Transistors MSG43004 SiGe HBT type For low-noise RF amplifier 3 • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Optimal size reduction and high level integration for ultra-small packages 2 1 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 9 V Collector-emitter voltage (Base open) VCEO 6 V Emitter-base voltage (Collector open) VEBO 1 V Collector current IC 100 mA Collector power dissipation * PC 100 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.25±0.05 1 0.50±0.05 ■ Absolute Maximum Ratings Ta = 25°C 0.15±0.05 0.05±0.03 0.35±0.01 ■ Features 0.60±0.05 Unit: mm 3 0.65±0.01 2 0.05±0.03 1: Base 2: Emitter 3: Collector ML3-N2 Package Marking Symbol: 5Y Note) *: Copper plate at the collector is 5.0 mm2 on substrate at 10 mm × 12 mm × 0.8 mm. ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base cutoff current (Emitter open) ICBO Collector-emitter cutoff current (Base open) ICEO Emitter-base cutoff current (Collector open) IEBO VEB = 1 V, IC = 0 Forward current transfer ratio hFE VCE = 3 V, IC = 15 mA fT VCE = 3 V, IC = 30 mA, f = 2 GHz S21e2 VCE = 3 V, IC = 30 mA, f = 2 GHz Transition frequency * Forward transfer gain * Noise figure * Collector output capacitance (Common base, input open circuited) * Conditions Min Typ Max Unit VCB = 9 V, IE = 0 1 µA VCE = 6 V, IB = 0 1 µA 1 µA 220 100 6.0 17 GHz 9.0 dB NF VCE = 3 V, IC = 15 mA, f = 2 GHz 1.4 2.0 dB Cob VCB = 3 V, IE = 0, f = 1 MHz 0.6 0.9 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Observe precautions for handling. Electrostatic sensitive devices. 3. *: Verified by random sampling Publication date: November 2004 SJC00320BED 1 MSG43004 PC Ta IC VCE hFE IC 180 14 120 VCE = 3 V 80 60 40 20 0 80 µA 70 µA 10 60 µA 8 50 µA 40 µA 6 30 µA 4 20 µA 2 0 40 80 0 120 1 3 4 5 6 60 40 0 0 20 15 10 5 10 100 10 100 GP I C 15 f = 1 MHz Ta = 25°C VCE = 3 V f = 2 GHz 10 5 0 −5 0.1 2 0 4 6 8 10 −10 0.1 12 1 10 100 Collector-base voltage VCB (V) Collector current IC (mA) NF IC S11 , S22 S21e2 IC 7 VCE = 3 V f = 2 GHz 1 Collector current IC (mA) Power gain GP (dB) Collector output capacitance C (pF) (Common base, input open circuited) ob Transition frequency fT (GHz) 2 1 Collector current IC (mA) 6 VCE = 3 V IC = 30 mA 1.0 VCE = 3 V f = 2 GHz 0.5 2.0 2 Forward transfer gain S21e (dB) 80 Cob VCB VCE = 3 V f = 2 GHz 12 100 0 0 fT I C 14 120 Collector-emitter voltage VCE (V) 25 1 140 20 10 µA Ambient temperature Ta (°C) 0 160 Forward current transfer ratio hFE 100 Collector current IC (mA) Collector power dissipation PC (mW) IB = 10 µA step 12 Noise figure NF (dB) 10 8 6 4 5 S11 4 0 0.3 1.0 S22 2 2 1 0 0 0.1 −2.0 − 0.5 1 10 Collector current IC (mA) 2 100 ∞ 3.0 3 1 10 Collector current IC (mA) SJC00320BED 100 −1.0 MSG43004 S21e2 , S12e2 f 50 30 2 Forward transfer gain S21e , 2 Reverse transfer gain S12e (dB) 40 20 10 2 S21e 0 −10 −20 2 S12e −30 −40 −50 0 0.5 1.0 1.5 2.0 2.5 3.0 Frequency f (GHz) SJC00320BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. 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