TIPL790, TIPL790A

TIPL790, TIPL790A
NPN SILICON POWER DARLINGTONS
●
Rugged Epitaxial Planar Construction
●
10 A Continuous Collector Current
●
Operating Characteristics Fully Guaranteed
at 100°C
●
txo typically 320 ns, IC = 10 A
This series is obsolete and
not recommended for new designs.
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
TIPL790
Collector-base voltage (IE = 0)
Emitter-base voltage
TIPL790A
V CBO
E
T
E
L
O
S
B
O
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
SYMBOL
TIPL790
TIPL790A
TIPL790
TIPL790A
VCES
V CEO
VALUE
150
200
150
200
120
150
UNIT
V
V
V
VEBO
8
V
IC
10
A
Peak collector current (see Note 1)
ICM
15
A
Continuous device dissipation at (or below) 25°C case temperature
Ptot
70
W
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
Continuous collector current
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIPL790, TIPL790A
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
VCEO(sus)
VCBO
ICES
ICEV
ICEO
IEBO
hFE
Collector-emitter
sustaining voltage
Collector-base
breakdown voltage
TEST CONDITIONS
IC = 100 mA
IC =
VBE(sat)
VEC
ft
Cob
NOTES: 2.
3.
4.
5.
1 mA
(see Note 2)
(see Note 3)
120
TIPL790A
150
TIPL790
150
TIPL790A
200
MAX
V
VCE = 150 V
VBE = 0
TIPL790
0.05
VBE = 0
TIPL790A
0.05
cut-off current
VCE = 150 V
VBE = 0
TC = 100°C
TIPL790
VCE = 200 V
VBE = 0
TC = 100°C
TIPL790A
1
TIPL790
50
TIPL790A
50
Collector cut-off
VCE = 150 V
current
VCE = 200 V
1.5 < VEB <8 V
1
Collector cut-off
VCE = 120 V
IB = 0
TIPL790
50
current
VCE = 150 V
IB = 0
TIPL790A
50
VEB =
5V
IC = 0
VCE =
5V
IC = 0.5 A
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Parallel diode
forward voltage
Current gain
bandwidth product
Output capacitance
20 mA
IC =
4
(see Notes 3 and 4)
60
mA
µA
µA
mA
500
4A
1.2
E
T
E
L
O
S
B
O
IB =
30 mA
IC =
IB =
50 mA
IC = 10 A
IB =
50 mA
IC = 10 A
IB =
20 mA
IC =
4A
IB =
30 mA
IC =
7A
IB =
50 mA
IC = 10 A
IB =
50 mA
IC = 10 A
IE =
10 A
IB = 0
VCE =
10 V
IC = 0.5 A
f=
VCB =
20 V
IE = 0
f = 0.1 MHz
7A
UNIT
V
VCE = 200 V
(see Notes 3 and 4)
1.5
2.0
TC = 100°C
2.0
1.8
(see Notes 3 and 4)
1.9
2.2
TC = 100°C
1 MHz
(see Note 5)
V
V
2.1
3
V
10
MHz
90
pF
Inductive loop switching measurement.
These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1.
thermal characteristics
PARAMETER
RθJC
TYP
Collector-emitter
IB =
V CE(sat)
L = 25 mH
MIN
TIPL790
MIN
TYP
Junction to case thermal resistance
MAX
UNIT
1.79
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
†
TEST CONDITIONS
†
MIN
MAX
UNIT
tsi
Current storage time
450
700
ns
trv
Voltage rise time
160
750
ns
tfi
Current fall time
250
400
ns
tti
Current tail time
280
450
ns
txo
Cross over time
320
500
ns
IC = 10 A
IB(on) = 50 mA
IB(off) = -2.5 A
VBE(off) = -5 V
(see Figures 1 and 2)
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIPL790, TIPL790A
NPN SILICON POWER DARLINGTONS
PARAMETER MEASUREMENT INFORMATION
33 Ω
+5V
D45H11
BY205-400
33 Ω
BY205-400
RB
(on)
1 pF
180 µH
V Gen
1 kΩ
68 Ω
0.02 µF
vcc
2N2222
BY205-400
Vclamp = 400 V
TUT
1 kΩ
+5V
270 Ω
E
T
E
L
O
S
B
O
BY205-400
5X BY205-400
1 kΩ
2N2904
Adjust pw to obtain IC
D44H11
47 Ω
For IC < 6 A
VCC = 50 V
For IC ≥ 6 A
VCC = 100 V
V
100 Ω
BE(off)
Figure 1. Inductive-Load Switching Test Circuit
I B(on)
A - B = tsv
B - C = trv
D - E = tfi
E - F = tti
A (90%)
IB
Base Current
C
B - E = txo
V
CE
B
90%
10%
Collector Voltage
D (90%)
E (10%)
I
C(on)
Collector Current
F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF.
B. Resistors must be noninductive types.
Figure 2. Inductive-Load Switching Waveforms
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIPL790, TIPL790A
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TC = 125°C
TC = 25°C
TC = -65°C
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCE785AA
10000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
VCE = 5 V
1000
100
1·0
TCE785AB
6
IC =
IC =
IC =
IC =
5
4
3
2
E
T
E
L
O
S
B
O
1
0
10
1
10
IC - Collector Current - A
Figure 4.
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
10 A
7A
4A
1A
1·6
1·4
1·2
1·0
1·0
10
IB - Base Current - mA
Figure 5.
100
1·0
TIPL790A
VCE = 200 V
0·1
TIPL790
VCE = 150 V
0·01
0·001
-60
-30
0
30
60
90
120
TC - Case Temperature - °C
Figure 6.
4
TCE785AD
10
ICES - Collector Cut-off Current - µA
VBE(sat) - Base-Emitter Saturation Voltage - V
1·8
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
TCE785AC
IC =
IC =
IC =
IC =
100
IB - Base Current - mA
Figure 3.
2·0
10 A
7A
4A
1A
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIPL790, TIPL790A
NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAE785AA
tp = 1 ms,
d = 1%
tp = 2 ms,
d = 5%
tp = 10 ms,
d = 5%
DC Operation
10
1·0
0.1
E
T
E
L
O
S
B
O
TIPL790
TIPL790A
0·01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 7.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5
TIPL790, TIPL790A
NPN SILICON POWER DARLINGTONS
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
E
T
E
L
O
S
B
O
6,1
3,5
1,70
1,07
0,97
0,61
1
2
14,1
12,7
3
2,74
2,34
0,64
0,41
2,90
2,40
5,28
4,88
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
6
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.