Power Transistors 2SB1574 (Tentative) Silicon PNP epitaxial planar type Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 For low-frequency output amplification 2.3±0.1 ● ● 1.0±0.1 0.1±0.05 0.8max 0.93±0.1 2.3±0.1 4.6±0.1 1 (TC=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V Peak collector current ICP –3 A Collector current IC –2 A Collector power dissipation (TC=25°C) PC 10 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 Parameter Unit: mm 6.5±0.2 5.35 4.35 0.75 2.3 2.3 0.6 0.5±0.1 ˚C 1 ■ Electrical Characteristics 3 1.8 Parameter 2 1:Base 2:Collector 3:Emitter U Type Package 6.0 ■ Absolute Maximum Ratings 0.5±0.1 0.75±0.1 5.5±0.2 13.3±0.3 ● Possible to solder radiation fin directly to printed cicuit boad Type with universal characteristics Collector breakdown voltage: VCBO/VCEO = –50V Collector current: IC = –2A 2 3 2.3±0.1 ● 2.5±0.1 ■ Features 1.0±0.2 1.8±0.1 7.3±0.1 0.5±0.1 1:Base 2:Collector 3:Emitter EIAJ:SC–63 U Type Package (Z) (TC=25˚C) Symbol Conditions min typ max Unit µA ICBO Collector to base voltage VCBO IC = –10µA, IE = 0 –50 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –50 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 hFE1* VCE = –2V, IC = –200mA 120 60 Forward current transfer ratio VCB = –10V, IE = 0 – 0.1 Collector cutoff current V 340 hFE2 VCE = –2V, IC = –1A Collector to emitter saturation voltage VCE(sat) IC = –1A, IB = –50mA – 0.2 – 0.3 Base to emitter saturation voltage VBE(sat) IC = –1A, IB = –50mA – 0.85 –1.2 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 80 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 45 *h FE1 V V MHz 60 pF Rank classification Rank R S hFE1 120 to 240 170 to 340 1