CPV364M4FPbF www.vishay.com Vishay Semiconductors IGBT SIP Module (Fast IGBT) FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses • HEXFRED® soft ultrafast diodes • Optimized for medium speed, see fig. 1 for current vs. frequency curve IMS-2 • UL approved file E78996 • Designed and qualified for industrial level PRODUCT SUMMARY • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE VCES 600 V IRMS per phase (4.6 kW total) with TC = 90 °C 18 ARMS TJ 125 °C Supply voltage 360 VDC DESCRIPTION Power factor 0.8 Modulation depth (see fig. 1) 115 % VCE(on) (typical) at IC = 15 A, 25 °C 1.35 V Speed 1 kHz to 8 kHz Package SIP Circuit Three phase inverter The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current, each IGBT Pulsed collector current Clamped inductive load current Diode continuous forward current SYMBOL TEST CONDITIONS VCES IC MAX. UNITS 600 V TC = 25 °C 27 TC = 100 °C 15 ICM (1) 80 ILM (2) 80 IF A TC = 100 °C 9.3 Diode maximum forward current IFM 80 Gate to emitter voltage VGE ± 20 V 2500 VRMS Isolation voltage Maximum power dissipation, each IGBT Operating junction and storage temperature range VISOL PD Any terminal to case, t = 1 min TC = 25 °C 63 TC = 100 °C 25 TJ, TStg W -40 to +150 °C Soldering temperature For 10 s, (0.063" (1.6 mm) from case) Mounting torque 6-32 or M3 screw 300 5 to 7 (0.55 to 0.8) lbf · in (N · m) Notes (1) Repetitive rating; V GE = 20 V, pulse width limited by maximum junction temperature (see fig. 20) (2) V CC = 80 % (VCES), VGE = 20 V, L = 10 μH, RG = 10 (see fig. 19) Revision: 10-Jun-15 Document Number: 94487 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV364M4FPbF www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction to case, each IGBT, one IGBT in conduction Junction to case, each DIODE, one DIODE in conduction Case to sink, flat, greased surface SYMBOL TYP. MAX. UNITS RthJC (IGBT) - 2.0 RthJC (DIODE) - 3.0 RthCS (MODULE) 0.10 - 20 - g 0.7 - oz. °C/W Weight of module ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage V(BR)CES (1) V(BR)CESTJ Temperature coefficient of breakdown voltage TEST CONDITIONS MIN. TYP. MAX. UNITS VGE = 0 V, IC = 250 μA 600 - - V VGE = 0 V, IC = 1.0 mA - 0.69 - V/°C - 1.35 1.5 - 1.60 - - 1.35 - 3.0 - 6.0 - - 12 - mV/°C VCE = 100 V, IC = 27 A 9.2 12 - S VGE = 0 V, VCE = 600 V - - 250 VGE = 0 V, VCE = 600 V, TJ = 150 °C - - 2500 IC = 15 A - 1.3 1.7 IC = 15 A, TJ = 150 °C - 1.2 1.6 VGE = ± 20 V - - ± 100 IC = 15 A Collector to emitter saturation voltage VCE(on) IC = 27 A VGE = 15 V See fig. 2, 5 IC = 15 A, TJ = 150 °C Gate threshold voltage VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ Forward transconductance gfe (2) Zero gate voltage collector current ICES Diode forward voltage drop Gate to emitter leakage current VFM IGES VCE = VGE, IC = 250 μA V μA See fig. 13 V nA Notes (1) Pulse width 80 μs, duty factor 0.1 % (2) Pulse width 5.0 μs; single shot Revision: 10-Jun-15 Document Number: 94487 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV364M4FPbF www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on delay time td(on) Rise time Turn-off delay time Fall time TEST CONDITIONS IC = 15 A VCC = 400 V VGE = 15 V See fig. 8 tr td(off) tf TJ = 25 °C IC = 15 A, VCC = 480 V VGE = 15 V, RG = 10 Energy losses include “tail” and diode reverse recovery See fig. 9, 10, 11, 18 MIN. TYP. MAX. - 