Transistor 2SD1198, 2SD1198A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification ■ Features ■ Absolute Maximum Ratings Parameter 2SD1198 base voltage 2SD1198A Collector to 2SD1198 emitter voltage 2SD1198A * Ratings Unit 30 3 2 2.5 25 VEBO Peak collector current Collector current Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 5 V ICP 1.5 A IC 1 A 1:Base 2:Collector 3:Emitter 2SD1198A Emitter cutoff current ICBO IEBO Collector to base 2SD1198 voltage 2SD1198A Collector to emitter 2SD1198 voltage 2SD1198A Emitter to base voltage 1.0 C B Conditions ≈200Ω min typ max 100 VCB = 45V, IE = 0 100 VEB = 4V, IC = 0 VCBO IC = 100µA, IB = 0 VCEO IC = 1mA, IB = 0 VEBO IE = 100µA, IC = 0 *1 VCE = 10V, IC = 1A*2 Forward current transfer ratio hFE VCE(sat) IC = 1A, IB = 1mA*2 Base to emitter saturation voltage VBE(sat) IC = 1A, IB = 1mA*2 Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 100 30 Rank classification Rank hFE Q R Unit nA nA V 60 25 V 50 5 V 4000 40000 1.8 2.2 150 V V MHz *2 FE E VCB = 25V, IE = 0 Collector to emitter saturation voltage *1h 4.5±0.1 Internal Connection (Ta=25˚C) Symbol 2SD1198 2.5 EIAJ:SC–71 M Type Mold Package Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion current 1 V 50 Emitter to base voltage Collector cutoff 0.45±0.05 V 60 VCEO Parameter 4.1±0.2 0.55±0.1 VCBO ■ Electrical Characteristics 2.4±0.2 2.0±0.2 3.5±0.1 0. 7 0.4 0.85 (Ta=25˚C) Symbol Collector to 1.0 1.25±0.05 ● 2.5±0.1 1.5 R0.9 R0.9 R ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 40000. A shunt resistor is omitted from the driver. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 ● 6.9±0.1 1.5 Pulse measurement S 4000 ~ 10000 8000 ~ 20000 16000 ~ 40000 1 Transistor 2SD1198, 2SD1198A VCE(sat) — IC 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 100 IC/IB=1000 30 10 3 25˚C –25˚C 0.3 0.1 0.03 0.01 0.01 003 0.1 24 VCE=10V Collector output capacitance Cob (pF) Forward current transfer ratio hFE 1 3 10 Ta=75˚C 25˚C 104 –25˚C 103 102 IE=0 f=1MHz Ta=25˚C 20 16 12 8 4 0 0.1 0.3 1 3 10 1 3 10 30 IC/IB=1000 30 10 25˚C 3 Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.01 0.01 003 0.1 0.3 1 3 Collector current IC (A) Cob — VCB Collector current IC (A) 2 0.3 Collector current IC (A) hFE — IC 10 0.01 0.03 Ta=75˚C 1 Ambient temperature Ta (˚C) 105 VBE(sat) — IC 100 Base to emitter saturation voltage VBE(sat) (V) Collector power dissipation PC (W) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.2 100 Collector to base voltage VCB (V) 10