This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors XP02401 (XP2401) Silicon PNP epitaxial planar type (0.425) 0.20±0.05 4 0.2±0.1 M Di ain sc te on na tin nc ue e/ d 1 5˚ 5 ■ Features • Two elements incorporated into one package (Base-coupled transistors) • Reduction of the mounting area and assembly cost by one half Unit: mm 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 For general amplification 3 2 (0.65) (0.65) di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 1.3±0.1 2.0±0.1 ■ Basic Part Number Parameter Symbol Rating Unit Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) VCBO VCEO VEBO −60 −50 −7 V V V Collector current IC −100 mA Peak collector current ICP −200 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1: Emitter (Tr1) 2: Base 3: Emitter (Tr2) EIAJ: SC-88A 0.9±0.1 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.9+0.2 –0.1 10˚ • 2SB0709A (2SB709A) × 2 4: Collector (Tr2) 5: Collector (Tr1) SMini5-G1 Package Marking Symbol: 7R Internal Connection 4 5 Tr1 2 3 ue 1 Tr2 Parameter ce /D isc on tin ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol Conditions Min Typ Max Unit VCBO IC = −10 µA, IE = 0 −60 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 V ICBO VCB = −20 V, IE = 0 − 0.1 µA ICEO VCE = −10 V, IB = 0 −100 µA hFE VCE = −10 V, IC = −2 mA 160 460 hFE(Small/ VCE = −10 V, IC = −2 mA 0.50 en an Collector-base voltage (Emitter open) int Collector-base cutoff current (Emitter open) Ma Collector-emitter cutoff current (Base open) Forward current transfer ratio hFE ratio * V 0.99 Large) Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob IC = −100 mA, IB = −10 mA − 0.3 − 0.5 V VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz VCB = −10 V, IE = 0, f = 1 MHz 2.7 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00155BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). XP02401 PT Ta IC VCE −50 −250 µA −40 −200 µA −30 −150 µA −40 −30 M Di ain sc te on na tin nc ue e/ d 150 VCE = −5 V Ta = 25°C IB = − 300 µA Collector current IC (mA) Collector current IC (mA) 200 −60 Ta = 25°C −50 Total power dissipation PT (mW) IC I B −60 250 100 50 −100 µA −10 0 40 80 120 160 IB VBE −400 −12 −240 0 −16 25°C Collector current IC (mA) Base current IB (µA) Ta = 75°C −25°C −160 −250 −200 −150 −100 −80 −1.2 −1.6 ce /D isc on tin Base-emitter voltage VBE (V) hFE IC 600 an VCE = –10 V Ma int Transition frequency fT (MHz) 300 Ta = 75°C 25°C −25°C 200 100 0 −0.4 −0.8 −1.2 −1.6 −2.0 −10 −102 Collector current IC (mA) 2 −103 −400 VCE(sat) IC IC / IB = 10 −1 −10−3 −1 Ta = 75°C 25°C −25°C VCB = −10 V Ta = 25°C 120 100 80 60 40 0 10−1 1 10 Emitter current IE (mA) SJJ00155BED −10 −102 −103 Collector current IC (mA) Base-emitter voltage VBE (V) 20 0 −1 −300 −10 fT I E 160 140 en 500 400 0 Collector output capacitance C (pF) (Common base, input open circuited) ob −0.8 ue −0.4 −200 Base current IB (µA) −10−2 −40 −50 −100 −10−1 −120 0 0 (V) VCE = −5 V −200 −300 0 −8 IC VBE VCE = −5 V Ta = 25°C −350 −4 0 Collector-emitter voltage VCE Ambient temperature Ta (°C) −10 −50 µA Collector-emitter saturation voltage VCE(sat) (V) 0 −20 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 Forward current transfer ratio hFE −20 102 Cob VCB 8 f = 1 MHz IE = 0 Ta = 25°C 7 6 5 4 3 2 1 0 −1 −10 −102 Collector-base voltage VCB (V) This product complies with the RoHS Directive (EU 2002/95/EC). XP02401 NF IE NF IE 16 Noise figure NF (dB) 4 3 VCE = −5 V f = 270 Hz Ta = 25°C 2 hfe 102 14 12 f = 100 Hz 10 8 1 kHz hoe (µS) M Di ain sc te on na tin nc ue e/ d Noise figure NF (dB) VCB = −5 V R = 50 kΩ 18 T g = 25°C a VCB = −5 V f = 1 kHz Rg = 2 kΩ Ta = 25°C 5 h parameter IE 20 h parameter 6 10 10 kHz 6 hie (kΩ) 4 1 2 1 10 h parameter VCE hfe IE = 2 mA f = 270 Hz Ta = 25°C hoe (µS) 10 hre (× 10−4) hie (kΩ) −10 −102 1 (V) 10 1 10−1 1 10 Emitter current IE (mA) int en an ce /D isc on tin Collector-emitter voltage VCE Ma h parameter 102 1 −1 0 10−1 Emitter current IE (mA) Emitter current IE (mA) hre (× 10−4) di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 10−1 ue 0 10−2 SJJ00155BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.