TIPL770 NPN SILICON POWER TRANSISTOR Rugged Triple-Diffused Planar Construction 2.5 A Continuous Collector Current Operating Characteristics Fully Guaranteed at 100°C TO-220 PACKAGE (TOP VIEW) 850 Volt Blocking Capability B 1 C 2 50 W at 25°C Case Temperature E 3 This series is obsolete and not recommended for new designs. Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current SYMBOL VALUE UNIT VCBO 850 V VCES E T E L O S B O V CEO VEBO 850 400 10 IC 2.5 Continuous device dissipation at (or below) 25°C case temperature Ptot 50 Storage temperature range Tstg Peak collector current (see Note 1) Operating junction temperature range NOTE ICM Tj 8 -65 to +150 -65 to +150 V V V A A W °C °C 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. MARCH 1984 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIPL770 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES ICEO IEBO hFE V CE(sat) VBE(sat) ft Cob Collector-emitter sustaining voltage TEST CONDITIONS IC = 100 mA L = 25 mH MIN (see Note 2) TYP MAX 400 UNIT V Collector-emitter VCE = 850 V VBE = 0 cut-off current VCE = 850 V VBE = 0 VCE = 400 V IB = 0 5 µA VEB = 10 V IC = 0 1 mA VCE = 5V Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance 5 TC = 100°C 200 IC = 0.5 A (see Notes 3 and 4) (see Notes 3 and 4) 20 60 IB = 0.2 A IC = IB = 0.5 A IC = 2.5 A IB = 0.5 A IC = 2.5 A TC = 100°C 5.0 (see Notes 3 and 4) 1.0 1A µA 1.0 2.5 V IB = 0.2 A IC = IB = 0.5 A IC = 2.5 A IB = 0.5 A IC = 2.5 A TC = 100°C VCE = 10 V IC = 0.5 A f= 1 MHz 12 MHz VCB = 20 V IE = 0 f = 0.1 MHz 55 pF 1A 1.2 V 1.3 E T E L O S B O NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC MIN TYP Junction to case thermal resistance MAX UNIT 2.5 °C/W inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER † TEST CONDITIONS † MIN MAX UNIT Voltage storage time trv Voltage rise time tfi Current fall time tti Current tail time txo Cross over time tsv Voltage storage time 2.5 µs trv Voltage rise time 400 ns tfi Current fall time 250 ns tti Current tail time txo Cross over time IC = 2.5 A VBE(off) = -5 V IB(on) = 0.5 A IC = 2.5 A IB(on) = 0.5 A VBE(off) = -5 V TC = 100°C (see Figures 1 and 2) (see Figures 1 and 2) 2 µs 200 ns 200 ns 50 ns 300 ns 50 ns 500 ns Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP tsv MARCH 1984 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIPL770 NPN SILICON POWER TRANSISTOR PARAMETER MEASUREMENT INFORMATION 33 Ω +5V D45H11 BY205-400 33 Ω BY205-400 RB (on) 1 pF 180 µH V Gen 1 kΩ 68 Ω 0.02 µF vcc 2N2222 BY205-400 Vclamp = 400 V TUT 1 kΩ +5V 270 Ω E T E L O S B O BY205-400 5X BY205-400 1 kΩ 2N2904 Adjust pw to obtain IC D44H11 47 Ω For IC < 6 A VCC = 50 V For IC ≥ 6 A VCC = 100 V V 100 Ω BE(off) Figure 1. Inductive-Load Switching Test Circuit I B(on) A - B = tsv B - C = trv D - E = tfi E - F = tti A (90%) IB Base Current C B - E = txo V CE B 90% 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF. B. Resistors must be noninductive types. Figure 2. Inductive-Load Switching Waveforms MARCH 1984 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIPL770 NPN SILICON POWER TRANSISTOR TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TC = 125°C TC = 25°C TC = -65°C VCE = 5 V 10 VCE(sat) - Collector-Emitter Saturation Voltage - V TCP770AD 100 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT TCP770AE 5 TC = 25°C IC = 2.5 A IC = 1.0 A IC = 0.5 A 4 3 2 1 E T E L O S B O 1·0 0·1 0 1·0 5·0 0 0·5 IC - Collector Current - A 3 2 1 TCP770AG 1·2 VBE(sat) - Base-Emitter Saturation Voltage - V VCE(sat) - Collector-Emitter Saturation Voltage - V BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT TCP770AF TC = 100°C IC = 2.5 A IC = 1.0 A IC = 0.5 A 0 IC = 2.5 A 1·1 IC = 1 A 1·0 IC = 0.5 A 0·9 0·8 0·7 0 0·5 1·0 IB - Base Current - A Figure 5. 1·5 2·0 0 0·2 0·4 0·6 0·8 1·0 1·2 1·4 1·6 IB - Base Current - A Figure 6. 4 2·0 Figure 4. COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 4 1·5 IB - Base Current - A Figure 3. 5 1·0 MARCH 1984 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIPL770 NPN SILICON POWER TRANSISTOR MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAP770AC 1·0 0.1 tp = 10 µs 1 ms tp = tp = 10 ms DC Operation E T E L O S B O 0·01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 7. MARCH 1984 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5