Composite Transistors XN01558 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 4 5 2 1 (0.65) 0.30+0.10 –0.05 ■ Basic Part Number 5˚ • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half 2.8+0.2 –0.3 1.50+0.25 –0.05 ■ Features 0.4±0.2 For low-frequency amplification 0.16+0.10 –0.06 10˚ Parameter Symbol Rating Unit Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) VCBO VCEO VEBO 25 20 12 V V V Collector current IC 0.5 A Peak collector current ICP 1 A Total power dissipation PT 300 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.1+0.3 –0.1 1.1+0.2 –0.1 • 2SD2623 × 2 1: Collector (Tr1) 2: Collector (Tr2) 3: Base (Tr2) EIAJ: SC-74A 4: Emitter 5: Base (Tr1) Mini5-G1 Package Marking Symbol: 4Z Internal Connection 3 5 Tr2 Tr1 2 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 25 Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 20 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 12 V Collector-base cutoff current (Emitter open) ICBO VCB = 25 V, IE = 0 Forward current transfer ratio *1 hFE VCE = 2 V, IC = 0.5 A 200 hFE(Small VCE = 2 V, IC = 0.5 A 0.50 hFE ratio *1, 2 Conditions 4 Min Typ Max Unit V 100 nA 800 0.99 /Large) Collector-emitter saturation voltage *1 VCE(sat) IC = 0.5 A, IB = 20 mA Base-emitter saturation voltage *1 VBE(sat) IC = 0.5 A, IB = 50 mA Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob ON resistanse *3 Ron 0.14 V 1.2 V VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 10 pF Ω 1.0 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Ratio between one and another device 1 kΩ *3: Ron test circuit IB = 1 mA SJJ00264BED f = 1 kHz V = 0.3 V VB VV Ron = Publication date: December 2003 0.40 VA VB × 1 000 (Ω) VA − VB 1 XN01558 PT Ta IC VCE VCE(sat) IC IB = 4.0 mA 3.5 mA 3.0 mA 2.5 mA 400 Collector current IC (A) 300 200 1.5 mA 1.0 mA 0.4 0.5 mA 0.2 100 0 2.0 mA 0.6 0 40 80 120 0 160 Ta = 25°C 0 Ambient temperature Ta (°C) 1 2 Ta = −25°C 75°C 10−1 10−2 1 10 102 103 104 Collector current IC (µA) 2 Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) 25°C 5 IC / IB = 25 10−1 Ta = 75°C 25°C −25°C 10−2 10−3 10−1 6 105 Ta = 75°C 25°C 360 −25°C 240 120 0 10−1 1 10 102 Collector current IC (mA) SJJ00264BED 102 10 103 Cob VCB VCE = 2 V 480 1 Collector current IC (mA) hFE IC 600 IC / IB = 10 1 4 1 Collector-emitter voltage VCE (V) VBE(sat) IC 10 3 103 Collector output capacitance C (pF) (Common base, input open circuited) ob Total power dissipation PT (mW) 0.8 Collector-emitter saturation voltage VCE(sat) (V) 500 102 f = 1 MHz Ta = 25°C 10 1 0 10 20 Collector-base voltage VCB (V) 30 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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