This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC5845 Silicon NPN epitaxial planar type For general amplification Unit: mm 0.40+0.10 –0.05 ■ Features Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO PC Junction temperature Tj Storage temperature Tstg 7 V 100 mA 200 mA 200 mW 150 °C −55 to +150 °C 0.4±0.2 10˚ 1.1+0.2 –0.1 Rating 1.1+0.3 –0.1 Symbol 0 to 0.1 Parameter ICP 5˚ 2.90+0.20 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Collector power dissipation 2.8+0.2 –0.3 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 1.9±0.1 Peak collector current (0.65) 2 1 (0.95) (0.95) IC 1.50+0.25 –0.05 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing Collector current 0.16+0.10 –0.06 3 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: 7M ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol VCBO IC = 10 µΑ, IE = 0 60 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 µΑ, IC = 0 7 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 µA hFE VCE = 10 V, IC = 2 mA 460 en an ce /D isc on tin ue Parameter Collector-base voltage (Emitter open) int Forward current transfer ratio VCE(sat) Collector output capacitance (Common base, input open circuited) Cob Ma Collector-emitter saturation voltage Transition frequency fT Conditions Min Typ Max Unit V 160 IC = 100 mA, IB = 10 mA 0.1 VCB = 10 V, IE = 0, f = 1 MHz 2.2 pF VCB = 10 V, IE = −2 mA, f = 200 MHz 100 MHz 0.3 V Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: August 2003 SJC00297AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SC5845 PC Ta IC VCE 240 IC I B 140 50 VCE = 10V Ta = 25°C 120 Collector current IC (mA) 40 160 120 140 µA 120 µA 30 100 µA 80 µA Collector current IC (mA) IB = 160 µA 200 100 80 60 M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (mW) Ta = 25°C 80 20 60 µA 40 40 40 µA 10 20 40 80 120 160 Ambient temperature Ta (°C) IC VBE Base current IB (mA) Ta = 75°C –25°C 60 25°C 40 20 0 0.2 0.4 0.6 0.8 1.0 1.2 10 12 2.5 2.0 1.5 1.0 VCE = 10V en an Ta = 75°C 300 int 25°C Ma –25°C 200 150 100 50 10 0 0 ce /D isc on tin hFE IC 350 Forward current transfer ratio hFE 8 0.5 Base-emitter voltage VBE (V) 100 Collector current IC (mA) 2 6 VCE = 10V Ta = 25°C ue Collector current IC (mA) 80 1 4 3.0 100 0 2 0 0.2 1 000 0.2 0.4 0.6 0.8 Base-emitter voltage VBE (V) Cob VCB f = 1 MHz Ta = 25°C 0 8 16 24 32 Collector-base voltage VCB SJC00297AED 40 (V) 0.6 0.8 1.0 VCE(sat) IC 1 IC / IB = 10 Ta = 75°C 0.1 –25°C 25°C 0.01 1 10 Collector current IC (mA) 10 1 0.4 Base current IB (mA) IB VBE 3.5 VCE = 10V 250 0 0 Collector-emitter voltage VCE (V) 120 0 0 Collector-emitter saturation voltage VCE(sat) (V) 0 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 20 µA 100 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.