InGaAs area image sensor
G13393-0909W
Image sensor with 640 × 512 pixels developed
for two-dimensional infrared imaging
The G13393-0909W has a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and backilluminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by indium
bump. The timing generator in the ROIC provides an analog video output and AD-TRIG output which are obtained by just supplying digital inputs.
The G13393-0909W has 640 × 512 pixels arrayed at a 20 μm pitch and their signals are read out from a video line. Light incident on the InGaAs photodiodes is converted into electrical signals which are then input to the ROIC through indium bumps.
Electrical signals in the ROIC are converted into voltage signals and then sequentially output from the video line by the shift
register. The G13393-0909W is hermetically sealed in a metal package together with a two-stage thermoelectric cooler to deliver stable operation.
Features
Applications
Spectral response range: 0.95 to 1.7 μm
Thermal image monitors
High sensitivity: 1 μV/e-
Hyperspectral imaging
Frame rate: 62 fps max.
Near infrared image detection
Global shutter mode
Foreign object detection
Simple operation (built-in timing generator)
Semiconductor testing
Two-stage TE-cooled type
Traffic monitoring
Structure
Parameter
Image size
Cooling
Total number of pixels
Number of effective pixels
Pixel size
Pixel pitch
Fill factor
Package
Window material
Specification
12.8 × 10.24
Two-stage TE-cooled
640 × 512 (327680)
640 × 512 (327680)
20 × 20
20
100
28-pin metal (refer to dimensional outline)
Sapphire glass with anti-reflective coating
www.hamamatsu.com
Unit
mm
pixels
pixels
μm
μm
%
-
1
InGaAs area image sensor
G13393-0909W
Block diagram
Scan
160 × 512
pixels
160 × 512
pixels
160 × 512
pixels
160 × 512
pixels
Vertical shift register
The series of operations of the readout circuit are described below.
The integration time is equal to the low period of the master start
pulse (MSP), which is a frame scan signal, and the output voltage is
sampled and held simultaneously at all pixels. Then, the pixels are
scanned, and the video is output.
The vertical shift register scans from top to bottom while sequentially selecting each row. The following operations to are performed on each pixel of the selected row.
Transfers the optical signal information sampled and held in each
pixel to the signal processing circuit as a signal voltage, and samples and holds the signal voltage.
Resets each pixel after having transferred the signal, transfers the
reset signal voltage to the signal processing circuit, and samples
and holds the reset signal voltage.
The horizontal shift register performs a sequential scan to output
the signal voltage and reset signal voltage as serial data. The offset voltage in each pixel can be eliminated by finding a difference
between the signal voltage and the reset signal voltage with a
circuit outside the sensor.
Then the vertical shift register shifts by one row to select the next
row and the operations to are repeated.
When the MSP, which is a frame scan signal, goes low after the
vertical shift register advances to the 512th row, the reset switches
for all pixels simultaneously turn off and the next frame integration
begins.
Signal processing
circuit
Horizontal shift
register
Signal
voltage
(port 1)
Signal
voltage
(port 2)
Signal
voltage
(port 3)
Signal
voltage
(port 4)
Reset
voltage
(port 1)
Reset
voltage
(port 2)
Reset
voltage
(port 3)
Reset
voltage
(port 4)
KMIRC0083EB
Absolute maximum ratings
Parameter
Supply voltage
Clock pulse voltage
Start pulse voltage
Operating temperature*1 *2
Storage temperature*2
Allowable TE cooler current
Allowable TE cooler voltage
Thermistor power dissipation
Symbol
Vdd
V(MCLK)
V(MSP)
Topr
Tstg
Ic
Vc
Pth
Value
-0.3 to +5.5
Vdd + 0.5
Vdd + 0.5
0 to +60
-20 to +70
2.8
4.0
0.2
Unit
V
V
V
°C
°C
A
V
mW
*1: Chip temperature
*2: No dew condensation
When there is a temperature difference between a product and the ambient in high humidity environment, dew condensation may
occur on the product surface. Dew condensation on the product may cause a deterioration of characteristics and reliability.
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
2
InGaAs area image sensor
G13393-0909W
Electrical and optical characteristics (Ta=25 °C, Td=15 °C, Vdd=Port_sel=Mode01=5 V, Mode02=0 V, Vb1=0.5 V, PD_bias=3 V, Vref=3 V)
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Conversion efficiency
Saturation charge
Saturation output voltage
Symbol
λ
λp
S
CE
Qsat
Vsat
Photoresponse nonuniformity*3
PRNU
Dark output
Dark current
Dark output nonuniformity
Temperature coefficient of dark output
Readout noise
Dynamic range
Defective pixels*4
VD
ID
DSNU
∆TDS
Nr
DR
-
Condition
λ=λp
Min.
