VS-UFB310CB40 www.vishay.com Vishay Semiconductors Not Insulated SOT-227 Power Module Ultrafast Rectifier, 310 A FEATURES • Not insulated package • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Optimized for power conversion: welding and industrial SMPS applications • Plug-in compatible with other SOT-227 packages SOT-227 • Easy to assemble • Direct mounting to heatsink Anode 1 • Designed and qualified for industrial level Anode 2 3 • UL approved file E78996 4 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS Base common cathode The VS-UFB310CB40 not insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping life time control, provide a ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. PRODUCT SUMMARY VR IF(AV) at TC = 119 °C per module 400 V (1) 310 A trr 39 ns at TC 135 °C Type Modules - Diode, FRED Pt® Package SOT-227 Note (1) All 4 anode terminals connected These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, DC/DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS VR MAX. UNITS 400 V Continuous forward current per diode IF (1) TC = 135 °C 155 Single pulse forward current per diode IFSM (2) TC = 25 °C 1300 PD TC = 135 °C 421 W -55 to +175 °C Maximum power dissipation per module Operating junction and storage temperatures TJ, TStg A Notes (1) Both anode terminals connected; Maximum IRMS current per leg 200 A to do not exceed the maximum temperature of terminals (2) 10 ms sine or 6 ms rectangular pulse Revision: 31-May-16 Document Number: 93608 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB310CB40 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage Forward voltage, per leg Reverse leakage current, per leg Junction capacitance, per leg SYMBOL VBR VFM IRM CT TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. 400 - - IF = 100 A - 1.11 1.34 UNITS IF = 100 A, TJ = 125 °C - 0.99 1.1 IF = 100 A, TJ = 175 °C - 0.97 - IF = 200 A - 1.3 1.6 IF = 200 A, TJ = 125 °C - 1.22 1.4 IF = 200 A, TJ = 175 °C - 1.25 - VR = VR rated - 1.3 50 VR = VR rated, TJ = 125 °C - 100 - VR = VR rated, TJ = 175 °C - 1 4 mA VR = 400 V - 100 - pF V μA DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time, per leg SYMBOL trr TEST CONDITIONS Reverse recovery charge, per leg IRRM Qrr TYP. MAX. IF = 1.0 A, dIF/dt = 400 A/μs, VR = 30 V - 39 - TJ = 25 °C - 89 - TJ = 125 °C Peak recovery current, per leg MIN. UNITS ns - 184 - - 9 - - 20 - TJ = 25 °C - 400 - TJ = 125 °C - 1840 - MIN. TYP. MAX. UNITS -55 - 175 °C - - 0.19 TJ = 25 °C TJ = 125 °C IF = 50 A dIF/dt = 200 A/μs VR = 200 V A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction and storage temperature range Junction to case, single leg conducting Junction to case, both leg conducting Case to heatsink SYMBOL TEST CONDITIONS TJ, TStg RthJC RthCS - - 0.095 Flat, greased surface - 0.07 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) Weight Mounting torque Case style °C/W SOT-227 not insulated Revision: 31-May-16 Document Number: 93608 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB310CB40 Vishay Semiconductors 10 000 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 1 0 0.5 1.0 1.5 2.0 TJ = 175 °C 1000 2.5 0 50 100 150 200 250 300 350 400 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics, Per Leg Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage, Per Leg CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 10 100 1000 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage, Per Leg 1 0.1 Single pulse (thermal resistance) 0.01 0.0001 0.001 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics, Per Leg Revision: 31-May-16 Document Number: 93608 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB310CB40 Vishay Semiconductors 180 250 160 230 140 210 DC 100 TJ = 125 °C Square Wave (d = 0.5) 80 % Rated VR applied 80 170 150 130 60 110 40 TJ = 25 °C 90 20 70 See note (1) 0 0 40 50 100 80 120 160 200 240 280 320 360 400 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current, Per Leg Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt, Per Leg 400 4000 350 3500 300 3000 250 Limite RMS 200 D=0.20 D=0.25 D=0.33 D=0.50 D=0.75 150 100 Qrr (nC) Average Power Loss (W) VR = 200 V IF = 50 A 190 120 trr (ns) Allowable Case Temperature (°C) www.vishay.com VR = 200 V IF = 50 A TJ = 125 °C 2500 2000 1500 TJ = 25 °C 1000 DC 50 500 0 0 40 80 120 160 200 0 100 240 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics, Per Leg Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt, Per Leg 50 VR = 200 V IF = 50 A 40 Irr (A) TJ = 125 °C 30 20 TJ = 25 °C 10 0 100 1000 dIF/dt (A/µs) Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt, Per Leg Revision: 31-May-16 Document Number: 93608 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB310CB40 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 31-May-16 Document Number: 93608 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB310CB40 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- UF B 310 C B 40 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Ultrafast rectifier 3 - Ultrafast Pt diffused 4 - Current rating (310 = 310 A) 5 - Circuit configuration (2 common cathode diodes) 6 - Package indicator (SOT-227 standard not insulated) 7 - Voltage rating (40 = 400 V) Quantity per tube is 10 pcs, M4 screw and washer included CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment 4 Common cathode diodes, not in insulated base 3 4 3 1 2 Base C 1 2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging Information www.vishay.com/doc?95425 Revision: 31-May-16 Document Number: 93608 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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