VS-ETF075Y60U www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 75 A FEATURES • Trench IGBT technology • FRED Pt® clamping diodes • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance • Short circuit rated • Square RBSOA • Integrated thermistor • Low internal inductances EMIPAK-2B (package example) • Low switching loss • PressFit pins locking technology. Patent # US.263.820 B2 • UL approved file E78996 PRODUCT SUMMARY • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Q1 - Q4 IGBT STAGE VCES 600 V VCE(ON) typical at IC = 75 A 1.7 V IC at TC = 89 °C 75 A DESCRIPTION Q2 - Q3 IGBT STAGE VCES 600 V VCE(ON) typical at IC = 75 A 1.56 V IC at TC = 122 °C 75 A Speed 8 kHz to 30 kHz Package EMIPAK-2B Circuit 3-levels half bridge inverter stage VS-ETF075Y60U is an integrated solution for a multi level inverter stage in a single package. The EMIPAK-2B package is easy to use thanks to the PressFit pins and the exposed substrate provides improved thermal performance. The optimized layout also helps to minimize stray parameters, allowing for better EMI performance. ABSOLUTE MAXIMUM RATINGS PARAMETER Operating junction temperature SYMBOL TEST CONDITIONS MAX. TJ 175 Storage temperature range TStg -40 to +150 RMS isolation voltage VISOL TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s 3500 UNITS °C V Q1 - Q4 IGBT Collector to emitter voltage VCES 600 Gate to emitter voltage VGES 20 Pulsed collector current ICM 200 Clamped inductive load current ILM (1) 200 TC = 25 °C Continuous collector current Power dissipation IC PD V A 109 TC = 80 °C 80 TSINK = 80 °C 40 TC = 25 °C 294 TC = 80 °C 186 A W PATENT(S): www.vishay.com/patents This Vishay product is protected by one or more United States and International patents. Revision: 16-Jun-16 Document Number: 94685 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Q2 - Q3 IGBT Collector to emitter voltage VCES 600 Gate to emitter voltage VGES 20 Pulsed collector current ICM 250 Clamped inductive load current Continuous collector current Power dissipation ILM (1) IC PD 250 TC = 25 °C 154 TC = 80 °C 113 TSINK = 80 °C 50 TC = 25 °C 405 TC = 80 °C 257 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 270 TC = 25 °C 78 TC = 80 °C 55 V A A W D5 - D6 CLAMPING DIODE Repetitive peak reverse voltage VRRM Single pulse forward current IFSM Diode continuous forward current Power dissipation IF PD 600 TSINK = 80 °C 28 TC = 25 °C 174 TC = 80 °C 110 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 250 TC = 25 °C 72 TC = 80 °C 70 V A W D1 - D2 - D3 - D4 AP DIODE Single pulse forward current Diode continuous forward current Power dissipation IFSM IF PD TSINK = 80 °C 31 TC = 25 °C 107 TC = 80 °C 68 A W Notes • Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (1) V CC = 300 V, VGE = 15 V, L = 500 μH, Rg = 4.7 , TJ = 175 °C Revision: 16-Jun-16 Document Number: 94685 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS V Q1 - Q4 IGBT Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage BVCES