100 160 - 15 23 - 37 56 - 42 - - 18 - - 220 330 - 160 240 - 0.46 - Eon Turn-off switching loss Eoff - 0.86 - Total switching loss Ets - 1.32 1.8 Turn-on delay time td(on) - 39 - - 19 - - 410 - - 290 - - 2.5 - - 2200 - - 140 - - 29 - - 42 60 - 74 120 - 4.0 6.0 - 6.5 10 - 80 180 - 220 600 - 188 - - 160 - Rise time Turn-off delay time Fall time tr td(off) tf Total switching loss Ets Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Diode reverse recovery time trr Diode peak reverse recovery charge Diode reverse recovery charge Diode peak rate of fall of recovery during tb Irr Qrr dI(rec)M/dt VGE = 0 V VCC = 30 V ƒ = 1.0 MHz See fig. 7 TJ = 25 °C See fig. 15 TJ = 125 °C TJ = 25 °C See fig. 16 TJ = 125 °C TJ = 25 °C TJ = 125 °C mJ ns See fig. 14 mJ pF ns TJ = 125 °C TJ = 25 °C nC ns Turn-on switching loss TJ = 150 °C IC = 15 A, VCC = 480 V VGE = 15 V, RG = 10 Energy losses include “tail” and diode reverse recovery See fig. 9, 10, 11, 18 UNITS IF = 15 A VR = 200 V dI/dt = 200 A/μs A nC See fig. 17 A/μs Revision: 10-Jun-15 Document Number: 94487 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV364M4FPbF www.vishay.com Vishay Semiconductors 25 LOAD CURRENT (A) 20 Total Output Power (kW) 7.34 Tc = 90°C Tj = 125°C Power Factor = 0.8 Modulation Depth = 1.15 Vcc = 50% of Rated Voltage 5.87 15 4.40 10 2.94 5 1.47 0.00 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of Fundamental) 30 Maximum DC Collector Current(A) IC , Collector-to-Emitter Current (A) 100 TJ = 25°C TJ = 150°C 10 V GE = 15V 20µs PULSE WIDTH 1 1 25 20 15 10 5 0 10 25 VCE , Collector-to-Emitter Voltage (V) TJ = 150°C 10 TJ = 25°C V CC = 50V 5µs PULSE WIDTH 7 8 9 VGE, Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 10 VCE , Collector-to-Emitter Voltage(V) IC , Collector-to-Emitter Current (A) 3.0 6 100 125 150 Fig. 4 - Maximum Collector Current vs. Case Temperature 100 5 75 TC , Case Temperature ( °C) Fig. 2 - Typical Output Characteristics 1 50 VGE = 15V 80 us PULSE WIDTH IC = 30A 2.0 IC = 15A IC = 7.5A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig. 5 - Typical Collector to Emitter Voltage vs. Junction Temperature Revision: 10-Jun-15 Document Number: 94487 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV364M4FPbF www.vishay.com Vishay Semiconductors Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 t 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 /t 1 t 2 2 2. Peak TJ = P DM x Z thJC + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case 4000 VGE = 0V 1.45 f = 1 MHz Cies = Cge + Cgc + Cce Cres = Cce Total Switching Losses (mJ) Coes = Cce + Cgc 3000 Cies 2000 Coes 1000 VCC VGE TJ IC SHORTED = 480V = 15V = 25 ° C = 15A 1.40 1.35 Cres 0 1 10 1.30 100 0 Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage 10 VCC = 400V I C = 15A 16 12 8 4 0 0 20 40 60 80 100 20 30 40 50 Fig. 9 - Typical Switching Losses vs. Gate Resistance Total Switching Losses (mJ) VGE , Gate-to-Emitter Voltage (V) 20 10 RG , Gate Resistance ( Ω ) VCE, Collector-to-Emitter Voltage (V) 120 QG , Total Gate Charge (nC) Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage RG = 10 Ω VGE = 15V VCC = 480V IC = 30 A IC = 15 A IC = 7.5 A 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature Revision: 10-Jun-15 Document Number: 94487 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV364M4FPbF www.vishay.com RG TJ VCC 5.0 VGE 