Power Transistors 2SD2479 Silicon NPN epitaxial planar type Unit: mm For low-frequency amplification 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 120 V Collector-emitter voltage (Base open) VCEO 100 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 2 A Peak collector current ICP 3 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.4±0.1 0.5±0.1 0.8 C 1 2 2.5±0.2 3 2.05±0.2 • High forward current transfer ratio hFE • Allowing supply with the radial taping 90˚ 10.8±0.2 ■ Features 4.5±0.2 3.8±0.2 7.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package Internal Connection C B E ≈ 200 Ω ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 100 µA, IE = 0 120 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 100 V Emitter-base voltage (Collector open) VEBO IE = 100 µA, IC = 0 Collector-base cutoff current (Emitter open) ICBO VCB = 25 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0 Forward current transfer ratio *1, 2 hFE VCE = 10 V, IC = 1 A VCE(sat) IC = 1 A, IB = 1 mA 1.5 V VBE(sat) IC = 1 A, IB = 1 mA 2 V Collector-emitter saturation voltage Base-emitter saturation voltage *1 Transition frequency *1 Conditions VCB = 10 V, IE = −50 mA, f = 200 MHz fT Min Typ Max 5 Unit V 4 000 150 0.1 µA 1 µA 40 000 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE Q R S 4 000 to 10 000 8 000 to 20 000 16 000 to 40 000 Publication date: February 2003 SJD00269BED 1 2SD2479 IC VCE 1.2 0.8 0.4 VCE = 10 V IB = 1.0 mA 4 Collector current IC (A) Collector power dissipation PC (mW) IC VBE 1.2 Ta = 25°C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 3 0.4 mA 0.3 mA 2 0.2 mA Collector current IC (A) PC Ta 1.6 Ta = 85°C 0.8 25°C −25°C 0.4 1 0.1 mA 0 0 40 80 120 160 0 2 Base-emitter saturation voltage VBE(sat) (V) IC / IB = 1 000 Ta = −25°C 25°C 1 85°C 1 10 102 103 8 104 Collector current IC (A) 100 25°C −25°C 1 0.1 1 10 102 10 20 30 40 Collector output capacitance C (pF) (Common base, input open circuited) ob Collector-base voltage VCB (V) 2 103 Collector current IC (A) f = 1 MHz Ta = 25°C 0 0 1 SJD00269BED 2 3 Base-emitter voltage VBE (V) hFE IC Ta = 85°C 10 100 10 0 12 IC / IB = 1 000 Cob VCB 1 000 10 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) VBE(sat) IC 0.1 6 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 10 4 10 000 VCE = 10 V Forward current transfer ratio hFE 0 104 8 000 Ta = 85°C 6 000 25°C 4 000 −25°C 2 000 0 1 10 102 103 Collector current IC (A) 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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