VCE(ON) VGE(th) VGE(th)/TJ VGE = 0 V, IC = 100 μA 600 - - VGE = 15 V, IC = 60 A - 1.57 1.8 VGE = 15 V, IC = 75 A - 1.7 1.93 VGE = 15 V, IC = 60 A, TJ = 125 °C - 1.7 - VGE = 15 V, IC = 75 A, TJ = 125 °C - 1.86 - 3.6 5.6 7.1 - -12 - mV/°C VCE = VGE, IC = 2.1 mA VCE = VGE, IC = 1 mA (25 °C to 125 °C) V Forward transconductance gfe VCE = 20 V, IC = 75 A - 51 - S Transfer characteristics VGE VCE = 20 V, IC = 75 A - 9.6 - V Zero gate voltage collector current ICES VGE = 0 V, VCE = 600 V - 0.0002 0.1 VGE = 0 V, VCE = 600 V, TJ = 125 °C - 0.01 - Gate to emitter leakage current IGES VGE = ± 20 V, VCE = 0 V - - ± 200 nA BVCES VGE = 0 V, IC = 500 μA 600 - - V - 1.45 1.62 mA Q2 - Q3 IGBT Collector to emitter breakdown voltage VGE = 15 V, IC = 60 A Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage VCE(ON) VGE(th) VGE(th)/TJ VGE = 15 V, IC = 75 A - 1.56 1.73 VGE = 15 V, IC = 60 A, TJ = 125 °C - 1.52 - VGE = 15 V, IC = 75 A, TJ = 125 °C - 1.67 - 3.6 5.3 7.1 VCE = VGE, IC = 1.4 mA (25 °C to 125 °C) - -18 - mV/°C VCE = VGE, IC = 5.6 mA V Forward transconductance gfe VCE = 20 V, IC = 75 A - 72 - S Transfer characteristics VGE VCE = 20 V, IC = 75 A - 8.3 - V Zero gate voltage collector current ICES VGE = 0 V, VCE = 600 V - 0.0005 0.1 VGE = 0 V, VCE = 600 V, TJ = 125 °C - 0.065 - Gate to emitter leakage current IGES VGE = ± 20 V, VCE = 0 V - - ± 400 VBR IR = 100 μA mA nA D5 - D6 CLAMPING DIODE Cathode to anode blocking voltage Forward voltage drop Reverse leakage current VFM IRM IF = 40 A 600 - - - 1.83 2.35 IF = 40 A, TJ = 125 °C - 1.51 - VR = 600 V - 0.0002 0.1 VR = 600 V, TJ = 125 °C - 0.028 - IF = 30 A - 1.2 1.41 IF = 30 A, TJ = 125 °C - 1.06 - V mA D1 - D2 - D3 - D4 AP DIODE Forward voltage drop VFM V Revision: 16-Jun-16 Document Number: 94685 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Q1 - Q4 IGBT (WITH D5 - D6 CLAMPING DIODE) Total gate charge (turn-on) Qg IC = 75 A - 150 - Gate to emitter charge (turn-on) Qge VCC = 400 V - 40 - Gate to collector charge (turn-on) Qgc VGE = 15 V - 60 - Turn-on switching loss EON - 0.94 Turn-off switching loss EOFF - 1.1 - Total switching loss ETOT - 2.04 - Turn-on delay time td(on) - 78 - - 72 - - 101 - Rise time Turn-off delay time Fall time tr td(off) IC = 75 A VCC = 300 V VGE = 15 V Rg = 4.7 L = 500 μH (1) tf - 65 - Turn-on switching loss EON - 1.13 - Turn-off switching loss EOFF - 1.61 - Total switching loss ETOT - 2.74 - Turn-on delay time td(on) - 78 - - 72 - - 106 - - 107 - - 4440 - 245 - 130 Rise time Turn-off delay time Fall time tr td(off) IC = 75 A VCC = 300 V VGE = 15 V Rg = 4.7 L = 500 μH TJ = 125 °C (1) tf Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres VGE = 0 V VCC = 30 V f = 1 MHz Reverse bias safe operating area RBSOA TJ = 175 °C, IC = 200 A,VCC = 300 V, VP = 600 V, Rg = 4.7 , VGE = 15 V to 0 V Short circuit safe operating area SCSOA Rg = 10 , VCC = 400 V, VP = 600 V VGE = 15 V to 0 nC mJ ns mJ ns pF Fullsquare - - 5 μs Q2 - Q3 IGBT (WITH FREEWHEELING EXTERNAL TO-247 DIODE