Power Transistors 2SC5809 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching 9.9±0.3 3.0±0.5 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip • High-speed switching (Fall time tf is short) • High collector-base voltage (Emitter open) VCBO • Low collector-emitter saturation voltage VCE(sat) • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 800 V Collector-emitter voltage (Base open) VCEO 500 V Emitter-base voltage (Collector open) VEBO 8 V IC 3 A Collector current Peak collector current TC = 25°C ICP 6 A PC 30 W Ta = 25°C φ 3.2±0.1 15.0±0.5 ■ Features Collector power dissipation 4.6±0.2 1.4±0.2 1.6±0.2 2.6±0.1 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 2 1: Base 2: Collector 3: Emitter TO-220D-A1 Package 3 Marking Symbol: C5809 Internal Connection C 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C B E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO VCB = 800 V, IE = 0 100 µA Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0 100 µA Forward current transfer ratio Collector-emitter saturation voltage Conditions hFE1 VCE = 5 V, IC = 0.1 A 15 VCE = 5 V, IC = 3 A 8 VCE(sat) IC = 3 A, IB = 0.6 A VCE = 10 V, IC = 0.5 A, f = 1 MHz Turn-on time ton Storage time tstg Fall time tf Typ Max 500 hFE2 fT Transition frequency Min Unit V 0.3 0.6 V 8 MHz IC = 3.0 A, Resistance loaded 1.1 µs IB1 = 0.6 A, IB2 = − 0.6 A 2.0 µs VCC = 200 V 0.3 µs Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: November 2002 SJD00291AED 1 2SC5809 PC Ta 35 (1) 30 Collector current IC (A) Collector power dissipation PC (W) Safe operation area 100 (1) TC = Ta (2) With a 100 × 100 × 2 mm Al heat sink (3) Without heat sink 25 20 15 (2) 10 Non repetitive pulse TC = 25°C 10 I CP t = 1 ms IC t=1s t = 10 ms 1 0.1 5 (3) 0 0 20 40 60 0.01 80 100 120 140 160 Ambient temperature Ta (°C) 1 10 100 1 000 Collector-emitter voltage VCE (V) Rth t Thermal resistance Rth (°C/W) 1 000 Ta = 25°C 100 (1) 10 (2) 1 0.1 0.001 (1) Without heat sink (2) With a Al heat sink 10 × 10 × 2 mm 0.01 0.1 1 10 100 Time t (s) 2 SJD00291AED 1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL