Transistors 2SB0788 (2SB788) Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SD0958 (2SD958) Unit: mm (1.0) 4.1±0.2 2.0±0.2 (0.85) ■ Absolute Maximum Ratings Ta = 25°C 0.45±0.05 Parameter Symbol Rating Unit VCBO −120 V Collector-emitter voltage (Base open) VCEO −120 V VEBO −7 V Collector current IC −20 mA Peak collector current ICP −50 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 3 2 (2.5) 1.25±0.05 0.55±0.1 Collector-base voltage (Emitter open) Emitter-base voltage (Collector open) 4.5±0.1 R 0.9 R 0.7 2.4±0.2 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (1.0) (1.5) 3.5±0.1 (0.4) 6.9±0.1 (1.5) 1.0±0.1 ■ Features 2.5±0.1 1 1: Base 2: Collector 3: Emitter M-A1 Package (2.5) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −120 Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −120 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 V Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 −100 nA Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 −1 µA hFE VCE = −2 V, IC = −2 A Forward current transfer ratio * Collector-emitter saturation voltage Noise voltage VCE(sat) NV Conditions Min Typ Max Unit V 520 IC = −20 mA, IB = −2 mA − 0.6 V VCE = −40 V, IC = −1 mA, GV = 80 dB Rg = 100 kΩ, Function = FLAT 150 mV 180 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R hFE 180 to 360 260 to 520 Note) The part number in the parenthesis shows conventional part number. Publication date: January 2003 SJC00055BED 1 2SB0788 IC VCB Collector current IC (mA) 25°C 300 200 100 Ta = 75°C −40 −25°C −30 −20 0 20 40 60 80 100 120 140 160 0 − 0.4 − 0.8 hFE IC −1.2 Transition frequency fT (MHz) Forward current transfer ratio hFE 500 Ta = 75°C 25°C −25°C 200 100 −1.6 −2.0 −1 −10 −100 VCB = −10 V Ta = 25°C 240 200 160 120 80 0 0.1 1 10 Emitter current IE (mA) Collector current IC (mA) NV IC 120 Noise voltage NV (mV) 100 80 VCE = −10 V GV = 80 dB Function = FLAT Rg = 100 kΩ 60 22 kΩ 40 4.7 kΩ 20 0 − 0.01 − 0.1 −1 Collector current IC (mA) 2 Ta = 75°C −25°C − 0.01 − 0.1 −1 −10 −100 Collector current IC (mA) 40 0 − 0.1 25°C Cob VCB 280 300 −1 fT I E 320 VCE = −5 V 400 −10 Base-emitter voltage VBE (V) Ambient temperature Ta (°C) 600 IC / IB = 10 − 0.1 −10 0 −100 SJC00055BED 100 Collector output capacitance C (pF) (Common base, input open circuited) ob Collector power dissipation PC (mW) VCE = −5 V −50 400 0 VCE(sat) IC −60 Collector-emitter saturation voltage VCE(sat) (V) PC Ta 500 5 IE = 0 f = 1 MHz Ta = 25°C 4 3 2 1 0 −1 −10 −100 Collector-base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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