DISCRETE 30ETH06) Total gate charge (turn-on) Qg IC = 120 A - 240 - Gate to emitter charge (turn-on) Qge VCC = 400 V - 69 - Gate to collector charge (turn-on) Qgc VGE = 15 V - 90 - Turn-on switching loss EON - 0.85 - Turn-off switching loss EOFF IC = 75 A - 1.54 - Total switching loss ETOT VCC = 300 V - 2.39 - Turn-on delay time td(on) VGE = 15 V Rg = 4.7 L = 500 μH (1) - 111 - Rise time Turn-off delay time Fall time tr td(off) - 81 - - 130 - tf - 74 Turn-on switching loss EON - 1.0 - Turn-off switching loss EOFF - 1.83 - Total switching loss ETOT - 2.83 - Turn-on delay time td(on) IC = 75 A VCC = 300 V VGE = 15 V Rg = 4.7 L = 500 μH TJ = 125 °C (1) - 111 - - 83 - - 140 - - 104 - VGE = 0 V VCC = 30 V f = 1 MHz - 7750 - - 550 - - 225 - Rise time Turn-off delay time Fall time tr td(off) tf Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Reverse bias safe operating area RBSOA TJ = 175 °C, IC = 250 A, VCC = 300 V, VP = 600 V, Rg = 4.7 , VGE = 15 V to 0 V Short circuit safe operating area SCSOA Rg = 10 , VCC = 400 V, VP = 600 V VGE = 15 V to 0 nC mJ ns mJ ns pF Fullsquare - - 5 μs Revision: 16-Jun-16 Document Number: 94685 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS ns D5 - D6 CLAMPING DIODE Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr VR = 200 V IF = 50 A dl/dt = 500 A/μs - 59 - - 8.5 - A - 257 - nC VR = 200 V IF = 50 A dl/dt = 500 A/μs, TJ = 125 °C - 110 - ns - 18.5 - A - 1020 - nC VR = 200 V IF = 50 A dl/dt = 500 A/μs - 108 - ns - 19.5 - A - 1062 - nC VR = 200 V IF = 50 A dl/dt = 500 A/μs, TJ = 125 °C - 174 - ns - 31 - A - 2716 - nC D1 - D2 - D3 - D4 AP DIODE Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Note (1) Energy losses include “tail” and diode reverse recovery. INTERNAL NTC - THERMISTOR SPECIFICATIONS PARAMETER VALUE UNITS R25 TC = 25 °C 5000 R100 TC = 100 °C 493 ± 5 % R2 = R25 exp. [B25/50 (1/T2 - 1/(298.15 K))] 3375 ± 5 % K 220 °C Dissipation constant 2 mW/°C Thermal time constant 8 s Resistance B-value SYMBOL B25/50 TEST CONDITIONS Maximum operating temperature THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Q1 - Q4 IGBT - Junction to case thermal resistance (per switch) Q2 - Q3 IGBT - Junction to case thermal resistance (per switch) D5 - D6 Clamping diode - Junction to case thermal resistance (per diode) RthJC MIN. TYP. MAX. - - 0.51 - - 0.37 - - 0.86 D1 - D2 - D3 - D4 AP diode - Junction to case thermal resistance (per diode) - - 1.4 Q1 - Q4 IGBT - Case to sink thermal resistance (per switch) - 0.84 - Q2 - Q3 IGBT - Case to sink thermal resistance (per switch) UNITS °C/W - 0.8 - - 1.16 - D1 - D2 - D3 - D4 AP diode - Case to sink thermal resistance (per diode) - 1.12 - Case to sink thermal resistance per module - 0.1 - °C/W Mounting torque (M4) 2 - 3 Nm Weight - 45 - g D5 - D6 Clamping diode - Case to sink thermal resistance (per diode) RthCS (1) Note (1) Mounting surface flat, smooth, and greased Revision: 16-Jun-16 Document Number: 94685 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors 