Power Transistors 2SB0939 (2SB939), 2SB0939A (2SB939A) Silicon PNP epitaxial planar type Darlington Unit: mm Collector-base voltage (Emitter open) Unit VCBO −60 V 2 −80 2SB0939A Collector-emitter voltage 2SB0939 (Base open) 2SB0939A VCEO Emitter-base voltage (Collector open) VEBO −60 14.4±0.5 3.0+0.4 –0.2 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0) 1.3 3 (7.6) Rating 0 to 0.4 4.4±0.5 1.5+0 –0.4 1 Symbol 2SB0939 1.0±0.1 (1.5) ■ Absolute Maximum Ratings TC = 25°C Parameter 6.0±0.2 4.4±0.5 • High forward current transfer ratio hFE • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 3.4±0.3 2.0±0.5 ■ Features 8.5±0.2 10.0±0.3 1.5±0.1 For midium-speed power switching Complementary to 2SD1262, 2SD1262A (6.5) V 1 : Base 2 : Collector 3 : Emitter N-G1 Package −80 −7 V Collector current IC −8 A Note) Self-supported type package is also prepared. Peak collector current ICP −12 A Internal Connection Collector power dissipation PC 45 W Ta = 25°C 1.3 C B Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) 2SB0939 Collector-base cut-off 2SB0939 current (Emitter open) 2SB0939A Conditions IC = −30 mA, IB = 0 VCEO Min Typ Max −60 Unit V −80 2SB0939A ICBO VCB = −60 V,IE = 0 −100 VCB = −80 V,IE = 0 −100 Emitter-base cutoff current (Collector open) IEBO VEB = −7 V,IC = 0 Forward current transfer ratio hFE1 * VCE = −3 V, IC = −4 A 2 000 500 hFE2 VCE = −3 V, IC = −8 A Base-emitter saturation voltage VBE(sat) IC = −4 A,IB = −8 mA Collector-emitter saturation voltage VCE(sat) IC = −4 A, IB = −8 mA µA −2 mA 10 000 −2 V −1.5 V fT VCE = −10 V, IC = −0.5 A, f = 1 MHz 20 MHz Turn-on time ton IC = −4 A, 0.5 µs Strage time tstg IB1 = −8 mA, IB2 = 8 mA 2 µs Fall time tf VCC = −50 V 1 µs Transition frequency Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q P 2 000 to 5 000 4 000 to 10 000 Note) The part number in the parenthesis shows conventional part number. Publication date: March 2003 SJD00020BED 1 2SB0939, 2SB0939A PC Ta IC VCE TC=25˚C –0.8mA –0.6mA –0.4mA −2 10 –0.2mA (2) (3) 0 40 80 120 0 160 −1 0 Ambient temperature Ta (°C) (3) (2) (1) −1 −10 −100 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25 C −1 TC=–25˚C 25˚C 100˚C −1 − 0.01 − 0.1 −1 103 −1 −10 Collector current IC (A) 2 (1)IC/IB=250 (2)IC/IB=500 (3)IC/IB=1000 TC=25˚C −10 (1) (2) (3) −1 − 0.1 − 0.1 −10 −1 Safe operation area −100 104 Non repetitive pulse TC=25˚C IE=0 f=1MHz TC=25˚C 103 102 10 1 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) SJD00020BED −10 Collector current IC (A) Collector current IC (A) –25˚C −10 −100 Collector current IC (A) Collector output capacitance C (pF) (Common base, input open circuited) ob Forward current transfer ratio hFE 25˚C −1 Collector current IC (A) Cob VCB VCE=–3V 104 102 − 0.1 − 0.1 − 0.1 VBE(sat) IC −10 hFE IC TC=100˚C −5 IC/IB=500 Collector current IC (A) 105 −4 –25˚C VBE(sat) IC −10 − 0.1 − 0.1 −3 −1 Collector-emitter voltage VCE (V) VCE(sat) IC −100 −2 25˚C TC=100˚C Base-emitter saturation voltage VBE(sat) (V) 0 −10 ICP −10 t=1ms IC t=10ms −1 t=300ms − 0.1 − 0.01 −1 −10 2SB0939A 20 −4 IC/IB=500 2SB0939 30 IB=–2.0mA –1.8mA –1.6mA –1.4mA –1.2mA –1.0mA −6 Collector current IC (A) 40 Collector-emitter saturation voltage VCE(sat) (V) (1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink (PC=1.3W) (1) Collector power dissipation PC (W) VCE(sat) IC −100 −8 50 −100 −1 000 Collector-emitter voltage VCE (V) 2SB0939, 2SB0939A Rth t Thermal resistance Rth (°C/W) 103 (1)Without heat sink (2)With a 50×50×2mm Al heat sink (1) 102 (2) 10 1 10−1 10−2 10−4 10−3 10−2 10−1 1 10 102 103 104 Time t (s) SJD00020BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL