VS-GB75TP120U Datasheet

VS-GB75TP120U
www.vishay.com
Vishay Semiconductors
Molding Type Module IGBT,
2 in 1 Package, 1200 V, 75 A
FEATURES
• High short circuit capability, self limiting to 6 x IC
• 10 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Rugged with ultrafast performance
• Square RBSOA
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
INT-A-PAK
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRODUCT SUMMARY
• Switching mode power supplies
VCES
1200 V
IC at TC = 80 °C
75 A
• Inductive heating
VCE(on) (typical)
at IC = 75 A, 25 °C
3.2 V
• UPS
Speed
8 kHz to 30 kHz
Package
INT-A-PAK
Circuit
Half bridge
• Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
VCES
1200
Gate to emitter voltage
VGES
± 20
Collector current
Pulsed collector current
IC
ICM
Diode continuous forward current
IF
(1)
UNITS
V
TC = 25 °C
105
TC = 80 °C
75
tp = 1 ms
150
A
75
150
Diode maximum forward current
IFM
Maximum power dissipation
PD
TJ = 150 °C
500
W
Short circuit withstand time
tSC
TJ = 125 °C
10
μs
f = 50 Hz, t = 1 min
2500
V
VR = 0 V, t = 10 ms, TJ = 125 °C
1170
A2s
RMS isolation voltage
I2t-value, diode
VISOL
I2t
Note
(1) Repetitive rating: pulse width limited by maximum junction temperature.
Revision: 10-Jun-15
Document Number: 94822
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB75TP120U
www.vishay.com
Vishay Semiconductors
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
V(BR)CES
TEST CONDITIONS
TJ = 25 °C
MIN.
TYP.
MAX.
1200
-
-
VGE = 15 V, IC = 75 A, TJ = 25 °C
-
3.2
-
VGE = 15 V, IC = 75 A, TJ = 125 °C
-
3.7
-
4.5
5.1
5.5
UNITS
Collector to emitter voltage
VCE(on)
V
Gate to emitter threshold voltage
VGE(th)
VCE = VGE, IC = 3 mA, TJ = 25 °C
Collector cut-off current
ICES
VCE = VCES, VGE = 0 V, TJ = 25 °C
-
-
2.0
mA
Gate to emitter leakage current
IGES
VGE = VGES, VCE = 0 V, TJ = 25 °C
-
-
400
nA
UNITS
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
SYMBOL
MIN.
TYP.
MAX.
td(on)
-
160
-
tr
-
80
-
-
420
-
td(off)
TEST CONDITIONS
VCC = 600 V, IC = 75 A, Rg = 15 ,
VGE = ± 15 V, TJ = 25 °C
-
110
-
Turn-on switching loss
Eon
-
5.7
-
Turn-off switching loss
Eoff
-
1.9
-
Turn-on delay time
td(on)
-
140
-
tr
-
90
-
-
460
-
Fall time
Rise time
Turn-off delay time
Fall time
tf
td(off)
tf
VCC = 600 V, IC = 75 A, Rg = 15 ,
VGE = ± 15 V, TJ = 125 °C
ns
mJ
ns
-
150
-
Turn-on switching loss
Eon
-
6.8
-
Turn-off switching loss
Eoff
-
3.2
-
-
4.3
-
-
0.40
-
-
0.16
-
-
235
-
A
-
-
30
nH
-
0.75
-
m
MIN.
TYP.
MAX.
UNITS
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
SC data
ISC
Stray inductance
LCE
Module lead resistance, terminal to chip
RCC’+EE’
VGE = 0 V, VCE = 30 V, f = 1.0 MHz, 
TJ = 25 °C
tsc  10 μs, VGE = 15 V, TJ = 125 °C, 
VCC = 900 V, VCEM  1200 V
TC = 25 °C
mJ
nF
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Diode forward voltage
VF
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current
Irr
Diode reverse recovery energy
Erec
TEST CONDITIONS
IF = 75 A
IF = 75 A, VR = 600 V,
dIF/dt = -2000 A/μs,
VGE = -15 V
TJ = 25 °C
-
1.9
2.3
TJ = 125 °C
-
2.0
2.4
TJ = 25 °C
-
100
-
TJ = 125 °C
-
125
-
TJ = 25 °C
-
80
-
TJ = 125 °C
-
100
-
TJ = 25 °C
-
3.0
-
TJ = 125 °C
-
6.0
-
V
μC
A
mJ
Revision: 10-Jun-15
Document Number: 94822
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB75TP120U
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction temperature range
Storage temperature range
TEST CONDITIONS
MIN.
TYP.
MAX.
TJ
-40
-
150
TSTG
-40
-
125
-
-
0.25
-
-
0.40
-
0.05
-
°C
IGBT (per 1/2 module)
Junction to case
RthJC
Diode (per 1/2 module)
Case to sink
Conductive grease applied
RthCS
Power terminal screw: M5
2.5 to 5.0
Mounting screw: M6
3.0 to 5.0
Mounting torque
K/W
Nm
Weight of module
160
g
16
150
VCC = 600 V
Rg = 15 Ω
VGE = ± 15 V
TJ = 125 °C
VGE = 15 V
14
125
12
25 °C
75
Eon, Eoff (mJ)
100
IC (A)
UNITS
125 °C
50
10
Eon
8
6
Eoff
4
25
2
0
0
0
1
2
3
4
0
5
50
75
100
125
VCE (V)
IC (A)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Total Switching Loss vs. IC
16
150
VCC = 600 V
IC = 75 A
VGE = ± 15 V
TJ = 125 °C
VCE = 20 V
14
125
12
75
125 °C
Eon, Eoff (mJ)
100
IC (A)
25
25 °C
50
150
Eon
10
8
6
Eoff
4
25
2
0
0
5
6
7
8
9
10
11
VGE (V)
Fig. 2 - Typical Transfer Characteristics
12
0
10
20
30
40
50
Rg (Ω)
Fig. 4 - Total Switching Loss vs. Rg
Revision: 10-Jun-15
Document Number: 94822
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB75TP120U
www.vishay.com
Vishay Semiconductors
15
103
VCC = 600 V
td(off)
td(on)
tf
9
t (ns)
VGE (V)
12
6
3
102
tr
VCC = 600 V
Rg = 15 Ω
VGE = ± 15 V
TJ = 125 °C
IC = 75 A
TJ = 25 °C
0
0
250
500
750
101
1000
0
25
50
Qg (nC)
75
100
125
150
175
IC (A)
Fig. 5 - Gate Charge Characteristics
Fig. 7 - Typical Switching Times vs. IC
101
104
Cies
td(off)
10
0
tr
td(on)
tf
t (ns)
C (nF)
103
Coes
102
VCC = 600 V
IC = 75 A
VGE = ± 15 V
TJ = 125 °C
Cres
10-1
10-1
0
5
10
15
20
25
30
35
0
20
40
60
80
100
120
VCE (V)
Rg (Ω)
Fig. 6 - Typical Capacitance vs. Collector to Emitter Current
Fig. 8 - Typical Switching Times vs.Gate Resistance Rg
150
125
25 °C
IF (A)
100
125 °C
75
50
25
0
0
0.5
1
1.5
2
2.5
3
VF (V)
Fig. 9 - Diode Typical Forward Characteristics
Revision: 10-Jun-15
Document Number: 94822
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB75TP120U
www.vishay.com
Vishay Semiconductors
100
Diode
ZthJC (K/W)
IGBT
10-1
10-2
10-3
10-4
10-3
10-2
10-1
100
t (s)
Fig. 10 - Transient Thermal Impedance
CIRCUIT CONFIGURATION
6
7
1
2
3
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95524
Revision: 10-Jun-15
Document Number: 94822
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000