0.7
0.6
Typ.
0.95 to 1.7
1.55
0.8
1
1100
1.1
Max.
-
Unit
μm
μm
A/W
μV/ekeV
-
±10
±20
%
-
0.03
0.5
±0.1
1.1
500
2200
-
0.15
2.5
±0.3
1000
0.37
V
pA
V
times/°C
μV rms
%
After subtracting
dark output,
Integration time=5 ms
Integration time=10 ms
Integration time=10 ms
Integration time=10 ms
*3: Measured at one-half of the saturation, excluding first and last pixels on each row
*4: Pixels with photoresponse nonuniformity (integration time 5 ms), dark output nonuniformity, readout noise, or dark current higher
than the maximum value (Zone 1 + 2 + 3)
[Zone definitions]
[Defective pixels in each zone]
Zone 3
Zone
512 pixels
502 pixels
Zone 1
256 pixels
Zone 2
Maximum number Percentage of
of defective pixels defective pixels
1
2
3
164
469
571
1+2
1+2+3
633
1204
0.2%
0.2%
5.0%
0.2%
0.37%
320 pixels
630 pixels
640 pixels
[Consecutive defective pixels]
The number of consecutive adjacent defect pixels is less than 16.
KMIRC0087EA
Electrical characteristics (Ta=25 °C)
Parameter
Supply voltage
Supply current*5
Ground
Element bias
Element bias current
Pixel bias voltage
Video reference voltage
High
Video output voltage
(VIDEO_S)
Low
Video output voltage (VIDEO_R)
Clock frequency
Video data rate
Thermistor resistance
Symbol
Vdd
I(Vdd)
Vss
PD_bias
I(PD_bias)
Vb1
Vref
VsH
VsL
VR
f
fV
Rth
Min.
4.9
2.9
0.4
2.9
3.6
2.8
2.8
8.2
Typ.
5
70
0
3.0
0.5
3.0
4.0
2.9
2.9
f/4
9
Max.
5.1
140
3.1
1
0.6
3.1
4.1
3.0
3.0
25
9.8
Unit
V
mA
V
V
mA
V
V
V
V
MHz
MHz
kΩ
3
InGaAs area image sensor
G13393-0909W
Equivalent circuit
Whole image sensor
THERM
THERM
Thermistor
One pixel
Reset switch
Vb1
Shift register
0.1 μF
Sample and hold switch
VIDEO_S
Photodiode
Cf
VIDEO_R
Two-stage
TE-cooler
PD_bias
Timing
generator
AD_Trig
Vdd Vss Vref TE(+) TE(-) MCLK MSP Mode 1 Mode 2 Port_sel
External input
KMIRC0072ED
4
InGaAs area image sensor
G13393-0909W
Connection example
Power supply for
digital buffer (D)
GND +5 V
Power supply for
analog buffer (A)
GND -15 V +15 V
Power supply
for sensor drive
GND +5 V
Temperature
control
circuit
+15 V(A)
VIDEO_S
(signal output)
B1
-15 V(A)
+15 V(A)
VIDEO_R
(reset signal output)
AD_Trig
(output for A/D conversion)
Vb1
Vdd
B1
Vref
-15 V(A)
+5 V(D)
R1
VR1
C2
G13393-0909W
PD_bias
B2
+5 V(D)
B2
MSP (input)
B2
Mode 1 (input)
B2
Mode 2 (input)
B2
Port_sel (input)
B2
VR1
C2
C1
MCLK (input)
VR1
C2
TE(+)
TE(-)
THERM
THERM
+5 V(D)
+5 V(D)
+5 V(D)
+5 V(D)
Measurement board
(Reference) Parameter values (Reference) Buffer
Symbol
Value
R1
10 Ω
Symbol
B1
IC
AD847
VR1
10 kΩ
B2
TC74HCT541
C1
330 pF
C2
0.1 μF
KMIRC0070EE
5
InGaAs area image sensor
G13393-0909W
Timing chart
The video output from a single pixel is equal to 4 MCLK (master clock) pulses. The MSP (master start pulse) is a signal for setting the
integration time, so making the low (0 V) period of the MSP longer will extend the integration time. The MSP also functions as a signal
that triggers each control signal to perform frame scan. When the MSP goes from low (0 V) to high (5 V), each control signal starts on
the falling edge of the MCLK and frame scan is performed during the high period of the MSP. The low (0 V) period of the MSP serves as
the integration time. The timing charts when operated at a MCLK frequency of 25 MHz are shown below.
Number of readout ports: 4
tr(MCLK)
tf(MCLK)
tpw(MCLK)
t1
tr(MSP)
t2
tf(MSP)
t3
tpw(MSP)
Integration time
One frame scanning period [(512 rows × 160 columns × 0.16 μs) (including blank)]
MCLK
(input)
MSP
(input)
AD_TRIG
(output)
VIDEO_S
(output)
VIDEO_R
(output)
MSP low
period*1 5.76 μs 0.16 μs 0.16 μs 5.76 μs 0.16 μs 0.16 μs 5.76 μs 0.16 μs 0.16 μs
(Blank period)*2 (1-1 ch) (1-160 ch) (Blank period) (2-1 ch) (2-160 ch) (Blank period) (3-1 ch) (3-160 ch)
MSP low
0.16 μs 0.24 μs*3 period*1 5.76 μs 0.16 μs 0.16 μs 5.76 μs
(512-160 ch) (Blank period)
(Blank period) (1-1 ch) (1-160 ch) (Blank period)
AD_TRIG
Dummy (1 clock)
VIDEO_S
VIDEO_R
0.16 μs 0.16 μs
5.76 μs
0.16 μs 0.16 μs
n - 159 ch n - 160 ch Blank period between rows (n + 1) - 1 ch
*1: The minimum number of MCLK pulses during the MSP low period is 25. The integration time can be changed by adjusting the MSP
low period.
Integration time = MSP low period
*2: There is a blank of 5.76 μs between each row.
*3: The blank period after scanning the last channel is 0.24 μs.
KMIRC0085EB
Parameter
Clock pulse voltage
Symbol
High
Low
tr(MCLK)
tf(MCLK)
tpw(MCLK)
Clock pulse rise/fall times
Clock pulse width
Start pulse voltage
Start pulse rise/fall times
Start pulse width
Reset (rise) timing*5
Reset (fall) timing*5
Output settling time
V(MCLK)
High
Low
V(MSP)
tr(MSP)
tf(MSP)
tpw(MSP)
t1
t2
t3
Min.
Vdd - 0.5
0
Typ.
Vdd
0
Max.
Vdd + 0.5
0.5
Unit
V
V
0
10
12
ns
10
Vdd - 0.5
0
Vdd
0
Vdd + 0.5
0.5
ns
V
V
0
10
12
ns
0.001
10
10
-
-
10
50
ms
ns
ns
ns
*5: Setting these timings shorter than the minimum value may delay the operation by one MCLK pulse and cause malfunction.
6
InGaAs area image sensor
G13393-0909W
Operation mode selection
Terminal name
Pin no.
Port_sel
24
Mode2
Mode1
25
27
Input
Description
To enable the setting for reading from all ports, apply a fixed voltage of
High=5 V (Vdd)
High=5 V (Vdd).
Low=0 V (Vss) To operate the sensor in global shutter mode, apply the fixed voltage indicated
High=5 V (Vdd) on the left.
Spectral response
Photosensitivity temperature characteristics
(Typ. Td=25 °C)
1.0
(Typ.)
100
Td=60 °C
90
80
Relative sensitivity (%)
Photosensitivity (A/W)
0.8
0.6
0.4
Td=40 °C
70
60
Td=20 °C
50
40
30
Td=-10 °C
20
0.2
10
0
0.8
1.0
1.2
1.4
1.6
1.8
0
1.55
1.65
1.60
1.70
1.75
Wavelength (μm)
Wavelength (μm)
KMIRB0079EA
Note: chip temperature
KMIRB0072EB
7
InGaAs area image sensor
G13393-0909W
Specifications of built-in TE-cooler (Typ. vacuum condition)
Parameter
Internal resistance
Maximum heat absorption of built-in TE-cooler*6 *7
Symbol
Condition
Rint Ta=25 °C
Qmax
Specification
0.9 ± 0.15
8.4
Unit
Ω
W
*6: This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the maximum
current is supplied to the sensor.
*7: Heat absorption at Tc=Th
Tc: Temperature on the cooling side of TE-cooler
Th: Temperature on the heat dissipating side of TE-cooler.
Thermistor temperature characteristics
Cooling characteristics of TE-cooler
(Typ.)
