Transistors 2SD0601A (2SD601A) Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0709A (2SB709A) Unit: mm 0.40+0.10 –0.05 ■ Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • High foward current transfer ratio hFE • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.9±0.1 (0.65) 2 1 (0.95) (0.95) 2.90+0.20 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 7 V Collector current IC 100 mA Peak collector current ICP 200 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 10˚ 1.1+0.2 –0.1 Rating 1.1+0.3 –0.1 Symbol 0 to 0.1 Parameter 1: Base 2: Emitter 3: Collector Mini3-G1 Package Marking Symbol: Z ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V Collector-base cut-off current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA ICEO VCE = 10 V, IB= 0 100 µA 460 Forward current transfer ratio Transition frequency Typ Max Unit V VCE = 10 V, IC = 2 mA 160 VCE = 2 V, IC = 100 mA 90 VCE(sat) IC = 100 mA, IB = 10 mA 0.1 VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz VCE = 10 V, IC = 1 mA, GV = 80 dB 110 mV fT Noise voltage Min hFE2 * hFE1 Collector-emitter saturation voltage Conditions NV 0.3 V Rg = 100 kΩ, Function = FLAT Collector output capacitance (Common base, input open circuited) VCB = 10 V, IE = 0, f = 1 MHz Cob 3.5 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S No-rank hFE1 160 to 260 210 to 340 290 to 460 160 to 460 Marking symbol ZQ ZR ZS Z Product of no-rank is not classified and have no marking symbol for rank. Note) The part number in the parenthesis shows conventional part number. Publication date: April 2003 SJC00190BED 1 2SD0601A PC Ta IC VCE Ta = 25°C 200 120 80 40 1 000 140 µA 40 120 µA 100 µA 30 80 µA 60 µA 20 80 120 0 160 0 2 6 8 VCE = 10 V Ta = 25°C Collector current IC (mA) 120 25°C −25°C 40 160 120 80 40 0.8 1.2 1.6 0 2.0 0 hFE IC Transition frequency fT (MHz) 500 Ta = 75°C 25°C −25°C 200 100 0 0.1 1 600 10 Collector current IC (mA) 100 800 1 000 IC / IB = 10 1 25°C 0.1 Ta = 75°C −25°C 0.01 0.1 1 10 100 240 VCB = 10 V Ta = 25°C 180 120 60 VCE = 10 V GV = 80 dB 200 Function = FLAT Ta = 25°C 160 Rg = 100 kΩ 120 80 22 kΩ 4.7 kΩ 40 −1 1.0 Collector current IC (mA) 240 0 − 0.1 0.8 NV IC 300 VCE = 10 V 0.6 10 fT I E 600 300 400 0.4 100 Base current IB (µA) Base-emitter voltage VBE (V) 400 200 0.2 Base-emitter voltage VBE (V) Noise voltage NV (mV) 0.4 0 VCE(sat) IC 200 0 0 10 IC I B 160 0 4 240 VCE = 10 V 80 400 Collector-emitter voltage VCE (V) IC VBE Ta = 75°C 600 200 20 µA Collector-emitter saturation voltage VCE(sat) (V) 40 800 40 µA 10 0 Base current IB (µA) 160 200 Collector current IC (mA) VCE = 10 V Ta = 25°C 50 Ambient temperature Ta (°C) Forward current transfer ratio hFE 1 200 IB = 160 µA 0 2 IB VBE 60 Collector current IC (mA) Collector power dissipation PC (mW) 240 −10 Emitter current IE (mA) SJC00190BED −100 0 10 100 Collector current IC (µA) 1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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