TIPL770

TIPL770
NPN SILICON POWER TRANSISTOR
Rugged Triple-Diffused Planar Construction
2.5 A Continuous Collector Current
Operating Characteristics Fully Guaranteed
at 100°C
TO-220 PACKAGE
(TOP VIEW)
850 Volt Blocking Capability
B
1
C
2
50 W at 25°C Case Temperature
E
3
This series is obsolete and
not recommended for new designs.
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
SYMBOL
VALUE
UNIT
VCBO
850
V
VCES
E
T
E
L
O
S
B
O
V CEO
VEBO
850
400
10
IC
2.5
Continuous device dissipation at (or below) 25°C case temperature
Ptot
50
Storage temperature range
Tstg
Peak collector current (see Note 1)
Operating junction temperature range
NOTE
ICM
Tj
8
-65 to +150
-65 to +150
V
V
V
A
A
W
°C
°C
1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.
MARCH 1984 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIPL770
NPN SILICON POWER TRANSISTOR
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
VCEO(sus)
ICES
ICEO
IEBO
hFE
V CE(sat)
VBE(sat)
ft
Cob
Collector-emitter
sustaining voltage
TEST CONDITIONS
IC =
100 mA
L = 25 mH
MIN
(see Note 2)
TYP
MAX
400
UNIT
V
Collector-emitter
VCE = 850 V
VBE = 0
cut-off current
VCE = 850 V
VBE = 0
VCE = 400 V
IB = 0
5
µA
VEB =
10 V
IC = 0
1
mA
VCE =
5V
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Current gain
bandwidth product
Output capacitance
5
TC = 100°C
200
IC = 0.5 A
(see Notes 3 and 4)
(see Notes 3 and 4)
20
60
IB =
0.2 A
IC =
IB =
0.5 A
IC = 2.5 A
IB =
0.5 A
IC = 2.5 A
TC = 100°C
5.0
(see Notes 3 and 4)
1.0
1A
µA
1.0
2.5
V
IB =
0.2 A
IC =
IB =
0.5 A
IC = 2.5 A
IB =
0.5 A
IC = 2.5 A
TC = 100°C
VCE =
10 V
IC = 0.5 A
f=
1 MHz
12
MHz
VCB =
20 V
IE = 0
f = 0.1 MHz
55
pF
1A
1.2
V
1.3
E
T
E
L
O
S
B
O
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
MIN
TYP
Junction to case thermal resistance
MAX
UNIT
2.5
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
†
TEST CONDITIONS
†
MIN
MAX
UNIT
Voltage storage time
trv
Voltage rise time
tfi
Current fall time
tti
Current tail time
txo
Cross over time
tsv
Voltage storage time
2.5
µs
trv
Voltage rise time
400
ns
tfi
Current fall time
250
ns
tti
Current tail time
txo
Cross over time
IC = 2.5 A
VBE(off) = -5 V
IB(on) = 0.5 A
IC = 2.5 A
IB(on) = 0.5 A
VBE(off) = -5 V
TC = 100°C
(see Figures 1 and 2)
(see Figures 1 and 2)
2
µs
200
ns
200
ns
50
ns
300
ns
50
ns
500
ns
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
tsv
MARCH 1984 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIPL770
NPN SILICON POWER TRANSISTOR
PARAMETER MEASUREMENT INFORMATION
33 Ω
+5V
D45H11
BY205-400
33 Ω
BY205-400
RB
(on)
1 pF
180 µH
V Gen
1 kΩ
68 Ω
0.02 µF
vcc
2N2222
BY205-400
Vclamp = 400 V
TUT
1 kΩ
+5V
270 Ω
E
T
E
L
O
S
B
O
BY205-400
5X BY205-400
1 kΩ
2N2904
Adjust pw to obtain IC
D44H11
47 Ω
For IC < 6 A
VCC = 50 V
For IC ≥ 6 A
VCC = 100 V
V
100 Ω
BE(off)
Figure 1. Inductive-Load Switching Test Circuit
I B(on)
A - B = tsv
B - C = trv
D - E = tfi
E - F = tti
A (90%)
IB
Base Current
C
B - E = txo
V
CE
B
90%
10%
Collector Voltage
D (90%)
E (10%)
I
C(on)
Collector Current
F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF.
B. Resistors must be noninductive types.
Figure 2. Inductive-Load Switching Waveforms
MARCH 1984 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIPL770
NPN SILICON POWER TRANSISTOR
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TC = 125°C
TC = 25°C
TC = -65°C
VCE = 5 V
10
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCP770AD
100
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCP770AE
5
TC = 25°C
IC = 2.5 A
IC = 1.0 A
IC = 0.5 A
4
3
2
1
E
T
E
L
O
S
B
O
1·0
0·1
0
1·0
5·0
0
0·5
IC - Collector Current - A
3
2
1
TCP770AG
1·2
VBE(sat) - Base-Emitter Saturation Voltage - V
VCE(sat) - Collector-Emitter Saturation Voltage - V
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCP770AF
TC = 100°C
IC = 2.5 A
IC = 1.0 A
IC = 0.5 A
0
IC = 2.5 A
1·1
IC = 1 A
1·0
IC = 0.5 A
0·9
0·8
0·7
0
0·5
1·0
IB - Base Current - A
Figure 5.
1·5
2·0
0
0·2
0·4
0·6
0·8
1·0
1·2
1·4
1·6
IB - Base Current - A
Figure 6.
4
2·0
Figure 4.
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
4
1·5
IB - Base Current - A
Figure 3.
5
1·0
MARCH 1984 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIPL770
NPN SILICON POWER TRANSISTOR
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
10
SAP770AC
1·0
0.1
tp = 10 µs
1 ms
tp =
tp = 10 ms
DC Operation
E
T
E
L
O
S
B
O
0·01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 7.
MARCH 1984 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5