TIPL760, TIPL760A

TIPL760, TIPL760A
NPN SILICON POWER TRANSISTORS
Rugged Triple-Diffused Planar Construction
4 A Continuous Collector Current
Operating Characteristics Fully Guaranteed
at 100°C
TO-220 PACKAGE
(TOP VIEW)
1000 Volt Blocking Capability
B
1
C
2
75 W at 25°C Case Temperature
E
3
This series is obsolete and
not recommended for new designs.
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
TIPL760
Emitter-base voltage
Continuous collector current
TIPL760A
V CBO
E
T
E
L
O
S
B
O
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
SYMBOL
Peak collector current (see Note 1)
TIPL760
TIPL760A
TIPL760
TIPL760A
VCES
VCEO
VEBO
IC
ICM
Continuous device dissipation at (or below) 25°C case temperature
Ptot
Storage temperature range
Tstg
Operating junction temperature range
NOTE
Tj
VALUE
850
1000
850
1000
400
450
10
4
8
75
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
W
°C
°C
1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIPL760, TIPL760A
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
VCEO(sus)
ICES
ICEO
IEBO
hFE
V CE(sat)
VBE(sat)
ft
Cob
Collector-emitter
sustaining voltage
TEST CONDITIONS
IC =
10 mA
L = 25 mH
MIN
(see Note 2)
TIPL760
400
TIPL760A
450
TYP
MAX
V
VCE = 850 V
VBE = 0
TIPL760
Collector-emitter
VCE = 1000 V
VBE = 0
TIPL760A
cut-off current
VCE = 850 V
VBE = 0
TC = 100°C
TIPL760
200
TC = 100°C
TIPL760A
200
50
50
VCE = 1000 V
VBE = 0
Collector cut-off
VCE = 400 V
IB = 0
TIPL760
50
current
VCE = 450 V
IB = 0
TIPL760A
50
VEB =
10 V
IC = 0
VCE =
5V
IC = 0.5 A
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Current gain
bandwidth product
Output capacitance
1
(see Notes 3 and 4)
20
µA
µA
mA
60
IB =
0.5 A
IC = 2.5 A
IB =
0.8 A
IC =
4A
(see Notes 3 and 4)
2.5
IB =
0.8 A
IC =
4A
TC = 100°C
5.0
IB =
0.5 A
IC = 2.5 A
IB =
0.8 A
IC =
4A
UNIT
1.0
V
1.2
(see Notes 3 and 4)
1.4
E
T
E
L
O
S
B
O
V
IB =
0.8 A
IC =
VCE =
10 V
IC = 0.5 A
f=
1 MHz
12
MHz
VCB =
20 V
IE = 0
f = 0.1 MHz
110
pF
4A
TC = 100°C
1.3
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
MIN
TYP
Junction to case thermal resistance
MAX
UNIT
1.56
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
†
tsv
Voltage storage time
trv
Voltage rise time
tfi
Current fall time
tti
Current tail time
txo
Cross over time
tsv
Voltage storage time
trv
Voltage rise time
tfi
Current fall time
tti
Current tail time
txo
Cross over time
TEST CONDITIONS
IC = 4 A
VBE(off) = -5 V
IB(on) = 0.8 A
IC = 4 A
IB(on) = 0.8 A
VBE(off) = -5 V
TC = 100°C
†
MIN
(see Figures 1 and 2)
(see Figures 1 and 2)
MAX
UNIT
2.5
µs
300
ns
250
ns
150
ns
400
ns
3
µs
500
ns
250
ns
150
ns
750
ns
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIPL760, TIPL760A
NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION
33 Ω
+5V
D45H11
BY205-400
33 Ω
BY205-400
RB
(on)
1 pF
180 µH
V Gen
1 kΩ
68 Ω
0.02 µF
vcc
2N2222
BY205-400
Vclamp = 400 V
TUT
1 kΩ
+5V
270 Ω
E
T
E
L
O
S
B
O
BY205-400
5X BY205-400
1 kΩ
2N2904
Adjust pw to obtain IC
D44H11
47 Ω
For IC < 6 A
VCC = 50 V
For IC ≥ 6 A
VCC = 100 V
V
100 Ω
BE(off)
Figure 1. Inductive-Load Switching Test Circuit
I B(on)
A - B = tsv
B - C = trv
D - E = tfi
E - F = tti
A (90%)
IB
Base Current
C
B - E = txo
V
CE
B
90%
10%
Collector Voltage
D (90%)
E (10%)
I
C(on)
Collector Current
F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF.
B. Resistors must be noninductive types.
Figure 2. Inductive-Load Switching Waveforms
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIPL760, TIPL760A
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCP741AA
100
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TC = 125°C
TC = 25°C
TC = -65°C
VCE = 5 V
10
TCP741AB
5·0
TC = 25°C
TC = 100°C
4·0
IC =
IC =
IC =
IC =
3·0
1·0
0
1·0
10
0
0·5
IC - Collector Current - A
1·0
1·15
1·05
0·95
IC =
IC =
IC =
IC =
0·85
4
3
2
1
A
A
A
A
0·75
0·2
0·4
0·6
0·8
1·0
IB - Base Current - A
Figure 5.
1·2
1·4
1·6
1·0
TIPL760A
VCE = 1000 V
0·1
TIPL760
VCE = 850 V
0·01
0·001
-60
-30
0
30
60
90
120
TC - Case Temperature - °C
Figure 6.
4
TCP741AP
10
ICES - Collector Cut-off Current - µA
VBE(sat) - Base-Emitter Saturation Voltage - V
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
TCP741AC
TC = 25°C
2·0
Figure 4.
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
1·25
1·5
IB - Base Current - A
Figure 3.
0
A
A
A
A
2·0
E
T
E
L
O
S
B
O
1·0
0·1
4
3
2
1
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIPL760, TIPL760A
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAP741AE
IC - Collector Current - A
10
1·0
0.1
10 µs
tp =
tp = 100 µs
tp =
1 ms
tp = 10 ms
DC Operation
E
T
E
L
O
S
B
O
0·01
1·0
TIPL760
TIPL760A
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 7.
ZθJC/RθJC - Normalised Transient Thermal Impedance
THERMAL INFORMATION
THERMAL RESPONSE JUNCTION TO CASE
vs
POWER PULSE DURATION
TCP741AM
1·0
50%
20%
10%
0·1
5%
0%
duty cycle = t1/t2
Read time at end of t1,
TJ(max) - TC = PD(peak) ·
0·01
10-5
10-4
10-3
t1
t2
( )
10-2
ZθJC
RθJC
· R θJC(max)
10-1
100
t1 - Power Pulse Duration - s
Figure 8.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5