Si4102DY Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () ID (A) 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 d • TrenchFET® Power MOSFET • 100 % UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Qg (Typ.) 4.6 nC APPLICATIONS • High Frequency Boost Converter • LED Backlight for LCD TV SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Ordering Information: Si4102DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit 100 ± 20 3.8 3 ID TC = 25 °C TA = 25 °C IS Single Avalanche Current Single Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Continuous Source-Drain Diode Current Operating Junction and Storage Temperature Range V 2.7a, b 2.1a, b 8 4 IDM Pulsed Drain Current Unit A 2a, b 6 1.8 4.8 3 A mJ W 2.4a, b 1.5a, b - 55 to 150 TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot (Drain) t 10 s Steady State Symbol RthJA RthJF Typical 42 Maximum 53 21 26 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 85 °C/W. d. Based on TC = 25 °C. Document Number: 69252 S13-0631-Rev. C, 25-Mar-13 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4102DY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 100 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 110 mV/°C - 7.5 2 4 V ± 100 nA VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 55 °C 10 VDS 5 V, VGS = 10 V 8 µA A VGS 10 V, ID = 2.7 A 0.130 0.158 VGS 6 V, ID = 2.5 A 0.145 0.175 VDS = 10 V, ID = 2.7 A 7 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance 370 VDS = 50 V, VGS = 0 V, f = 1 MHz tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time VDS = 50 V, VGS = 10 V, ID = 2.7 A VDS = 50 V, VGS = 6 V, ID = 2.7 A 7 1.7 nC 2 f = 1 MHz VDD = 50 V, RL = 23.8 ID 2.1 A, VGEN = 6 V, Rg = 1 3 10 15 10 15 15 10 15 td(on) 10 15 VDD = 50 V, RL = 23.8 ID 2.1 A, VGEN = 10 V, Rg = 1 tf Fall Time 11 10 td(off) Turn-Off Delay Time 7.1 4.6 tf tr Rise Time pF 20 td(on) Turn-On Delay Time 40 10 15 12 20 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 4 8 IS = 2.1 A, VGS = 0 V IF = 2.1 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 50 80 ns 75 120 nC 28 22 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 69252 S13-0631-Rev. C, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4102DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 8 5V VGS = 10 V thru 6 V 6 I D - Drain Current (A) I D - Drain Current (A) 6 4 4 TC = 125 °C 2 2 25 °C 4V 0 0.0 - 55 °C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 1 2 Output Characteristics 5 6 50 60 Transfer Characteristics 500 0.25 Ciss 400 0.20 VGS = 6.0 V C - Capacitance (pF) R DS(on) - On-Resistance () 4 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.15 VGS = 10 V 0.10 300 200 Crss 100 0.05 Coss 0 0.00 0 2 4 6 0 8 10 20 30 40 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current 10 2.2 ID = 2.7 A VGS = 10 V ID = 2.7 A 2.0 VDS = 50 V 6 VDS = 80 V 4 1.8 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 3 1.6 1.4 1.2 1.0 2 0.8 0 0 2 4 6 8 0.6 - 50 - 25 Document Number: 69252 S13-0631-Rev. C, 25-Mar-13 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge 0 On-Resistance vs. Junction Temperature For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4102DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.4 R DS(on) - On-Resistance () I S - Source Current (A) ID = 2.7 A TJ = 150 °C 0.3 0.2 0.1 TJ = 25 °C 1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4.0 50 3.6 40 3.2 30 ID = 250 µA 8 10 20 10 2.4 2.0 - 50 6 On-Resistance vs. Gate-to-Source Voltage Power (W) VGS(th) (V) Source-Drain Diode Forward Voltage 2.8 4 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 1000 10 I D - Drain Current (A) Limited by R DS(on)* 100 µs 1 1 ms 10 ms 100 ms 0.1 1s TA = 25 °C Single Pulse 10 s BVDSS Limited 0.01 0.1 1 * VGS 10 DC 100 1000 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 69252 S13-0631-Rev. C, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4102DY Vishay Siliconix 5 5 4 4 Power Dissipation (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3 2 3 2 1 1 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69252 S13-0631-Rev. C, 25-Mar-13 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4102DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 75 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69252. www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 69252 S13-0631-Rev. C, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000