VS-UFL250CB60 www.vishay.com Vishay Semiconductors Not Insulated SOT-227 Power Module Ultrafast Rectifier, 250 A FEATURES • Not insulated package • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Optimized for power conversion: welding and industrial SMPS applications • Plug-in compatible with other SOT-227 packages SOT-227 Anode 1 • Easy to assemble • Direct mounting to heatsink Anode 2 3 • Designed and qualified for industrial level 4 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS Base common cathode The VS-UFL250CB60 not insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping life time control, provide a ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. PRODUCT SUMMARY VR IF(AV) at TC = 119 °C per module 600 V (1) 250 A trr 44 ns Type Modules - Diode FRED Pt® Package SOT-227 Note (1) All 4 anode terminals connected These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, DC/DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS VR MAX. UNITS 600 V Continuous forward current per diode IF (1) TC = 135 °C 130 Single pulse forward current per diode IFSM (2) TC = 25 °C 1500 PD TC = 135 °C 421 W -55 to +175 °C Maximum power dissipation per module Operating junction and storage temperatures TJ, TStg A Notes (1) Both anode terminals connected; Maximum IRMS current per leg 200 A to do not exceed the maximum temperature of terminals (2) 10 ms sine or 6 ms rectangular pulse Revision: 31-May-16 Document Number: 93808 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFL250CB60 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Cathode to anode breakdown voltage VBR Forward voltage, per leg TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 100 A - 1.28 1.44 IF = 100 A, TJ = 125 °C - 1.13 1.24 IR = 100 μA VFM IF = 100 A, TJ = 175 °C - 1.03 - IF = 200 A - 1.48 1.66 IF = 200 A, TJ = 125 °C - 1.37 1.55 IF = 200 A, TJ = 175 °C - 1.28 - VR = VR rated - 0.1 50 - 100 - UNITS V μA Reverse leakage current, per leg IRM VR = VR rated, TJ = 125 °C VR = VR rated, TJ = 175 °C - 0.25 2 mA Junction capacitance, per leg CT VR = 600 V - 72 - pF DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time, per leg trr Peak recovery current, per leg IRRM Reverse recovery charge, per leg Qrr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 400 A/μs, VR = 30 V - 44 - TJ = 25 °C - 104 - TJ = 125 °C - 210 - - 10 - - 22 - IF = 50 A dIF/dt = 200 A/μs VR = 200 V TJ = 25 °C TJ = 125 °C TJ = 25 °C - 520 - TJ = 125 °C - 2200 - MIN. TYP. MAX. - - 0.19 - - 0.095 - 0.07 - UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction to case, single leg conducting TEST CONDITIONS RthJC Junction to case, both leg conducting Case to heatsink, per module RthCS Flat, greased surface Weight Mounting torque °C/W - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) Case style SOT-227 not insulated 1000 1000 TJ = 175 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) UNITS 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 100 TJ = 125 °C 10 1 0.1 0.01 0.001 1 0 0.5 1.0 1.5 2.0 2.5 TJ = 25 °C 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics, Per Leg Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage, Per Leg Revision: 31-May-16 Document Number: 93808 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFL250CB60 www.vishay.com Vishay Semiconductors C - Junction Capacitance (pF) 10 000 1000 100 10 10 100 1000 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage, Per Leg 1 PDM 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC.+ TC . 0.01 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 500 175 150 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics, Per Leg DC 125 100 Square Wave (d = 0.5) 80 % Rated VR applied 75 50 25 See note (1) 40 80 400 Limit RMS 300 D=0.20 D=0.25 D=0.33 D=0.50 D=0.75 200 100 DC 0 0 0 120 160 200 240 280 320 0 40 80 120 160 200 240 280 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current, Per Leg Fig. 6 - Forward Power Losses Characteristics, Per Leg Revision: 31-May-16 Document Number: 93808 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFL250CB60 www.vishay.com Vishay Semiconductors 5000 250 230 TJ = 125 °C 210 190 3500 170 3000 150 130 110 VR = 200 V IF = 50 A 4000 Qrr (nC) trr (ns) 4500 VR = 200 V IF = 50 A TJ = 25 °C TJ = 125 °C 2500 2000 1500 90 1000 70 500 50 100 TJ = 25 °C 0 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt, Per Leg Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt, Per Leg 50 VR = 200 V IF = 50 A Irr (A) 40 30 TJ = 125 °C 20 10 TJ = 25 °C 0 100 1000 dIF/dt (A/µs) Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt, Per Leg VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 10 - Reverse Recovery Parameter Test Circuit Revision: 31-May-16 Document Number: 93808 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFL250CB60 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- UF L 250 C B 60 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Ultrafast rectifier 3 - Ultrafast Pt diffused, low VF 4 - Current rating (250 = 250 A) 5 - Circuit configuration (2 common cathode diodes) 6 - Package indicator (SOT-227 standard not insulated) 7 - Voltage rating (60 = 600 V) Quantity per tube is 10 pcs, M4 screw and washer included CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment 4 Common cathode diodes, not in insulated base C 3 4 3 1 2 Base 1 2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Part marking information www.vishay.com/doc?95425 Revision: 31-May-16 Document Number: 93808 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note • Controlling dimension: millimeter Revision: 02-Aug-12 Document Number: 95423 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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