VS-GB75TP120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 75 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Rugged with ultrafast performance • Square RBSOA • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology INT-A-PAK • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRODUCT SUMMARY • Switching mode power supplies VCES 1200 V IC at TC = 80 °C 75 A • Inductive heating VCE(on) (typical) at IC = 75 A, 25 °C 3.2 V • UPS Speed 8 kHz to 30 kHz Package INT-A-PAK Circuit Half bridge • Electronic welders DESCRIPTION Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES ± 20 Collector current Pulsed collector current IC ICM Diode continuous forward current IF (1) UNITS V TC = 25 °C 105 TC = 80 °C 75 tp = 1 ms 150 A 75 150 Diode maximum forward current IFM Maximum power dissipation PD TJ = 150 °C 500 W Short circuit withstand time tSC TJ = 125 °C 10 μs f = 50 Hz, t = 1 min 2500 V VR = 0 V, t = 10 ms, TJ = 125 °C 1170 A2s RMS isolation voltage I2t-value, diode VISOL I2t Note (1) Repetitive rating: pulse width limited by maximum junction temperature. Revision: 10-Jun-15 Document Number: 94822 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75TP120U www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 75 A, TJ = 25 °C - 3.2 - VGE = 15 V, IC = 75 A, TJ = 125 °C - 3.7 - 4.5 5.1 5.5 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 3 mA, TJ = 25 °C Collector cut-off current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 2.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA UNITS SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time SYMBOL MIN. TYP. MAX. td(on) - 160 - tr - 80 - - 420 - td(off) TEST CONDITIONS VCC = 600 V, IC = 75 A, Rg = 15 , VGE = ± 15 V, TJ = 25 °C - 110 - Turn-on switching loss Eon - 5.7 - Turn-off switching loss Eoff - 1.9 - Turn-on delay time td(on) - 140 - tr - 90 - - 460 - Fall time Rise time Turn-off delay time Fall time tf td(off) tf VCC = 600 V, IC = 75 A, Rg = 15 , VGE = ± 15 V, TJ = 125 °C ns mJ ns - 150 - Turn-on switching loss Eon - 6.8 - Turn-off switching loss Eoff - 3.2 - - 4.3 - - 0.40 - - 0.16 - - 235 - A - - 30 nH - 0.75 - m MIN. TYP. MAX. UNITS Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data ISC Stray inductance LCE Module lead resistance, terminal to chip RCC’+EE’ VGE = 0 V, VCE = 30 V, f = 1.0 MHz, TJ = 25 °C tsc 10 μs, VGE = 15 V, TJ = 125 °C, VCC = 900 V, VCEM 1200 V TC = 25 °C mJ nF DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Diode forward voltage VF Diode reverse recovery charge Qrr Diode peak reverse recovery current Irr Diode reverse recovery energy Erec TEST CONDITIONS IF = 75 A IF = 75 A, VR = 600 V, dIF/dt = -2000 A/μs, VGE = -15 V TJ = 25 °C - 1.9 2.3 TJ = 125 °C - 2.0 2.4 TJ = 25 °C - 100 - TJ = 125 °C - 125 - TJ = 25 °C - 80 - TJ = 125 °C - 100 - TJ = 25 °C - 3.0 - TJ = 125 °C - 6.0 - V μC A mJ Revision: 10-Jun-15 Document Number: 94822 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75TP120U www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range Storage temperature range TEST CONDITIONS MIN. TYP. MAX. TJ -40 - 150 TSTG -40 - 125 - - 0.25 - - 0.40 - 0.05 - °C IGBT (per 1/2 module) Junction to case RthJC Diode (per 1/2 module) Case to sink Conductive grease applied RthCS Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 5.0 Mounting torque K/W Nm Weight of module 160 g 16 150 VCC = 600 V Rg = 15 Ω VGE = ± 15 V TJ = 125 °C VGE = 15 V 14 125 12 25 °C 75 Eon, Eoff (mJ) 100 IC (A) UNITS 125 °C 50 10 Eon 8 6 Eoff 4 25 2 0 0 0 1 2 3 4 0 5 50 75 100 125 VCE (V) IC (A) Fig. 1 - Typical Output Characteristics Fig. 3 - Total Switching Loss vs. IC 16 150 VCC = 600 V IC = 75 A VGE = ± 15 V TJ = 125 °C VCE = 20 V 14 125 12 75 125 °C Eon, Eoff (mJ) 100 IC (A) 25 25 °C 50 150 Eon 10 8 6 Eoff 4 25 2 0 0 5 6 7 8 9 10 11 VGE (V) Fig. 2 - Typical Transfer Characteristics 12 0 10 20 30 40 50 Rg (Ω) Fig. 4 - Total Switching Loss vs. Rg Revision: 10-Jun-15 Document Number: 94822 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75TP120U www.vishay.com Vishay Semiconductors 15 103 VCC = 600 V td(off) td(on) tf 9 t (ns) VGE (V) 12 6 3 102 tr VCC = 600 V Rg = 15 Ω VGE = ± 15 V TJ = 125 °C IC = 75 A TJ = 25 °C 0 0 250 500 750 101 1000 0 25 50 Qg (nC) 75 100 125 150 175 IC (A) Fig. 5 - Gate Charge Characteristics Fig. 7 - Typical Switching Times vs. IC 101 104 Cies td(off) 10 0 tr td(on) tf t (ns) C (nF) 103 Coes 102 VCC = 600 V IC = 75 A VGE = ± 15 V TJ = 125 °C Cres 10-1 10-1 0 5 10 15 20 25 30 35 0 20 40 60 80 100 120 VCE (V) Rg (Ω) Fig. 6 - Typical Capacitance vs. Collector to Emitter Current Fig. 8 - Typical Switching Times vs.Gate Resistance Rg 150 125 25 °C IF (A) 100 125 °C 75 50 25 0 0 0.5 1 1.5 2 2.5 3 VF (V) Fig. 9 - Diode Typical Forward Characteristics Revision: 10-Jun-15 Document Number: 94822 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75TP120U www.vishay.com Vishay Semiconductors 100 Diode ZthJC (K/W) IGBT 10-1 10-2 10-3 10-4 10-3 10-2 10-1 100 t (s) Fig. 10 - Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95524 Revision: 10-Jun-15 Document Number: 94822 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000