1000 = 10 Ω = 150 °C = 480V = 15V I C, Collector-to-Emitter Current (A) Total Switching Losses (mJ) 6.0 Vishay Semiconductors 4.0 3.0 2.0 1.0 VGE = 20V T J = 125 oC 100 10 SAFE OPERATING AREA 1 0.0 0 5 10 15 20 25 1 30 10 100 1000 VCE , Collector-to-Emitter Voltage (V) I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector to Emitter Current Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) 100 10 TJ = 150°C TJ = 125°C TJ = 25°C 1 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Revision: 10-Jun-15 Document Number: 94487 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV364M4FPbF www.vishay.com Vishay Semiconductors 800 100 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 600 80 Q RR - (nC) t rr - (ns) IF = 30A I F = 30A 60 I F = 15A 400 I F = 15A IF = 5.0A 200 40 I F = 5.0A 20 100 di f /dt - (A/µs) 0 100 1000 100 1000 VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) VR = 200V TJ = 125°C TJ = 25°C I F = 30A I IRRM - (A) 1000 Fig. 16 - Typical Stored Charge vs. dIF/dt Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt 10 di f /dt - (A/µs) IF = 15A I F = 5.0A I F = 15A I F = 30A I F = 5.0A 1 100 1000 di f /dt - (A/µs) Fig. 15 - Typical Recovery Current vs. dIF/dt 100 100 1000 di f /dt - (A/µs) Fig. 17 - Typical dI(rec)M/dt vs dIF/dt Revision: 10-Jun-15 Document Number: 94487 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV364M4FPbF www.vishay.com Vishay Semiconductors GATE VOLTAGE D.U.T. 10% +Vg +Vg Same type device as D.U.T. DUT VOLTAGE AND CURRENT Vce 80 % of VCE 430 µF Vcc 10% Ic Ipk 90% Ic Ic D.U.T. 5% Vce tr td(on) t2 Eon = Vce ie dt t1 ∫ t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t2 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 90% Vge trr Qrr = Ic +Vge tx 10% Vcc Vce ∫ trr id dt tx 10% Irr Vcc Ic 90% Ic 10% Vce Vpk Irr Ic 5% Ic td(off) DIODE RECOVERY WAVEFORMS tf Eoff = ∫ t1+5µS Vce ic dt t1 DIODE REVERSE RECOVERY ENERGY t3 t1 t4 Erec = Vd id dt t3 ∫ t4 t2 Fig. 18b - Test Waveforms for Circuit for Fig. 18a, Defining Eoff, td(off), tf Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr Vg GATE SIGNAL DEVICE UNDER TES CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit Revision: 10-Jun-15 Document Number: 94487 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CPV364M4FPbF www.vishay.com Vishay Semiconductors D.U.T. L 1000 V VC RL = 6000 µF 100 V 50 V 480 V 4 x IC at 25 °C 0 - 480 V Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit CIRCUIT CONFIGURATION 1 3 Q1 D1 9 Q3 D3 4 6 Q2 D2 7 12 15 Q5 D5 10 Q4 D4 13 18 16 Q6 D6 19 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95066 Revision: 10-Jun-15 Document Number: 94487 9 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors IMS-2 (SIP) DIMENSIONS in millimeters (inches) Ø 3.91 (0.154) 2x 62.43 (2.458) 7.87 (0.310) 53.85 (2.120) 5.46 (0.215) 21.97 (0.865) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 0.38 (0.015) 3.94 (0.155) 1.27 (0.050) 4.06 ± 0.51 (0.160 ± 0.020) 5.08 (0.200) 6x 1.27 (0.050) 13 x 2.54 (0.100) 6x 3.05 ± 0.38 (0.120 ± 0.015) 0.76 (0.030) 13 x 0.51 (0.020) 6.10 (0.240) IMS-2 Package Outline (13 Pins) Notes (1) Tolerance uless otherwise specified ± 0.254 mm (0.010") (2) Controlling dimension: inch (3) Terminal numbers are shown for reference only Document Number: 95066 Revision: 30-Jul-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000