Power Transistor Arrays PUA3117 (PU3117) Silicon NPN triple diffusion planar type For power amplification and switching Unit: mm 20.2±0.3 4.0±0.2 9.5±0.2 1.65±0.2 • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • NPN 3 elements Solder Dip 5.3±0.5 4.4±0.5 0.8±0.25 ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 60 V Emitter-base voltage (Collector open) VEBO 6 V Collector current IC 3 A Peak collector current ICP 6 A Base current IB 1 A 15 W Collector power dissipation PC Ta = 25°C 8.0±0.2 ■ Features 0.5±0.15 1.0±0.25 2.54±0.2 0.5±0.15 7 × 2.57 = 17.78±0.25 C 1.5±0.5 1: Emitter 2: Base 3: Collector 1 2 3 4 5 6 7 8 4: Base 5: Collector 6: Base 7: Collector 8: Emitter SIP8-A1 Package 2.4 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = 25 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO VCB = 80 V, IE = 0 100 µA Collector-emitter cutoff current (Base open) ICEO VCE = 40 V, IB = 0 100 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 100 µA Forward current transfer ratio hFE VCE = 4 V, IC = 0.5 A 2 500 VCE(sat) IC = 2 A, IB = 0.05 A Collector-emitter saturation voltage Transition frequency fT Conditions VCE = 12 V, IC = 0.2 A, f = 10 MHz Min Typ Max 60 Unit V 500 1.0 50 V MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. ■ Internal Connection 5 3 2 4 1 7 6 8 Note) The part number in the parenthesis shows conventional part number. Publication date: April 2003 SJK00007AED 1 PUA3117 PC Ta 8 (2) 0 (3) 0.6 mA 0.6 0.5 mA 0.4 mA 0.4 0.3 mA 0.2mA 80 120 0 160 0 Ambient temperature Ta (°C) 2 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) TC = 100°C 25°C 1 −25°C 0.1 1 TC = 100°C 102 10 10 103 100 Non repetitve pulse TC = 25°C (Per circuit) 102 10 10 100 10 ICP t = 1 ms t = 10 ms 1 0.1 0.01 1 10 100 1 000 Collector-emitter voltage VCE (V) SJK00007AED 0.4 0.6 0.8 1.0 1.2 VCE = 12 V TC = 25°C 103 102 10 1 0.01 0.1 1 Collector current IC (A) Collector current IC (A) Collector current IC (A) Collector output capacitance C (pF) (Common base, input open circuited) ob 1 Safe operation area Collector-base voltage VCB (V) 2 25°C 0.1 0.2 Base-emitter voltage VBE (V) fT I C −25°C 1 0.01 10 IE = 0 f = 1 MHz TC = 25°C 1 0 104 103 Cob VCB 1 0.1 0 12 VCE = 4 V Collector current IC (A) 104 10 hFE IC 10 0.01 0.01 8 104 IC / IB = 40 0.1 6 2 Collector-emitter voltage VCE (V) VCE(sat) IC 100 4 −25°C 3 1 0.1 mA 40 25°C TC = 100°C 4 0.7 mA 0.2 (4) 0 VCE = 4 V 1 mA 0.8 12 4 IB = 1.2 mA TC = 25°C Collector current IC (A) (1) IC VBE 5 Transition frequency fT (MHz) 16 IC VCE 1.0 (1) TC = Ta (2) With a 50 × 50 × 2 mm Al heat sink (3) With a 50 × 25 × 2 mm Al heat sink (4) Without heat sink Collector current IC (A) Collector power dissipation PC (W) 20 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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