150 80 VCE = 20 V TJ = 25 °C 135 70 120 60 105 75 60 IC (A) IC (A) 50 TJ = 125 °C TJ = 150 °C TJ = 175 °C 90 40 TJ = 125 °C 30 45 TJ = 25 °C 20 30 10 15 0 0 0 0.5 1 1.5 2 2.5 3 4 3.5 5 6 7 8 9 11 12 VCE (V) VGE (V) Fig. 1 - Typical Q1 - Q4 Trench IGBT Output Characteristics VGE = 15 V Fig. 4 - Typical Q1 - Q4 Trench IGBT Transfer Characteristics 6.5 150 135 6 120 TJ = 25 °C 5.5 105 VGE = 18 V VGE = 15 V VGE = 12 V 75 5 VGEth (V) 90 IC (A) 10 60 45 TJ = 125 °C 4.5 4 VGE = 9 V 30 3.5 15 3 0 0 0.5 1 1.5 2 2.5 3 0.2 3.5 0.6 0.8 1 1.2 1.4 1.6 VCE (V) IC (mA) Fig. 2 - Typical Q1 - Q4 Trench IGBT Output Characteristics TJ = 125 °C Fig. 5 - Typical Q1 - Q4 Trench IGBT Gate Threshold Voltage 180 10 160 1 TJ = 175 °C 0.1 TJ = 150 °C 140 120 DC 100 ICES (mA) Allowable Case Temperature (°C) 0.4 80 60 TJ = 125 °C 0.01 0.001 TJ = 25 °C 40 0.0001 20 0 0 20 40 60 80 100 120 IC - Continuous Collector Current (A) Fig. 3 - Maximum Q1 - Q4 Trench IGBT Continuous Collector Current vs. Case Temperature 0.00001 100 200 300 400 500 600 VCES (V) Fig. 6 - Typical Q1 - Q4 Trench IGBT Zero Gate Voltage Collector Current Revision: 16-Jun-16 Document Number: 94685 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors 1000 2 1.8 tdon Switching time (ns) 1.6 Energy (mJ) 1.4 Eoff 1.2 1 0.8 Eon 0.6 0.4 tdoff 100 tf tr 0.2 0 10 0 10 20 30 40 50 60 70 0 80 5 10 15 20 25 30 35 40 45 50 IC (A) Rg (Ω) Fig. 7 - Typical Q1 - Q4 Trench IGBT Energy Loss vs. IC (with D5 - D6 Clamping Diode) TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH Fig. 10 - Typical Q1 - Q4 Trench IGBT Switching Time vs. Rg (with D5 - D6 Clamping Diode) TJ = 125 °C, VCC = 300 V, IC = 75 A, VGE = 15 V, L = 500 μH 1000 150 TJ = 175 °C 120 TJ = 150 °C 105 tf tdoff 90 IF (A) Switching time (ns) 135 100 tdon 75 60 TJ = 25 °C 45 TJ = 125 °C 30 tr 15 0 10 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 Fig. 8 - Typical Q1 - Q4 Trench IGBT Switching Loss vs. IC (with D5 - D6 Clamping Diode) TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH 3 3.5 Fig. 11 - Typical D5 - D6 Clamping Diode Forward Characteristics Allowable Case Temperature (°C) 2.4 2.2 2 Energy (mJ) 2.5 VFM (V) IC (A) 1.8 Eoff 1.6 1.4 Eon 1.2 2 1 0.8 180 160 140 120 100 80 60 40 20 0 0 5 10 15 20 25 30 35 40 45 50 0 10 20 30 40 50 60 70 80 90 Rg (Ω) IF - Continuous Forward Current (A) Fig. 9 - Typical Q1 - Q4 Trench IGBT Energy Loss vs. Rg (with D5 - D6 Clamping Diode) TJ = 125 °C, VCC = 300 V, IC = 75 A, VGE = 15 V, L = 500 μH Fig. 12 - Maximum D5 - D6 Clamping Diode Forward Current vs. Case Temperature Revision: 16-Jun-16 Document Number: 94685 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors 10 22 175 °C 20 1 16 125 °C 14 IRR (A) 0.1 IRRM (A) 125 °C 18 150 °C 0.01 12 10 25 °C 8 0.001 6 25 °C 4 0.0001 2 0.00001 100 0 200 300 400 500 100 600 200 300 400 500 VR (V) dIFdt (A/μs) Fig. 13 - Typical D5 - D6 Clamping Diode Reverse Leakage Current Fig. 15 - Typical D5 - D6 Clamping Diode Reverse Recovery Current vs. dIF/dt, Vrr = 200 V, IF = 50 A 170 1200 150 1000 130 800 Qrr (nC) 125 °C trr (ns) 125 °C 110 90 600 400 70 25 °C 200 25 °C 50 30 0 100 200 300 400 100 500 200 300 400 500 dIFdt (A/μs) dIFdt (A/μs) Fig. 14 - Typical D5 - D6 Clamping Diode Reverse Recovery Time vs. dIF/dt, Vrr = 200 V, IF = 50 A Fig. 16 - Typical D5 - D6 Clamping Diode Reverse Recovery Charge vs. dIF/dt, Vrr = 200 V, IF = 50 A ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.1 0.5 0.2 0.1 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Q1 - Q4 Trench IGBT) Revision: 16-Jun-16 Document Number: 94685 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.1 0.5 0.2 0.1 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics (D5 - D6 Clamping Diode) Allowable Case Temperature (°C) 150 TJ = 25 °C 135 120 105 TJ = 125 °C TJ = 150 °C TJ = 175 °C IC (A) 90 75 60 45 30 15 0 180 160 140 120 DC 100 80 60 40 20 0 0 0.5 1 1.5 2 2.5 3 0 VCE (V) 40 60 80 100 120 140 160 IC - Continuous Collector Current (A) Fig. 21 - Maximum Q2 - Q3 Trench IGBT Continuous Collector Current vs. Case Temperature Fig. 19 - Typical Q2 - Q3 Trench IGBT Output Characteristics VGE = 15 V 80 150 135 120 VGE = 18 V VGE = 15 V 105 VGE = 12 V 90 VGE = 9 V VCE = 20 V 70 60 ICE (A) IC (A) 20 75 60 TJ = 125 °C 50 TJ = 25 °C 40 30 45 20 30 10 15 0 0 0 0.5 1 1.5 2 2.5 3 VCE (V) Fig. 20 - Typical Q2 - Q3 Trench IGBT Output Characteristics TJ = 125 °C 4 5 6 7 8 9 10 11 VGE (V) Fig. 22 - Typical Q2 - Q3 Trench IGBT Transfer Characteristics Revision: 16-Jun-16 Document Number: 94685 9 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors 6.5 1000 6 TJ = 25 °C tf Switching Time (ns) 5.5 VGEth (V) 5 4.5 4 3.5 TJ = 125 °C 3 tdoff 100 tdon tr 2.5 10 2 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5.5 6 10 20 30 40 50 60 70 80 IC (mA) IC (A) Fig. 23 - Typical Q2 - Q3 Trench IGBT Gate Threshold Voltage Fig. 26 - Typical Q2 - Q3 Trench IGBT Switching Time vs. IC (with Freewheeling External TO-247 Diode Discrete 30ETH06), TJ = 125 °C, VCC = 300 V, Rg = 4.7 VGE= 15 V, L = 500 μH 2.8 10 ICES (mA) 0.1 2.6 TJ = 150 °C 2.4 TJ = 125 °C 2.2 Energy (mJ) 1 TJ = 175 °C 0.01 0.001 TJ = 25 °C 2 Eoff 1.8 1.6 1.4 1.2 0.0001 Eon 1 0.8 0.00001 100 200 300 400 500 0 600 5 10 15 20 25 30 35 40 45 50 VCES (V) Rg (Ω) Fig. 24 - Typical Q2 - Q3 Trench IGBT Zero Gate Voltage Collector Current Fig. 27 - Typical Q2 - Q3 Trench IGBT Energy Loss vs. Rg (with Freewheeling External TO-247 Diode Discrete 30ETH06), TJ = 125 °C, VCC = 300 V, IC = 75 A, VGE = 15 V, L = 500 μH 2 1000 tdon 1.8 Switching Time (ns) 1.6 Energy (mJ) 1.4 Eoff 1.2 1 0.8 0.6 Eon 0.4 tdoff tr 100 tf 0.2 0 0 10 20 30 40 50 60 70 80 IC (A) Fig. 25 - Typical Q2 - Q3 Trench IGBT Energy Loss vs. IC (with Freewheeling External TO-247 Diode Discrete 30ETH06), TJ = 125 °C, VCC = 300 V, Rg = 4.7 VGE = 15 V, L = 500 μH 10 0 5 10 15 20 25 30 35 40 45 50 55 Rg (Ω) Fig. 28 - Typical Q2 - Q3 Trench IGBT Switching Time vs. Rg (with Freewheeling External TO-247 Diode Discrete 30ETH06), TJ = 125 °C, VCC = 300 V, IC = 75 A, VGE = 15 V, L = 500 μH Revision: 16-Jun-16 Document Number: 94685 10 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors 250 150 135 230 120 210 105 trr (ns) IF (A) 125 °C 190 90 75 TJ = 150 °C 170 150 60 TJ = 25 °C TJ = 175 °C 45 30 130 25 °C TJ = 125 °C 110 15 90 0 100 0 0.4 0.8 1.2 1.6 2 300 400 500 dIFdt (A/μs) VFM (V) Fig. 31 - Typical D1 - D2 - D3 - D4 Antiparallel Diode Reverse Recovery Time vs. dIF/dt Vrr = 200 V, IF = 50 A Fig. 29 - Typical D1 - D2 - D3 - D4 Antiparallel Diode Forward Characteristics 35 180 160 30 125 °C 140 25 DC 120 Irr (A) Allowable Case Temperature (°C) 200 2.4 100 80 20 25 °C 15 60 10 40 5 20 0 100 0 0 10 20 30 40 50 60 70 80 200 300 400 500 IF - Continuous Forward Current (A) dIF/dt (A/us) Fig. 30 - Maximum D1 - D2 - D3 - D4 Antiparallel Diode Forward Current vs. Case Temperature Fig. 32 - Typical D1 - D2 - D3 - D4 Antiparallel Diode Reverse Recovery Current vs. dIF/dt Vrr = 200 V, IF = 50 A 3000 2700 125 °C 2400 Qrr (nC) 2100 1800 1500 1200 25 °C 900 600 300 100 200 300 400 500 dIFdt (A/μs) Fig. 33 - Typical D1 - D2 - D3 - D4 Antiparallel Diode Reverse Recovery Charge vs. dIF/dt Vrr = 200 V, IF = 50 A Revision: 16-Jun-16 Document Number: 94685 11 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.1 0.5 0.2 0.1 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 34 - Maximum Thermal Impedance ZthJC Characteristics (Q2 - Q3 Trench IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.1 0.5 0.2 0.1 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 35 - Maximum Thermal Impedance ZthJC Characteristics (D1 - D2 - D3 - D4 Antiparallel Diode) ORDERING INFORMATION TABLE Device code VS- ET F 075 Y 60 U 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Package indicator (ET = EMIPAK-2B) 3 - Circuit configuration (F = 3-levels half-bridge inverter stage) 4 - Current rating (075 = 75 A) 5 - Switch die technology (Y = trench IGBT) 6 - Voltage rating (60 = 600 V) 7 - Diode die technology (U = ultrafast diode) Revision: 16-Jun-16 Document Number: 94685 12 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ETF075Y60U www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION 1 1 1 1 1 Q1 D1 5 D5 6 Q2 D2 2 2 2 2 2 2 2 7 8 Q3 D3 9 4 4 4 4 4 4 D6 10 Q4 D4 11 13 12 Ntc 14 3 3 3 3 3 PACKAGE 24 24 20.8 20.8 17.6 14.4 14.4 11.2 8 8 4.8 4.8 1.6 1.6 9.6 16 12.8 9 10 2 2 2 2 2 2 2 7 2 8 13 6 14 9.6 3.2 12.8 16 5 4 12 11 3 3 3 3 3 4 4 1 4 4 1 1 1 1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95559 Revision: 16-Jun-16 Document Number: 94685 13 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit 3 ± 0.15 12 ± 0.35 4.3 ± 0.3 DIMENSIONS in millimeters 56.8 ± 0.3 52.7 ± 0.5 51 ± 0.15 20.4 Ø 16.6 4.4 ±0 16 16 12.8 9.6 9.6 12.8 6.4 3.2 6.4 37 ± 0.5 42.5 ± 0.15 53 ± 0.15 62.8 ± 0.3 3.2 .1 1.6 Pin position 4.8 0.4 1.6 4.8 8 11.2 14.4 17.6 20.8 24 Revision: 25-Jun-14 8 11.2 14.4 17.6 20.8 24 Document Number: 95559 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000