typ Max Unit 100 µA 100 µA 2 000 60 V 300 0.5 V fT VCE = 12 V, IC = 0.5 A, f = 10 MHz 30 MHz Turn-on time ton IC = 5 A 0.3 µs Strage time tstg IB1 = 0.1 A, IB2 = − 0.1 A 1.5 µs tf VCC = 50 V 0.6 µs Transition frequency Fall time Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q P hFE 300 to 1200 800 to 2 000 Publication date: April 2003 SJD00212AED 1 2SD1719 PC Ta IC VCE 5 (1) 40 20 IB=10mA 9mA 8mA 4 7mA 6mA 3 5mA 4mA 2 3mA 2mA 1 0 0 40 80 120 160 0 2 4 VBE(sat) IC Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) TC=–25˚C 25˚C 0.1 0.01 0.01 1 1 TC=100˚C 25˚C –25˚C 0.1 0.01 0.1 1 fT I C VCE=12V f=10MHz TC=25˚C TC=100˚C 10 25˚C –25˚C 102 10 0.01 10 1000 104 3 0.1 1 100 10 1 0.1 0.01 10 0.1 Collector current IC (A) Cob VCB Turn-on time ton , Storage time tstg , Fall time tf (µs) IE=0 f=1MHz TC=25˚C 103 102 10 10 Collector-base voltage VCB (V) 100 100 tstg 1 tf ton 0.1 0.01 100 2 4 6 Collector current IC (A) SJD00212AED 8 Non repetitive pulse TC=25˚C ICP 10 IC t=1ms t=10ms 1 t=300ms 0.1 0.01 0 10 Safe operation area Pulsed tw=1ms Duty cycle=1% IC/IB=50 (IB1=–IB2) VCC=50V TC=25˚C 10 1 Collector current IC (A) ton, tstg, tf IC 104 10 Collector current IC (A) VCE=4V Collector current IC (A) 1 12 IC/IB=50 hFE IC IC/IB=50 100˚C Collector output capacitance C (pF) (Common base, input open circuited) ob 10 105 10 1 0.1 8 10 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 1 6 Transition frequency fT (MHz) 0 1mA (3) (2) 2 Collector-emitter saturation voltage VCE(sat) (V) TC=25˚C Collector current IC (A) 60 VCE(sat) IC 6 (1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) 80 1 10 100 1000 Collector-emitter voltage VCE (V) 2SD1719 Rth t Thermal resistance Rth (°C/W) 103 (1)Without heat sink (2)With a 50×50×2mm Al heat sink (1) 102 (2) 10 1 10−1 10−2 10−4 10−3 10−2 10−1 1 10 102 103 104 Time t (s) SJD00212AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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