Composite Transistors XN09D58 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 • XN9D57 + MA3ZD12 SBD 1 2 V Collector-emitter voltage (Base open) VCEO −15 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −2.5 A Peak collector current ICP −10 A Reverse voltage VR 20 V Repetitive peak reverse voltage VRRM 25 V Forward current (Average) IF(AV) 700 mA Non-repetitive peak IFSM 2 A PT 600 mW 1.1+0.2 –0.1 Unit −15 1: Emitter 2: Base 3: Anode Total power dissipation * Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 5° 1.1+0.3 –0.1 Rating VCBO 0 to 0.1 Symbol Collector-base voltage (Emitter open) 4: Collector (Cathode) 5: Collector (Cathode) 6: Collector (Cathode) Mini6-G1 Package Marking Symbol: EF Internal Connection forward surge current Overall 2.8+0.2 –0.3 3 Display at No.1 lead 10° ■ Absolute Maximum Ratings Ta = 25°C Parameter 4 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Basic Part Number Tr 5 1.50+0.25 –0.05 6 • Two elements incorporated into one package (Tr + SBD) • Reduction of the mounting area and assembly cost by one half • Low collector-emitter saturation voltage VCE(sat) (0.65) ■ Features 0.4±0.2 For DC-DC converter 6 5 4 1 2 3 Note) *: Measuring on ceramic substrate at 15 mm × 15 mm × 0.6 mm ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −15 Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −15 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5 V Collector-base cutoff current (Emitter open) ICBO VCB = −10 V, IE = 0 Forward current transfer ratio * hFE1 VCE = −2 V, IC = −100 mA 200 hFE2 VCE = −2 V, IC = −2.5 A 100 VCE(sat) IC = −1 A, IB = −10 mA −140 IC = −2.5 A, IB = −50 mA −270 Collector-emitter saturation voltage * Conditions Min Typ Max Unit V − 0.1 µA 560 mV −320 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement Publication date: March 2004 SJJ00246CED 1 XN09D58 ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C • Tr (continued) Parameter Symbol Collector output capacitance (Common base, input open circuited) Cob Conditions Min Typ Max Unit VCB = −10 V, IE = 0, f = 1 MHz 40 pF fT VCB = −10 V, IE = 50 mA, f = 200 MHz 180 MHz Turn-on time ton Refer to the switching time measurement circuit 35 ns Storage time tstg 110 ns Turn-off time toff 10 ns Transition frequency Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Switching time measurement circuit IB2 IB1 Input Output RB PW = 20 µs DC ≤ 1% RL 470 µF VCC = −5 V −20IB1 = 20IB2 = IC = −1.5 A • SBD Parameter Symbol Conditions VF IF = 700 mA Reverse current IR VR = 20 V Terminal capacitance Ct VR = 0, f = 1 MHz Reverse recovery time trr IF = IR = 100 mA, Irr = 10 mA RL = 100 Ω Forward voltage Min Typ Max Unit 0.45 V 200 µA 100 pF 7 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for diodes. 2. Schottky barrier diode is frail with static electricity, and it should be kept in safety from shock of static electricity and static electricity level. Common characteristics chart Total power dissipation PT (mW) PT Ta 600 400 200 0 0 40 80 120 Ambient temperature Ta (°C) 2 SJJ00246CED XN09D58 Characteristics charts of Tr IB = −300 µA Collector current IC (A) − 0.16 −250 µA − 0.12 −200 µA − 0.08 −150 µA −100 µA − 0.04 −50 µA 0 0 −2 −4 −6 −8 −10 hFE IC IC / IB = 50 −1 Ta = 75°C −25°C − 0.1 25°C − 0.01 − 0.01 Collector-emitter voltage VCE (V) 600 Forward current transfer ratio hFE Ta = 25°C − 0.20 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE − 0.1 −1 500 Ta = 75°C 25°C 400 −25°C 300 200 100 0 − 0.01 −10 VCE = −2 V − 0.1 −1 −10 Collector current IC (A) Collector current IC (A) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 100 f = 1 MHz Ta = 25°C 10 0 −4 −8 −12 −16 Collector-base voltage VCB (V) Characteristics charts of SBD IF V F IR Ta 25°C 0.4 −25°C 0 0.4 0.8 Forward voltage VF (V) 1.2 1 000 Terminal capacitance Ct (pF) Ta = 85°C 0.8 0 Ct VR 104 Reverse current IR (mA) Forward current IF (A) 1.2 103 102 10 1 −25 −5 15 35 55 75 Ambient temperature Ta (°C) SJJ00246CED f = 1 MHz Ta = 25°C 100 10 0 10 20 Reverse voltage VR (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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