Composite Transistors UP04501 Silicon NPN epitaxial planar type 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) 1 (0.20) 4 ■ Features • Two elements incorporated into one package (Each transistor is separated) • Reduction of the mounting area and assembly cost by one half 0.10±0.02 1.60±0.05 5 1.20±0.05 6 Unit: mm 0.20+0.05 –0.02 (0.30) For general amplification Display at No.1 lead 5˚ 0.10 max. • 2SD0601A × 2 0.55±0.05 ■ Basic Part Number Parameter Symbol Rating Unit Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) VCBO VCEO VEBO 60 50 7 V V V Collector current IC 100 mA Peak collector current ICP 200 mA Total power dissipation PT 125 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) 0 to 0.02 ■ Absolute Maximum Ratings Ta = 25°C 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package Marking Symbol: 5H Internal Connection 6 5 Tr1 1 4 Tr2 2 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 µA hFE VCE = 10 V, IC = 2 mA 390 0.3 V Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob Conditions Min Typ 180 IC = 100 mA, IB = 10 mA Max Unit VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: December 2003 SJJ00232BED 1 UP04501 PT Ta IC VCE 50 125 IB = 160 µA Ta = 25°C 50 120 µA 100 µA 30 80 µA 20 60 µA 40 µA 80 40 20 µA 0 80 120 160 0 4 8 25°C 100 Collector current IC (mA) 8 6 4 2 80 Ta = 75°C −25°C 60 40 20 0 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 hFE IC 400 VCE = 10 V Ta = 75°C 320 25°C 240 −25°C 160 80 0 10−1 1 10 102 0.8 Base-emitter voltage VBE (V) Base-emitter voltage VBE (V) 103 Collector current IC (mA) SJJ00232BED 0.8 1.2 VCE(sat) IC VCE = 10 V VCE = 10 V Ta = 25°C 0.4 Base current IB (mA) IC VBE 120 0 0 Collector-emitter voltage VCE (V) IB VBE 10 0 12 1.0 Collector-emitter saturation voltage VCE(sat) (V) 40 Ambient temperature Ta (°C) Base current IB (mA) 120 10 25 0 Forward current transfer ratio hFE Collector current IC (mA) 75 0 2 VCE = 10 V Ta = 25°C 40 100 0 IC I B 160 140 µA Collector current IC (mA) Total power dissipation PT (mW) 150 10 IC / IB = 10 1 10−1 Ta = 75°C 25°C −25°C 10−2 10−3 10−1 1 10 Collector current IC (mA) 102 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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