Power Transistors 2SA0900 (2SA900) Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 1.9±0.1 3.05±0.1 • Low collector-emitter saturation voltage VCE(sat) • TO-126B package which requires no insulation plate for installation to the heat sink 11.0±0.5 ■ Features 16.0±1.0 3.8±0.3 φ 3.16±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −20 V Collector-emitter voltage (Base open) VCEO −18 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −1 A Peak collector current ICP −2 A Collector power dissipation PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.75±0.1 0.5±0.1 4.6±0.2 1 2 0.5±0.1 1.76±0.1 2.3±0.2 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 Conditions Min −20 Typ Max Unit Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −18 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5 V Collector-base cutoff current (Emitter open) ICBO VCB = −10 V, IE = 0 −1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −18 V, IB = 0 −10 µA 280 V VCE = −2 V, IC = −500 mA 130 hFE2 VCE = −2 V, IC = −1.5 A 50 Collector-emitter saturation voltage VCE(sat) IC = −1 A, IB = −50 mA − 0.5 V Base-emitter saturation voltage VBE(sat) IC = −500 mA, IB = −50 mA −1.2 V Forward current transfer ratio hFE1 Transition frequency * fT Collector output capacitance (Common base, input open circuited) Cob VCB = −6 V, IE = 50 mA, f = 200 MHz 200 MHz VCB = −6 V, IE = 0, f = 1 MHz 40 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R S hFE1 130 to 210 180 to 280 Note) The part numbers in the parenthesis show conventional part number. Publication date: April 2003 SJD00004BED 1 2SA0900 TC = 25°C IB = −5.0 mA − 0.8 −4.5 mA −4.0 mA − 0.6 −3.5 mA −3.0 mA −2.5 mA Collector current IC (A) 4 3 (1) −2.0 mA − 0.4 2 (2) −1.5 mA −1.0 mA − 0.2 1 0 40 80 120 − 0.5 mA 0 160 −1 0 −3 −4 −5 −6 Collector-emitter voltage VCE (V) VBE(sat) IC hFE IC IC / IB = 20 −10 −1 TC = 100°C 25°C − 0.01 − 0.01 − 0.1 100°C fT I E 25°C − 0.1 10 1 − 0.01 −1 Collector current IC (A) 500 VCB = −6 V TC = 25°C ICP Collector current IC (A) 80 Single pulse TC = 25°C t = 10 ms IC t=1s − 0.1 60 40 − 0.01 20 −10 −100 Collector-base voltage VCB (V) − 0.001 − 0.1 −1 −10 −100 Collector-emitter voltage VCE (V) SJD00004BED 300 200 100 100 Emitter current IE (mA) Safe operation area −1 400 0 10 −1 −10 IE = 0 f = 1 MHz TC = 25°C 100 − 0.1 Collector current IC (A) Cob VCB 120 25°C −25°C 100 −1 Collector current IC (A) VCE = −2 V TC = 100°C −25°C − 0.1 Transition frequency fT (MHz) TC = −25°C −1 0 −1 IC / IB = 20 −10 1 000 − 0.01 − 0.01 Collector output capacitance C (pF) (Common base, input open circuited) ob −2 Ambient temperature Ta (°C) − 0.1 2 VCE(sat) IC −1.0 Forward current transfer ratio hFE Collector power dissipation PC (W) 5 0 Base-emitter saturation voltage VBE(sat) (V) IC VCE −1.2 (1) With a 100 × 100 × 2 mm Al heat sink (2) Without heat sink Collector-emitter saturation voltage VCE(sat) (V) PC Ta 6 1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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