CPV363M4UPbF www.vishay.com Vishay Semiconductors IGBT SIP Module (Ultrafast IGBT) FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses • HEXFRED® soft ultrafast diodes • Optimized for medium speed, see fig. 1 for current vs. frequency curve IMS-2 • UL approved file E78996 • Designed and qualified for industrial level PRODUCT SUMMARY OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE VCES 600 V IRMS per phase (2.1 kW total) with TC = 90 °C 7.1 ARMS TJ 125 °C Supply voltage 360 VDC • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Power factor 0.8 Modulation depth (see fig. 1) 115 % VCE(on) (typical) at IC = 6.8 A, 25 °C 1.7 V Speed 8 kHz to 30 kHz Package SIP Circuit Three phase inverter The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current, each IGBT Pulsed collector current Clamped inductive load current Diode continuous forward current SYMBOL TEST CONDITIONS VCES IC MAX. UNITS 600 V TC = 25 °C 13 TC = 100 °C 6.8 ICM (1) 40 (2) 40 ILM IF TC = 100 °C A 6.1 Diode maximum forward current IFM 40 Gate to emitter voltage VGE ± 20 V 2500 VRMS Isolation voltage Maximum power dissipation, each IGBT Operating junction and storage temperature range VISOL PD Any terminal to case, t = 1 min TC = 25 °C 36 TC = 100 °C 14 TJ, TStg W -40 to +150 °C Soldering temperature For 10 s, (0.063" (1.6 mm) from case) Mounting torque 6-32 or M3 screw 300 5 to 7 (0.55 to 0.8) lbf in (N m) Notes (1) Repetitive rating; V GE = 20 V, pulse width limited by maximum junction temperature (see fig. 20) (2) V CC = 80 % (VCES), VGE = 20 V, L = 10 μH, RG = 23 (see fig. 19) Revision: 10-Jun-15 Document Number: 94486 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV363M4UPbF www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction to case, each IGBT, one IGBT in conduction Junction to case, each DIODE, one DIODE in conduction Case to sink, flat, greased surface SYMBOL TYP. MAX. UNITS RthJC (IGBT) - 3.5 RthJC (DIODE) - 5.5 RthCS (MODULE) 0.10 - 20 - g 0.7 - oz. °C/W Weight of module ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Temperature coeff. of breakdown voltage SYMBOL V(BR)CES (1) V(BR)CESTJ TEST CONDITIONS MIN. TYP. MAX. UNITS VGE = 0 V, IC = 250 μA 600 - - V VGE = 0 V, IC = 1.0 mA - 0.63 - V/°C - 1.70 2.2 - 2.00 - - 1.70 - 3.0 - 6.0 - - 11 - mV/°C VCE = 100 V, IC = 6.8 A 4.0 6.0 - S VGE = 0 V, VCE = 600 V - - 250 VGE = 0 V, VCE = 600 V, TJ = 150 °C - - 2500 IC = 12 A - 1.4 1.7 IC = 12 A, TJ = 150 °C - 1.3 1.6 VGE = ± 20 V - - ± 100 IC = 6.8 A Collector to emitter saturation voltage VCE(on) IC = 13 A VGE = 15 V See fig. 2, 5 IC = 6.8 A, TJ = 150 °C Gate threshold voltage Temperature coeff. of threshold voltage VGE(th) VGE(th)/TJ (2) Forward transconductance gfe Zero gate voltage collector current ICES Diode forward voltage drop Gate to emitter leakage current VFM IGES VCE = VGE, IC = 250 μA V μA See fig. 13 V nA Notes (1) Pulse width 80 μs, duty factor 0.1 % (2) Pulse width 5.0 μs; single shot Revision: 10-Jun-15 Document Number: 94486 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV363M4UPbF www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) tf Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Ets Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) tf Total switching loss Ets Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Diode reverse recovery