TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 6 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 120 W at 25°C Case Temperature E 3 SOT-93 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIPL762 Collector-base voltage (IE = 0) Emitter-base voltage Continuous collector current TIPL762A V CBO E T E L O S B O Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) SYMBOL TIPL762 TIPL762A TIPL762 TIPL762A VCES VCEO VALUE 850 1000 850 1000 400 450 UNIT V V V VEBO 10 V IC 6 A Peak collector current (see Note 1) ICM 12 A Continuous device dissipation at (or below) 25°C case temperature Ptot 120 W Tj -65 to +150 °C Tstg -65 to +150 °C Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES ICEO IEBO hFE VCE(sat) VBE(sat) ft Cob Collector-emitter sustaining voltage TEST CONDITIONS IC = 100 mA L = 25 mH MIN (see Note 2) TIPL762 400 TIPL762A 450 TYP MAX V VCE = 850 V VBE = 0 TIPL762 Collector-emitter VCE = 1000 V VBE = 0 TIPL762A cut-off current VCE = 850 V VBE = 0 TC = 100°C TIPL762 200 VCE = 1000 V VBE = 0 TC = 100°C TIPL762A 200 Collector cut-off VCE = 400 V IB = 0 TIPL762 50 current VCE = 450 V IB = 0 TIPL762A 50 VEB = 10 V IC = 0 VCE = 5V Emitter cut-off current Forward current transfer ratio IB = 0.4 A IC = 2A Collector-emitter IB = 0.8 A IC = 4A saturation voltage IB = 1.2 A IC = 6A IB = 1.2 A IC = 6A IB = 0.4 A IC = 2A Base-emitter saturation voltage Current gain bandwidth product Output capacitance 50 50 1 IC = 0.5 A (see Notes 3 and 4) UNIT 20 µA µA mA 60 0.5 (see Notes 3 and 4) 1.0 2.5 TC = 100°C V 5.0 1.1 E T E L O S B O IB = 0.8 A IC = 4A IB = 1.2 A IC = 6A IB = 1.2 A IC = 6A VCE = 10 V IC = 0.5 A f= VCB = 20 V IE = 0 f = 0.1 MHz (see Notes 3 and 4) 1.3 1.5 TC = 100°C 1 MHz V 1.4 6 MHz 105 pF NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC MIN TYP Junction to case thermal resistance MAX UNIT 1.25 °C/W inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER † TEST CONDITIONS † MIN MAX UNIT Voltage storage time 2.5 µs trv Voltage rise time 200 ns tfi Current fall time 150 ns tti Current tail time txo Cross over time tsv Voltage storage time trv Voltage rise time tfi Current fall time tti Current tail time txo Cross over time IC = 6 A VBE(off) = -10 V IB(on) = 1.2 A IC = 6 A IB(on) = 1.2 A VBE(off) = -10 V TC = 100°C (see Figures 1 and 2) (see Figures 1 and 2) 50 ns 300 ns 3 µs 300 ns 150 ns 50 ns 500 ns Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP tsv AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION 33 Ω +5V D45H11 BY205-400 33 Ω BY205-400 RB (on) 1 pF 180 µH V Gen 1 kΩ 68 Ω 0.02 µF vcc 2N2222 BY205-400 Vclamp = 400 V TUT 1 kΩ +5V 270 Ω E T E L O S B O BY205-400 5X BY205-400 1 kΩ 2N2904 Adjust pw to obtain IC D44H11 47 Ω For IC < 6 A VCC = 50 V For IC ≥ 6 A VCC = 100 V V 100 Ω BE(off) Figure 1. Inductive-Load Switching Test Circuit I B(on) A - B = tsv B - C = trv D - E = tfi E - F = tti A (90%) IB Base Current C B - E = txo V CE B 90% 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF. B. Resistors must be noninductive types. Figure 2. Inductive-Load Switching Waveforms AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCP762AE 100 TC = 125°C TC = 25°C TC = -65°C VCE = 5 V hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 10 TCP762AH 5·0 IC = 1 A IC = 2 A IC = 4 A IC = 6 A TC = 25°C 4·0 3·0 2·0 1·0 E T E L O S B O 1·0 0·1 0 1·0 10 0 0·5 IC - Collector Current - A 1·0 3·0 2·0 1·0 TCP762AJ 1·2 VBE(sat) - Base-Emitter Saturation Voltage - V VCE(sat) - Collector-Emitter Saturation Voltage - V BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT TCP762AI IC = 1 A IC = 2 A IC = 4 A IC = 6 A TC = 100°C 0 TC = 25°C 1·1 1·0 0·9 IC = IC = IC = IC = 0·8 6 4 2 1 A A A A 0·7 0 0·5 1·0 1·5 IB - Base Current - A Figure 5. 2·0 2·5 0 0·2 0·4 0·6 0·8 1·0 1·2 1·4 1·6 1·8 2·0 IB - Base Current - A Figure 6. 4 2·5 Figure 4. COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 4·0 2·0 IB - Base Current - A Figure 3. 5·0 1·5 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE TCP762AF ICES - Collector Cut-off Current - µA 10 1·0 TIPL762A VCE = 1000 V 0·1 TIPL762 VCE = 850 V 0·01 E T E L O S B O 0·001 -80 -60 -40 -20 0 20 40 60 80 100 120 140 TC - Case Temperature - °C Figure 7. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAP762AB 10 1·0 0.1 tp = 100 µs tp = 1 ms tp = 10 ms DC Operation 0·01 1·0 TIPL762 TIPL762A 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 8. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5 TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS ZθJC / RθJC - Normalised Transient Thermal Impedance THERMAL INFORMATION THERMAL RESPONSE JUNCTION TO CASE vs POWER PULSE DURATION TCP762AG 1·0 50% 20% 0·1 10% 5% 2% 0·01 1% t1 0% duty cycle = t1/t2 Read time at end of t1, t2 E T E L O S B O 0·001 10-5 TJ(max) - TC = PD(peak) · 10-4 10-3 ( ) ZθJC RθJC 10-2 · R θJC(max) 10-1 t1 - Power Pulse Duration - s Figure 9. 6 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.