TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS ● Rugged Epitaxial Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● txo typically 320 ns, IC = 10 A This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIPL790 Collector-base voltage (IE = 0) Emitter-base voltage TIPL790A V CBO E T E L O S B O Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) SYMBOL TIPL790 TIPL790A TIPL790 TIPL790A VCES V CEO VALUE 150 200 150 200 120 150 UNIT V V V VEBO 8 V IC 10 A Peak collector current (see Note 1) ICM 15 A Continuous device dissipation at (or below) 25°C case temperature Ptot 70 W Tj -65 to +150 °C Tstg -65 to +150 °C Continuous collector current Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) VCBO ICES ICEV ICEO IEBO hFE Collector-emitter sustaining voltage Collector-base breakdown voltage TEST CONDITIONS IC = 100 mA IC = VBE(sat) VEC ft Cob NOTES: 2. 3. 4. 5. 1 mA (see Note 2) (see Note 3) 120 TIPL790A 150 TIPL790 150 TIPL790A 200 MAX V VCE = 150 V VBE = 0 TIPL790 0.05 VBE = 0 TIPL790A 0.05 cut-off current VCE = 150 V VBE = 0 TC = 100°C TIPL790 VCE = 200 V VBE = 0 TC = 100°C TIPL790A 1 TIPL790 50 TIPL790A 50 Collector cut-off VCE = 150 V current VCE = 200 V 1.5 < VEB <8 V 1 Collector cut-off VCE = 120 V IB = 0 TIPL790 50 current VCE = 150 V IB = 0 TIPL790A 50 VEB = 5V IC = 0 VCE = 5V IC = 0.5 A Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Parallel diode forward voltage Current gain bandwidth product Output capacitance 20 mA IC = 4 (see Notes 3 and 4) 60 mA µA µA mA 500 4A 1.2 E T E L O S B O IB = 30 mA IC = IB = 50 mA IC = 10 A IB = 50 mA IC = 10 A IB = 20 mA IC = 4A IB = 30 mA IC = 7A IB = 50 mA IC = 10 A IB = 50 mA IC = 10 A IE = 10 A IB = 0 VCE = 10 V IC = 0.5 A f= VCB = 20 V IE = 0 f = 0.1 MHz 7A UNIT V VCE = 200 V (see Notes 3 and 4) 1.5 2.0 TC = 100°C 2.0 1.8 (see Notes 3 and 4) 1.9 2.2 TC = 100°C 1 MHz (see Note 5) V V 2.1 3 V 10 MHz 90 pF Inductive loop switching measurement. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1. thermal characteristics PARAMETER RθJC TYP Collector-emitter IB = V CE(sat) L = 25 mH MIN TIPL790 MIN TYP Junction to case thermal resistance MAX UNIT 1.79 °C/W inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER † TEST CONDITIONS † MIN MAX UNIT tsi Current storage time 450 700 ns trv Voltage rise time 160 750 ns tfi Current fall time 250 400 ns tti Current tail time 280 450 ns txo Cross over time 320 500 ns IC = 10 A IB(on) = 50 mA IB(off) = -2.5 A VBE(off) = -5 V (see Figures 1 and 2) Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS PARAMETER MEASUREMENT INFORMATION 33 Ω +5V D45H11 BY205-400 33 Ω BY205-400 RB (on) 1 pF 180 µH V Gen 1 kΩ 68 Ω 0.02 µF vcc 2N2222 BY205-400 Vclamp = 400 V TUT 1 kΩ +5V 270 Ω E T E L O S B O BY205-400 5X BY205-400 1 kΩ 2N2904 Adjust pw to obtain IC D44H11 47 Ω For IC < 6 A VCC = 50 V For IC ≥ 6 A VCC = 100 V V 100 Ω BE(off) Figure 1. Inductive-Load Switching Test Circuit I B(on) A - B = tsv B - C = trv D - E = tfi E - F = tti A (90%) IB Base Current C B - E = txo V CE B 90% 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF. B. Resistors must be noninductive types. Figure 2. Inductive-Load Switching Waveforms AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TC = 125°C TC = 25°C TC = -65°C VCE(sat) - Collector-Emitter Saturation Voltage - V TCE785AA 10000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE = 5 V 1000 100 1·0 TCE785AB 6 IC = IC = IC = IC = 5 4 3 2 E T E L O S B O 1 0 10 1 10 IC - Collector Current - A Figure 4. BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT 10 A 7A 4A 1A 1·6 1·4 1·2 1·0 1·0 10 IB - Base Current - mA Figure 5. 100 1·0 TIPL790A VCE = 200 V 0·1 TIPL790 VCE = 150 V 0·01 0·001 -60 -30 0 30 60 90 120 TC - Case Temperature - °C Figure 6. 4 TCE785AD 10 ICES - Collector Cut-off Current - µA VBE(sat) - Base-Emitter Saturation Voltage - V 1·8 COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE TCE785AC IC = IC = IC = IC = 100 IB - Base Current - mA Figure 3. 2·0 10 A 7A 4A 1A AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAE785AA tp = 1 ms, d = 1% tp = 2 ms, d = 5% tp = 10 ms, d = 5% DC Operation 10 1·0 0.1 E T E L O S B O TIPL790 TIPL790A 0·01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 7. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5 TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C E T E L O S B O 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 0,64 0,41 2,90 2,40 5,28 4,88 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE 6 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.