VS-GB100LP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 100 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology INT-A-PAK • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY TYPICAL APPLICATIONS VCES 1200 V IC at TC = 80 °C 100 A VCE(on) (typical) at IC = 100 A, 25 °C 1.8 V Speed 8 kHz to 30 kHz Package INT-A-PAK Circuit Chopper low side switch • AC inverter drives • Switching mode power supplies • Electronic welders DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES ± 20 Collector current Pulsed collector current IC ICM (1) TC = 25 °C UNITS V 200 TC = 80 °C 100 tp = 1 ms 200 A Diode continuous forward current IF Diode maximum forward current IFM Maximum power dissipation PD TJ = 150 °C 658 W Short circuit withstand time tSC TJ = 125 °C 10 μs f = 50 Hz, t = 1 min 2500 V VR= 0 V, t = 10 ms, TJ = 125 °C 1700 A2s -40 to +150 °C RMS isolation voltage VISOL I2t-value, diode I2t Operating junction temperature range TJ 100 200 Note (1) Repetitive rating: pulse width limited by maximum junction temperature. Revision: 10-Jun-15 Document Number: 94808 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100LP120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 100 A, TJ = 25 °C - 1.8 - VGE = 15 V, IC = 100 A, TJ = 125 °C - 2.0 - 5.0 6.1 7.0 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 2 mA, TJ = 25 °C Collector cut-off current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 1.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA UNITS SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time Fall time SYMBOL MIN. TYP. MAX. td(on) - 95 - tr - 38 - - 360 - td(off) tf TEST CONDITIONS VCC = 600 V, IC = 100 A, Rg = 3 , VGE = ± 15 V, TJ = 25 °C - 45 - Turn-on switching loss Eon - 6.5 - Turn-off switching loss Eoff - 5.7 - Turn-on delay time td(on) - 110 - tr - 45 - - 420 - - 60 - Rise time Turn-off delay time Fall time td(off) tf VCC = 600 V, IC = 100 A, Rg = 3 , VGE = ± 15 V, TJ = 125 °C Turn-on switching loss Eon - 9.8 - Turn-off switching loss Eoff - 8.7 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data Internal gate resistance Stray inductance Module lead resistance, terminal to chip ISC VGE = 0 V, VCE = 25 V, f = 1.0 MHz tsc 10 μs, VGE = 15 V, TJ = 125 °C, VCC = 900 V, VCEM 1200 V Rgint LCE RCC’+EE’ TC = 25 °C ns mJ ns mJ - 7.43 - - 0.52 - - 0.34 - - 470 - A - 2 - - - 30 nH - 0.75 - m MIN. TYP. MAX. UNITS nF DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Diode forward voltage VF Diode reverse recovery charge Qrr Diode peak reverse recovery current Irr Diode reverse recovery energy Erec TEST CONDITIONS IF = 100 A IF = 100 A, VR = 600 V, dIF/dt = -3600 A/μs, VGE = -15 V TJ = 25 °C - 2.0 2.3 TJ = 125 °C - 2.2 2.5 TJ = 25 °C - 10 - TJ = 125 °C - 16 - TJ = 25 °C - 90 - TJ = 125 °C - 120 - TJ = 25 °C - 3.5 - TJ = 125 °C - 6.0 - V μC A mJ Revision: 10-Jun-15 Document Number: 94808 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100LP120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range Storage temperature range IGBT (per 1/2 module) Junction to case MIN. TYP. MAX. TJ TEST CONDITIONS -40 - 150 TSTG -40 - 125 RthJC Diode (per 1/2 module) Case to sink RthCS Conductive grease applied Mounting torque - - 0.19 - - 0.28 - 0.05 - Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 6.0 Weight of module 250 80 25 °C 200 IC (A) E on, Eoff (mJ) 100 125 °C 150 100 K/W g VCC = 600 V Rg = 3 Ω VGE = ± 15 V TJ = 125 °C Eon 60 40 20 50 °C Nm 150 300 UNITS Eoff VGE = 15 V 0 0 0 1 2 3 4 0 5 100 150 200 250 300 VCE (V) IC (A) Fig. 1 - Typical Output Characteristics Fig. 3 - Switching Loss vs. Collector Current 200 25 VCC = 600 V IC = 100 A VGE = ± 15 V TJ = 125 °C VCE = 20 V 20 120 E on, Eoff (mJ) 160 IC (A) 50 125 °C 80 Eon 15 Eoff 10 25 °C 40 5 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE (V) Fig. 2 - Typical Transfer Characteristics 0 10 20 30 Rg (Ω) Fig. 4 - Switching Loss vs. Gate Resistor Revision: 10-Jun-15 Document Number: 94808 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100LP120N www.vishay.com Vishay Semiconductors 20 103 VCC = 600 V td(off) 10 t (ns) VGE (V) 15 td(on) 102 tr tf 5 VCC = 600 V Rg = 3 Ω VGE = ± 15 V TJ = 125 °C IC = 100 A TJ = 25 °C 0 0 0.2 0.4 0.6 0.8 101 1 0 Qg (μC) 101 104 150 200 250 VCC = 600 V IC = 100 A VGE = ± 15 V TJ = 125 °C Cies 103 td(off) 102 td(on) tr t (ns) C (nF) 100 IC (A) Fig. 7 - Typical Switching Time vs. IC Fig. 5 - Gate Charge Characteristics Coes 100 50 Cres tf 10-1 101 0 5 10 15 20 25 30 35 0 10 20 30 Rg (Ω) Fig. 8 - Typical Switching Time vs. Gate Resistance Rg VCE (V) Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage 200 150 IF (A) 25 °C 100 125 °C 50 0 0 1 2 3 4 VF (V) Fig. 9 - Diode Typical Forward Characteristics Revision: 10-Jun-15 Document Number: 94808 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100LP120N www.vishay.com Vishay Semiconductors 100 Diode ZthJC (K/W) 10-1 IGBT 10-2 10-3 10-4 10-5 10-4 10-2 10-3 10-1 100 tp (s) Fig. 10 - Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95524 Revision: 10-Jun-15 Document Number: 94808 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors INT-A-PAK DIMENSIONS in millimeters (inches) Revision: 06-Aug-12 Document Number: 95524 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000