time trr Diode peak reverse recovery charge Diode reverse recovery charge Diode peak rate of fall of recovery during tb Irr Qrr dI(rec)M/dt TEST CONDITIONS MIN. TYP. MAX. - 53 79 - 7.7 12 - 21 31 - 43 - - 14 - - 95 140 - 83 190 - 0.17 - - 0.15 - - 0.32 0.45 TJ = 150 °C IC = 6.8 A, VCC = 480 V VGE = 15 V, RG = 23 Energy losses include “tail” and diode reverse recovery See fig. 9, 10, 11, 18 - 41 - - 16 - - 110 - - 230 - - 0.52 - VGE = 0 V VCC = 30 V ƒ = 1.0 MHz See fig. 7 - 1100 - - 73 - - 14 - - 42 60 - 83 120 - 3.5 6.0 - 5.6 10 - 80 180 - 220 600 - 180 - - 116 - IC = 6.8 A VCC = 400 V See fig. 8 TJ = 25 °C IC = 6.8 A, VCC = 480 V VGE = 15 V, RG = 23 Energy losses include “tail” and diode reverse recovery. See fig. 9, 10, 11, 18 TJ = 25 °C See fig. 15 TJ = 25 °C See fig. 16 TJ = 125 °C TJ = 25 °C TJ = 125 °C mJ ns mJ pF ns TJ = 125 °C TJ = 25 °C nC ns See fig. 14 TJ = 125 °C UNITS IF = 12 A VR = 200 V dI/dt = 200 A/μs A nC See fig. 17 A/μs Revision: 10-Jun-15 Document Number: 94486 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV363M4UPbF www.vishay.com Vishay Semiconductors Tc = 90°C Tj = 125°C Power Factor = 0.8 Modulation Depth = 1.15 Vcc = 50% of Rated Voltage LOAD CURRENT (A) 10 2.92 8 2.33 6 1.75 4 1.17 2 0.58 Total Output Power (kW) 3.50 12 0.00 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of Fundamental) 14 10 TJ = 150°C TJ = 25°C 1 VGE = 15V 20µs PULSE WIDTH 0.1 0.1 1 Maximum DC Collector Current (A) IC , Collector-to-Emitter Current (A) 100 12 10 8 6 4 2 0 10 25 Fig. 2 - Typical Output Characteristics TJ = 150°C 10 T J = 25°C 1 V CC = 10V 5µs PULSE WIDTH 6 7 8 9 Fig. 3 - Typical Transfer Characteristics 10 VCE , Collector-to-Emitter Voltage(V) IC , Collector-to-Emitter Current (A) 3.0 VGE, Gate-to-Emitter Voltage (V) 75 100 125 150 Fig. 4 - Maximum Collector Current vs. Case Temperature 100 5 50 TC , Case Temperature (°C) VCE , Collector-to-Emitter Voltage (V) 0.1 V GE = 15V VGE = 15V 80 us PULSE WIDTH IC =13.6A 2.0 IC = 6.8A IC = 3.4 A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig. 5 - Typical Collector to Emitter Voltage vs. Junction Temperature Revision: 10-Jun-15 Document Number: 94486 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV363M4UPbF www.vishay.com Vishay Semiconductors Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 P DM 0.02 0.01 0.1 t 1 t SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 /t 2 2 2. Peak TJ = P DM x Z thJC + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case 0.40 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 1600 Total Switching Losses (mJ) C, Capacitance (pF) 2000 Cies 1200 800 Coes 400 Cres VCC VGE TJ 0.38 I C 0.36 0.34 0.32 0.30 0 0 1 10 100 20 10 Total Switching Losses (mJ) 12 8 4 0 0 10 20 30 40 50 60 QG , Total Gate Charge (nC) Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage 24 36 48 60 Fig. 9 - Typical Switching Losses vs. Gate Resistance VCC = 400V I C = 6.8A 16 12 RG , Gate Resistance ( Ω) VCE, Collector-to-Emitter Voltage (V) Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage VGE , Gate-to-Emitter Voltage (V) = 480V = 15V = 25 °C = 6.8A RG = 23 Ω VGE = 15V VCC = 480V IC =13.6 A 1 IC = 6.8 A IC = 3.4 A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature Revision: 10-Jun-15 Document Number: 94486 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV363M4UPbF