Power Transistors 2SB1070, 2SB1070A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm Symbol Rating Unit VCBO −40 V 2SB1070 2 −50 2SB1070A Collector-emitter voltage 2SB1070 (Base open) 2SB1070A VCEO Emitter-base voltage (Collector open) −20 V (6.5) −40 VEBO −5 V Collector current IC −4 A Peak collector current ICP −8 A Collector power dissipation PC 25 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Ta = 25°C 14.4±0.5 3.0+0.4 –0.2 4.4±0.5 1.5+0 –0.4 4.4±0.5 1 0 to 0.4 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0) 1.3 3 (1.5) Collector-base voltage (Emitter open) 1.0±0.1 (7.6) ■ Absolute Maximum Ratings TC = 25°C Parameter 6.0±0.2 2.0±0.5 • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 3.4±0.3 10.0±0.3 1.5±0.1 ■ Features 8.5±0.2 1: Base 2: Collector 3: Emitter N-G1 Package Note) Self-supported type package is also prepared. 1.3 ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) 2SB1070 Collector-base cutoff current (Emitter open) 2SB1070 Conditions IC = −10 mA, IB = 0 VCEO Min Typ Max −20 Unit V −40 2SB1070A ICBO 2SB1070A VCB = −40 V, IE = 0 −50 VCB = −50 V, IE = 0 −50 Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 Forward current transfer ratio hFE1 VCE = −2 V, IC = − 0.1 A 45 VCE = −2 V, IC = −1 A 90 hFE2 * Base-emitter saturation voltage VBE(sat) IC = −2 A, IB = − 0.1 A Collector-emitter saturation voltage VCE(sat) IC = −2 A, IB = − 0.1 A −50 µA µA 260 −1.5 − 0.5 V V fT VCE = −5 V, IC = − 0.5 A, f = 10 MHz 150 MHz Turn-on time ton IC = −2 A 0.3 µs Storage time tstg IB1 = − 0.2 A, IB2 = 0.2 A 0.4 µs VCC = −20 V 0.1 µs Transition frequency Fall time tf Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q P hFE2 90 to 180 130 to 260 Publication date: February 2003 SJD00040AED 1 2SB1070, 2SB1070A 30 (1) 20 10 VCE(sat) IC −100 IB=–80mA −5 Collector current IC (A) Collector power dissipation PC (W) IC VCE −6 (1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink (PC=1.3W) TC=25˚C –50mA –45mA –40mA −4 –35mA –30mA −3 –25mA –20mA −2 –15mA –10mA −1 (2) –5mA (3) 0 0 25 50 75 100 125 0 150 Ambient temperature Ta (°C) −2 0 −1 000 −10 − 0.1 − 0.01 − 0.01 − 0.1 −1 fT I C 1 000 VCE=–2V VCE=–2V f=10MHz TC=25˚C 25˚C −100 TC=–25˚C 25˚C 100˚C −1 − 0.01 − 0.01 − 0.1 −1 −10 –25˚C −10 −1 − 0.1 − 0.01 Collector current IC (A) − 0.1 −1 −10 Collector current IC (A) ton , tstg , tf IC Collector current IC (A) Pulsed tw=1ms Duty cycle=1% IC/IB=10 (–IB1=IB2) VCC=–20V TC=25˚C 1 ton tstg tf Non repetitive pulse TC=25˚C −10 ICP t=1ms IC t=300ms −1 t=10ms 0 −2 −4 −6 Collector current IC (A) −8 −10 2SB1070A − 0.01 −1 2SB1070 − 0.1 0.01 −100 −1 000 Collector-emitter voltage VCE (V) SJD00040AED 100 10 1 0.1 − 0.01 − 0.1 −1 Collector current IC (mA) Safe operation area −100 10 0.1 Transition frequency fT (MHz) −10 −10 Collector current IC (A) TC=100˚C Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) −8 TC=100˚C 25˚C –25˚C −1 hFE IC IC/IB=20 − 0.1 Turn-on time ton , Storage time tstg , Fall time tf (µs) −6 IC/IB=20 −10 Collector-emitter voltage VCE (V) VBE(sat) IC −100 2 −4 Collector-emitter saturation voltage VCE(sat) (V) PC Ta 40 −10 2SB1070, 2SB1070A Rth t Thermal resistance Rth (°C/W) 102 (1)Without heat sink (2)With a 50×50×2mm Al heat sink (1) (2) 10 1 10−1 10−2 10−3 10−2 10−1 1 10 102 103 104 Time t (s) SJD00040AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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