Transistors with built-in Resistor UN8231/UN8231A Silicon NPN epitaxial planer transistor Unit: mm 1.05 2.5±0.1 ±0.05 6.9±0.1 0.7 4.0 0.8 ● 0.65 max. 14.5±0.5 High forward current transfer ratio hFE. Resistor built-in type, allowing downsizing of the equipment and reduction of the number of parts. Available in a type with radial taping. 1.0 1.0 ● 0.2 ■ Features ● (1.45) 0.5 4.5±0.1 0.15 For switching +0.1 0.45–0.05 Parameter Collector to base voltage Symbol UN8231 Ratings 20 VCBO UN8231A UN8231 Collector to emitter voltage UN8231A 20 1 : Emitter 2 : Collector 3 : Base MT-2 Type Package V 50 Peak collector current ICP 1.5 A Collector current IC 0.7 A PT* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Internal Connection * Printed circuit board: Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. ■ Electrical Characteristics Parameter +0.1 Unit V 60 VCEO Total power dissipation 3 (Ta=25˚C) 2.5±0.1 ■ Absolute Maximum Ratings 2.5±0.5 2 0.45–0.05 2.5±0.5 1 C R1(1kΩ) B R2 (47kΩ) E (Ta=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 15V, IE = 0 1 µA Collector cutoff current ICEO VCE = 15V, IB = 0 10 µA IEBO VEB = 14V, IC = 0 0.5 mA Emitter cutoff current Collector to base voltage UN8231 VCBO IC = 10µA, IE = 0 VCEO IC = 1mA, IB = 0 hFE* VCE = 10V, IC = 150mA Collector to emitter saturation voltage VCE(sat)* IC = 500mA, IB = 5mA Input resistance R1 Collector to emitter voltage UN8231A UN8231 UN8231A Forward current transfer ratio Resistance ratio Transition frequency R1/R2 fT VCB = 10V, IE = –50mA, f = 200MHz 20 V 60 20 V 50 800 2100 0.4 V 0.7 1 1.3 kΩ 0.016 0.021 0.025 200 MHz *Pulse measurement 1 Transistors with built-in Resistor UN8231/UN8231A PT — Ta IC — VCE 1.2 1.0 0.8 0.6 0.4 IB=1.2mA 1.0mA 0.8 0.8mA 0.6mA 0.6 0.4mA 0.4 0.2mA 0.2 0.2 0 0 40 80 120 0 160 2 hFE — IC Collector output capacitance Cob (pF) Forward current transfer ratio hFE 2000 Ta=75˚C 25˚C 1200 –25˚C 800 400 0.3 10 12 1 Collector current IC 3 (A) 10 25 20 15 10 5 0 0.1 0.3 1 3 10 30 IC/IB=100 30 10 3 1 Ta=75˚C 0.3 25˚C –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 30 VCE=10V 0.1 8 Cob — VCB 2400 0 0.01 0.03 6 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) 1600 4 Collector to emitter saturation voltage VCE(sat) (V) 1.0 Collector current IC (A) Total power dissipation PT (W) 1.4 100 Ta=25˚C Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC 1.2 1.6 100 Collector to base voltage VCB (V) 10