www.vishay.com RG TJ VCC 1.0 VGE 100 = 23 Ω = 150 °C = 480V = 15V I C, Collector-to-Emitter Current (A) Total Switching Losses (mJ) 1.2 Vishay Semiconductors 0.8 0.6 0.4 0.2 VGE = 20V o T J = 125 C 10 1 SAFE OPERATING AREA 0.0 0 2 4 6 8 10 12 14 0.1 16 1 10 I C , Collector-to-emitter Current (A) 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector to Emitter Current Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) 100 TJ = 150°C 10 TJ = 125°C TJ = 25°C 1 0.4 1.4 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Revision: 10-Jun-15 Document Number: 94486 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV363M4UPbF www.vishay.com Vishay Semiconductors 600 160 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 120 400 Q RR - (nC) t rr - (ns) I F = 24A I F = 12A 80 I F = 6.0A I F = 24A I F = 12A 200 40 IF = 6.0A 0 100 di f /dt - (A/µs) 0 100 1000 Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt 1000 Fig. 16 - Typical Stored Charge vs. dIF/dt 100 10000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) I IRRM - (A) di f /dt - (A/µs) I F = 24A I F = 12A 10 IF = 6.0A 1000 IF = 6.0A IF = 12A 100 IF = 24A 1 100 1000 di f /dt - (A/µs) Fig. 15 - Typical Recovery Current vs. dIF/dt 10 100 1000 di f /dt - (A/µs) Fig. 17 - Typical dI(rec)M/dt vs dIF/dt Revision: 10-Jun-15 Document Number: 94486 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV363M4UPbF www.vishay.com Vishay Semiconductors GATE VOLTAGE D.U.T. 10% +Vg Same type device as D.U.T. +Vg DUT VOLTAGE AND CURRENT Vce 80 % of VCE 430 µF 10% Ic Vcc Ipk 90% Ic Ic D.U.T. 5% Vce tr td(on) t2 Eon = Vce ie dt t1 ∫ t1 Fig. 18a - Test Circuit for Measurements of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t2 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 90% Vge trr Qrr = Ic +Vge tx 10% Vcc Vce ∫ trr id dt tx 10% Irr Vcc Ic 90% Ic 10% Vce Vpk Irr Ic 5% Ic td(off) DIODE RECOVERY WAVEFORMS tf Eoff = ∫ t1+5µS Vce ic dt t1 DIODE REVERSE RECOVERY ENERGY t3 t1 t4 Erec = Vd id dt t3 ∫ t4 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr Vg GATE SIGNAL DEVICE UNDER TES CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit Revision: 10-Jun-15 Document Number: 94486 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV363M4UPbF www.vishay.com Vishay Semiconductors D.U.T. L 1000 V RL = VC 480 V 4 x IC at 25 °C 0 - 480 V 6000 µF 100 V 50 V Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit CIRCUIT CONFIGURATION 1 3 Q1 D1 9 Q3 D3 4 6 Q2 D2 7 12 15 Q5 D5 10 Q4 D4 13 18 16 Q6 D6 19 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95066 Revision: 10-Jun-15 Document Number: 94486 9 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors IMS-2 (SIP) DIMENSIONS in millimeters (inches) Ø 3.91 (0.154) 2x 62.43 (2.458) 7.87 (0.310) 53.85 (2.120) 5.46 (0.215) 21.97 (0.865) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 0.38 (0.015) 3.94 (0.155) 1.27 (0.050) 4.06 ± 0.51 (0.160 ± 0.020) 5.08 (0.200) 6x 1.27 (0.050) 13 x 2.54 (0.100) 6x 3.05 ± 0.38 (0.120 ± 0.015) 0.76 (0.030) 13 x 0.51 (0.020) 6.10 (0.240) IMS-2 Package Outline (13 Pins) Notes (1) Tolerance uless otherwise specified ± 0.254 mm (0.010") (2) Controlling dimension: inch (3) Terminal numbers are shown for reference only Document Number: 95066 Revision: 30-Jul-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000