45
40
(Typ. Ta=25 °C, thermal resistance of heatsink 0.8 °C/W)
35
40
Element temperature (°C)
Thermistor resistance (kΩ)
30
35
30
25
20
15
10
20
15
10
5
0
-5
-10
-15
5
0
-20 -10
25
-20
-25
0
10
20
30
40
50
60
70
Temperature (°C)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
Current (A)
KMIRB0067EB
KMIRB0088EB
There is the following relation between the thermistor resistance
and temperature (°C).
R1 = R2 × exp B {1/(T1 + 273.15) - 1/(T2 + 273.15)}
R1: resistance at T1 (°C)
R2: resistance at T2 (°C)
B: B constant (B=3410 K ± 2%)
Thermistor resistance=9 kΩ (at 25 °C)
8
InGaAs area image sensor
G13393-0909W
Current vs. voltage characteristics of TE-cooler
2.8
(Typ. Ta=25 °C, thermal resistance of heatsink 0.8 °C/W)
2.6
2.4
2.2
2.0
Current (A)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1
2
3
Voltage (V)
KMIRB0089EB
Dimensional outline (unit: mm)
46.0 ± 0.15
44.4 ± 0.15
38.1 ± 0.15
19.1 ± 0.3
R0.5 ± 0.15
17.5 ± 0.2
15
17.5 ± 0.2
10.2 ± 0.15
1 2
Photosensitive area 12.8 × 10.24
14
R1.65 ± 0.15
19.1 ± 0.3
6.4 ± 0.1
1.5 ± 0.2
5.5 ± 0.3
11.2 ± 0.3
0.6 ± 0.1
Index mark
1.4 ± 0.3
22.9 ± 0.15
25.4 ± 0.15
28
(28 ×)2.54
(28 ×) ϕ0.46
20.3 ± 0.15
KMIRA0032EA
9
InGaAs area image sensor
G13393-0909W
Pin connections
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
Name
PD_bias
Vb1
TE(+)
NC
Vref
VIDEO-S1
VIDEO-R1
Vss
VIDEO-S2
VIDEO-R2
VIDEO-S3
VIDEO-R3
VIDEO-S4
VIDEO-R4
Vdd
THERM
THERM
D_Vdd
NC
AD_Trig
MSP
MCLK
D_Vdd
Port_sel
Mode2
TE(-)
Mode1
NC
Input/output
Input
Input
Input
Input
Output
Output
Input
Output
Output
Output
Output
Output
Output
Input
Output
Output
Input
Output
Input
Input
Input
Input
Input
Input
Input
-
Function
Photodiode bias voltage
Pixel bias voltage
Thermoelectric cooler (+)
Video reference voltage
Video output after integration (port 1)
Video output after reset (port 1)
0 V ground
Video output after integration (port 2)
Video output after reset (port 2)
Video output after integration (port 3)
Video output after reset (port 3)
Video output after integration (port 4)
Video output after reset (port 4)
+5 V power supply
Thermistor
Thermistor
+5 V power supply (digital)
A/D sampling signal
Frame scan start pule
Control pulse for timing generator
+5 V power supply (digital)
Readout port
Operation mode 2
Thermoelectric cooler (-)
Operation mode 1
-
Remarks
3.0 V
0.5 V
3.0 V
2.9 to 4.0
2.9 V typ.
0V
2.9 to 4.0
2.9 V typ.
2.9 to 4.0
2.9 V typ.
2.9 to 4.0
2.9 V typ.
5V
V typ.
V typ.
V typ.
V typ.
5V
Synchronized with falling edge
Synchronized with falling edge
5V
Fixed at 5 V
Fixed at 0 V
Fixed at 5 V
Do not ground.
10
InGaAs area image sensor
G13393-0909W
Precautions
(1) Electrostatic countermeasures
This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic
charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment.
(2) Incident window
If there is dust or stain on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the
window surface with dry cloth, dry cotton swab or the like, since doing so may generate static electricity. Use soft cloth, paper or a cotton swab moistened with alcohol to wipe dust and stain off the window surface. Then blow compressed air onto the window surface so
that no spot or stain remains.
(3) Soldering
To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering
should be performed within 10 seconds at a soldering temperature below 260 °C.
(4) Operating and storage environments
Handle the device within the temperature range specified in the absolute maximum ratings. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided.
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Image sensors
Information described in this material is current as of October, 2015.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
11
Cat. No. KMIR1027E01 Oct. 2015 DN