This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2374A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1548A Unit: mm 4.6±0.2 9.9±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open) VEBO 6 V 3 A 5 A 25 W IC Peak collector current ICP TC = 25°C Collector power dissipation PC 13.7±0.2 4.2±0.2 Solder Dip ■ Absolute Maximum Ratings Ta = 25°C Collector current φ 3.2±0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw 3.0±0.5 ■ Features 15.0±0.5 M Di ain sc te on na tin nc ue e/ d 2.9±0.2 1.4±0.2 1.6±0.2 2.6±0.1 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package 2.0 Junction temperature Tj Storage temperature Tstg 150 °C −55 to +150 °C Parameter ce /D isc on tin ue ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) VCEO IC = 30 mA, IB = 0 Base-emitter voltage VBE VCE = 4 V, IC = 3 A 1.8 V 80 V ICES VCE = 80 V, VBE = 0 200 µA ICEO VCE = 60 V, IB = 0 300 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 Forward current transfer ratio hFE1 * VCE = 4 V, IC = 1 A 70 hFE2 VCE = 4 V, IC = 3 A 10 Collector-emitter saturation voltage VCE(sat) an Collector-emitter cutoff current (E-B short) Ma int en Collector-emitter cutoff current (Base open) IC = 3 A, IB = 0.375 A 1 mA 250 1.2 V Transition frequency fT VCE = 10 V, IC = 0.5 A, f = 10 MHz 30 MHz Turn-on time ton IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 A 0.5 µs Storage time tstg VCC = 50 V Fall time tf 2.5 µs 0.4 µs Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q P hFE1 70 to 150 120 to 250 Publication date: March 2004 SJD00261BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SD2374A PC Ta IC VCE IC VBE 8 6 (1)TC=Ta (2)Without heat sink (PC=2W) VCE=4V TC=25˚C TC=25˚C 5 Collector current IC (A) (1) 24 16 IB=100mA 90mA 80mA 70mA 50mA 40mA 30mA 60mA 4 3 Collector current IC (A) 32 20mA 6 4 M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (W) 40 2 10mA 2 8 1 40 80 120 0 160 Ambient temperature Ta (°C) Forward current transfer ratio hFE 0.01 1 10 an Thermal resistance Rth (°C/W) en int Ma t=10ms 0.01 1 10 2SD2374A 0.1 2SD2374 Collector current IC (A) t=1ms t=1s 1 100 0.2 0.4 1 000 0.1 1 0.6 0.8 1.0 fT I C VCE=10V f=10MHz TC=25˚C 100 10 1 0.1 0.01 10 Collector current IC (A) 0.1 1 10 Collector current IC (A) Rth t (1)Without heat sink (2)With a 100×80×2mm Al heat sink 102 Ta=25˚C (1) (2) 10 1 10−1 10−2 10−4 10−3 10−2 10−1 1 Time t (s) SJD00261BED 1.2 1 000 VCE=4V TC=25˚C Collector-emitter voltage VCE (V) 2 0 Base-emitter voltage VBE (V) 103 Non repetitive pulse TC=25˚C IC 12 10 1 0.01 Safe operation area ICP 10 102 ce /D isc on tin Collector current IC (A) 10 8 103 ue Collector-emitter saturation voltage VCE(sat) (V) 0.1 100 6 hFE IC 1 0.1 4 104 IC/IB=8 TC=25˚C 0.001 0.01 2 Collector-emitter voltage VCE (V) VCE(sat) IC 10 0 0 Transition frequency fT (MHz) 0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (2) 0 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.