Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planer type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA719 and 2SA720 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.2 ■ Features 0.7±0.1 13.5±0.5 • Low collector to emitter saturation voltage VCE(sat) • Complementary pair with 2SA719 and 2SA720 ■ Absolute Maximum Ratings Ta = 25°C Symbol Collector to base voltage 2SC1317 Collector to emitter voltage 2SC1317 VCBO 2SC1318 Rating Unit 30 V 0.45+0.15 –0.1 0.45+0.15 –0.1 (1.27) (1.27) 60 VCEO 25 2SC1318 V 50 123 2.3±0.2 Parameter 2.54±0.15 Emitter to base voltage VEBO 7 V Peak collector current ICP 1 A Collector current IC 500 mA Collector power dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1: Emitter 2: Collector 3: Base TO-92 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector cutoff current Collector to base voltage 2SC1317 Collector to emitter voltage 2SC1317 Conditions ICBO VCB = 20 V, IE = 0 VCBO IC = 10 µA, IE = 0 2SC1318 Min Unit 0.1 µA 30 VCEO IC = 10 mA, IB = 0 V 25 V 50 Emitter to base voltage VEBO IE = 10 µA, IC = 0 7 Forward current transfer ratio *1 hFE1 *2 VCE = 10 V, IC = 150 mA 85 40 hFE2 VCE = 10 V, IC = 500 mA Collector to emitter saturation voltage *1 VCE(sat) IC = 300 mA, IB = 30 mA Base to emitter saturation voltage *1 VBE(sat) fT Collector output capacitance Max 60 2SC1318 Transition frequency Typ Cob V 340 0.35 0.6 IC = 300 mA, IB = 30 mA 1.1 1.5 VCB = 10 V, IE = −50 mA, f = 200 MHz 200 VCB = 10 V, IE = 0, f = 1 MHz 6 V V MHz 15 pF Note) *1: Pulse measurement *2: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 1 2SC1317, 2SC1318 Transistors IC VCE 700 700 600 500 400 300 200 Ta = 25°C 500 4 mA 400 3 mA 300 2 mA 200 1 mA 60 0 80 100 120 140 160 Ambient temperature Ta (°C) 2 4 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 10 3 Ta = 75°C 25°C −25°C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 10 25°C Ta = 75°C 1 −25°C 0.3 0.1 3 160 120 80 40 −20−30 −50 −100 Emitter current IE (mA) 5 6 7 8 9 10 VCE = 10 V 250 Ta = 75°C 200 25°C 150 −25°C 100 50 0.01 0.01 0.03 0.1 0.3 1 3 0 0.01 0.03 10 Collector current IC (A) 6 4 2 2 3 5 10 3 10 IC = 2 mA Ta = 25°C 100 80 60 2SC1318 40 2SC1317 20 0 1 1 VCER RBE 8 0 0.3 120 IE = 0 f = 1 MHz Ta = 25°C 10 0.1 Collector current IC (A) Cob VCB 200 4 0.03 Collector output capacitance Cob (pF) Transition frequency fT (MHz) 2 hFE IC 3 12 VCB = 10 V Ta = 25°C 2 1 Base current IB (mA) IC / IB = 10 fT IE −10 0 300 10 240 −2 −3 −5 200 8 10 12 14 16 18 20 30 Collector current IC (A) 0 −1 300 VBE(sat) IC IC / IB = 10 0.3 6 100 30 1 400 Collector to emitter voltage VCE (V) VCE(sat) IC 100 500 0 0 Forward current transfer ratio hFE 40 Collector to emitter voltage VCER (V) 20 600 100 100 0 VCE = 10 V Ta = 25°C 700 IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 600 100 0 IC IB 800 Collector current IC (mA) 800 Collector current IC (mA) Collector power dissipation PC (mW) PC Ta 800 20 30 50 100 Collector to base voltage VCB (V) 1 3 10 30 100 300 1 000 Base to emitter resistance RBE (kΩ) Transistors 2SC1317, 2SC1318 ICEO Ta 104 Area of safe operation (ASO) 10 VCE = 10 V Single pulse Ta = 25°C 3 3 Collector current IC (A) ICEO (Ta) ICEO (Ta = 25°C) 10 102 10 ICP 1 t = 10 ms IC t=1s 0.3 DC 0.1 0.03 0.01 0.003 1 0 20 40 60 80 100 120 140 160 180 200 Ambient temperature Ta (°C) 0.001 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 3