PANASONIC 2SD2479

Power Transistors
2SD2479
Silicon NPN epitaxial planar type
Unit: mm
For low-frequency amplification
0.85±0.1
1.0±0.1 0.8 C
16.0±1.0
2.5±0.1
0.65±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
120
V
Collector-emitter voltage (Base open)
VCEO
100
V
Emitter-base voltage (Collector open)
VEBO
5
V
Collector current
IC
2
A
Peak collector current
ICP
3
A
Collector power dissipation
PC
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.8 C
0.7±0.1
0.7±0.1
1.15±0.2
1.15±0.2
0.4±0.1
0.5±0.1
0.8 C
1
2
2.5±0.2
3
2.05±0.2
• High forward current transfer ratio hFE
• Allowing supply with the radial taping
90˚
10.8±0.2
■ Features
4.5±0.2
3.8±0.2
7.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Internal Connection
C
B
E
≈ 200 Ω
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 100 µA, IE = 0
120
V
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
100
V
Emitter-base voltage (Collector open)
VEBO
IE = 100 µA, IC = 0
Collector-base cutoff current (Emitter open)
ICBO
VCB = 25 V, IE = 0
Emitter-base cutoff current (Collector open)
IEBO
VEB = 4 V, IC = 0
Forward current transfer ratio *1, 2
hFE
VCE = 10 V, IC = 1 A
VCE(sat)
IC = 1 A, IB = 1 mA
1.5
V
VBE(sat)
IC = 1 A, IB = 1 mA
2
V
Collector-emitter saturation voltage
Base-emitter saturation voltage *1
Transition frequency
*1
Conditions
VCB = 10 V, IE = −50 mA, f = 200 MHz
fT
Min
Typ
Max
5
Unit
V
4 000
150
0.1
µA
1
µA
40 000

MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
hFE
Q
R
S
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Publication date: February 2003
SJD00269BED
1
2SD2479
IC  VCE
1.2
0.8
0.4
VCE = 10 V
IB = 1.0 mA
4
Collector current IC (A)
Collector power dissipation PC (mW)
IC  VBE
1.2
Ta = 25°C
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
3
0.4 mA
0.3 mA
2
0.2 mA
Collector current IC (A)
PC  Ta
1.6
Ta = 85°C
0.8
25°C
−25°C
0.4
1
0.1 mA
0
0
40
80
120
160
0
2
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 1 000
Ta = −25°C
25°C
1
85°C
1
10
102
103
8
104
Collector current IC (A)
100
25°C
−25°C
1
0.1
1
10
102
10
20
30
40
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Collector-base voltage VCB (V)
2
103
Collector current IC (A)
f = 1 MHz
Ta = 25°C
0
0
1
SJD00269BED
2
3
Base-emitter voltage VBE (V)
hFE  IC
Ta = 85°C
10
100
10
0
12
IC / IB = 1 000
Cob  VCB
1 000
10
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
VBE(sat)  IC
0.1
6
Collector-emitter voltage VCE (V)
Ambient temperature Ta (°C)
10
4
10 000
VCE = 10 V
Forward current transfer ratio hFE
0
104
8 000
Ta = 85°C
6 000
25°C
4 000
−25°C
2 000
0
1
10
102
103
Collector current IC (A)
104
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and semiconductors described in this material
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Consult our sales staff in advance for information on the following applications:
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notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
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2002 JUL