Transistors 2SC5939 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 ■ Features 2 0.15 min. 1 0.23+0.05 –0.02 0.15 min. 5˚ 0.80±0.05 1.20±0.05 3 • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob and reverse transfer capacitance (Common base) Crb • SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ Rating Unit VCBO 15 V Collector-emitter voltage (Base open) VCEO 10 V Emitter-base voltage (Collector open) VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.15 max. Symbol 0 to 0.01 Parameter Collector-base voltage (Emitter open) 0.52±0.03 ■ Absolute Maximum Ratings Ta = 25°C 1: Base 2: Emitter 3: Collector SSSMini3-F1 Package Marking Symbol: 1S ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 10 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 3 V Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 Forward current transfer ratio hFE VCE = 4 V, IC = 5 mA hFE ratio ∆hFE VCE = 4 V, IC = 100 µA 1 µA 75 400 0.75 1.6 VCE = 4 V, IC = 5 mA Collector-emitter saturation voltage Transition frequency VCE(sat) fT IC = 20 mA, IB = 4 mA VCE = 4 V, IE = −5 mA, f = 200 MHz 1.4 1.9 0.5 V 2.7 GHz Collector output capacitance (Common base, input open circuited) Cob VCB = 4 V, IE = 0, f = 1 MHz 1.4 pF Reverse transfer capacitance (Common base) Crb VCB = 4 V, IE = 0, f = 1 MHz 0.45 pF 11 ps Collector-base parameter rbb' • CC VCB = 4 V, IE = −5 mA, f = 31.9 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: April 2004 SJC00306AED 1 2SC5939 PC Ta IC VCE 50 Ta = 25°C 40 80 60 40 20 400 µA 35 300 µA 30 25 200 µA 20 15 100 µA 10 25°C Ta = 85°C 30 20 −25°C 10 20 40 60 80 0 100 120 140 0 0 2 12 0 0.2 0.4 10 Collector current IC (mA) 120 25°C Ta = 85°C 100 −25°C 80 60 40 20 0 0.1 1 10 Collector current IC (mA) SJC00306AED 0.6 0.8 1 1.2 Base-emitter voltage VBE (V) Cob VCB VCE = 4 V Forward current transfer ratio hFE −25°C 25°C 1 10 hFE IC 0.1 0.01 0.1 8 140 IC/IB = 5 Ta = 85°C 6 Collector-emitter voltage VCE (V) VCE(sat) IC 1 4 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 Ambient temperature Ta (°C) Collector-emitter saturation voltage VCE(sat) (V) VCE = 4 V 40 5 0 2 IB = 500 µA Collector current IC (mA) 100 IC VBE 50 45 Collector current IC (mA) Collector power dissipation PC (mW) 120 100 10 1 f = 1 MHz Ta = 25°C 0 2 4 6 8 10 12 14 Collector-base voltage VCB (V) 16 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP