Transistors with built-in Resistor UN7231 Silicon NPN epitaxial planer transistor Unit: mm +0.1 0.4±0.08 +0.25 0.4max. 45° 4.0–0.20 High forward current transfer ratio hFE. Costs can be reduced through downsizing of the equipment and reduction of the number of parts. 1.0–0.2 ● 2.6±0.1 ■ Features ● 1.5±0.1 4.5±0.1 1.6±0.2 2.5±0.1 For amplification of the low frequency 0.5±0.08 1.5±0.1 0.4±0.04 3.0±0.15 3 ■ Absolute Maximum Ratings 2 1 (Ta=25˚C) marking Parameter Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 20 V Collector current IC 0.7 A Peak collector current ICP 1.5 A Total power dissipation PT* 1.0 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C 1 : Emitter 2 : Collector 3 : Base EIAJ : SC–62 Mini-Power Type Package Marking Symbol: IC Internal Connection * Printed circuit board: Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. C R1(1kΩ) B R2 (47kΩ) E ■ Electrical Characteristics Parameter Collector cutoff current (Ta=25˚C) Symbol Conditions ICBO VCB = 15V, IE = 0 min typ max Unit 1 µA ICEO VCE = 15V, IB = 0 10 µA Emitter cutoff current IEBO VEB = 14V, IC = 0 0.5 mA Collector to base voltage VCBO IC = 10µA, IE = 0 20 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Forward current transfer ratio hFE VCE = 10V, IC = 150mA* 800 Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 5mA* VCB = 20V, IE = –20mA, f = 200MHz Transition frequency fT Input resistance R1 Resistance ratio R1/R2 2100 0.4 55 0.7 1 0.016 0.021 V MHz 1.3 kΩ 0.025 *Pulse measurement 1 Transistors with built-in Resistor UN7231 PT — Ta IC — VCE 1.4 1.0 1.2 1.0 0.8 0.6 0.4 IB=1.2mA 1.0mA 0.8 0.8mA 0.6mA 0.6 0.4mA 0.4 0.2mA 0.2 0.2 0 0 40 80 120 160 0 Ambient temperature Ta (˚C) 2 6 8 10 12 Collector to emitter voltage VCE (V) hFE — IC Cob — VCB 30 2400 Collector output capacitance Cob (pF) VCE=10V Forward current transfer ratio hFE 4 2000 1600 Ta=75˚C 25˚C 1200 –25˚C 800 400 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10 25 20 15 10 5 0 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC 100 1.2 Collector current IC (A) Total power dissipation PT (W) 1.6 IC/IB=100 30 10 3 1 Ta=75˚C 0.3 25˚C –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10