ETC 2SD0601A|2SD601A

Transistors
2SD0601A (2SD601A)
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB0709A (2SB709A)
Unit: mm
0.40+0.10
–0.05
■ Features
0.16+0.10
–0.06
0.4±0.2
5˚
1.50+0.25
–0.05
2.8+0.2
–0.3
3
• High foward current transfer ratio hFE
• Low collector to emitter saturation voltage VCE(sat)
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
1.9±0.1
(0.65)
2
1
(0.95) (0.95)
2.90+0.20
–0.05
■ Absolute Maximum Ratings Ta = 25°C
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
7
V
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
10˚
1.1+0.2
–0.1
Rating
1.1+0.3
–0.1
Symbol
0 to 0.1
Parameter
1: Base
2: Emitter
3: Collector
Mini3-G1 Package
Marking Symbol: Z
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
60
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 0
7
V
Collector-base cut-off current (Emitter open)
ICBO
VCB = 20 V, IE = 0
0.1
µA
ICEO
VCE = 10 V, IB= 0
100
µA
460

Forward current transfer ratio
Transition frequency
Typ
Max
Unit
V
VCE = 10 V, IC = 2 mA
160
VCE = 2 V, IC = 100 mA
90
VCE(sat)
IC = 100 mA, IB = 10 mA
0.1
VCB = 10 V, IE = −2 mA, f = 200 MHz
150
MHz
VCE = 10 V, IC = 1 mA, GV = 80 dB
110
mV
fT
Noise voltage
Min
hFE2
*
hFE1
Collector-emitter saturation voltage
Conditions
NV
0.3
V
Rg = 100 kΩ, Function = FLAT
Collector output capacitance
(Common base, input open circuited)
VCB = 10 V, IE = 0, f = 1 MHz
Cob
3.5
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
No-rank
hFE1
160 to 260
210 to 340
290 to 460
160 to 460
Marking symbol
ZQ
ZR
ZS
Z
Product of no-rank is not classified and have no marking symbol for rank.
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2003
SJC00190BED
1
2SD0601A
PC  Ta
IC  VCE
Ta = 25°C
200
120
80
40
1 000
140 µA
40
120 µA
100 µA
30
80 µA
60 µA
20
80
120
0
160
0
2
6
8
VCE = 10 V
Ta = 25°C
Collector current IC (mA)
120
25°C
−25°C
40
160
120
80
40
0.8
1.2
1.6
0
2.0
0
hFE  IC
Transition frequency fT (MHz)
500
Ta = 75°C
25°C
−25°C
200
100
0
0.1
1
600
10
Collector current IC (mA)
100
800
1 000
IC / IB = 10
1
25°C
0.1
Ta = 75°C
−25°C
0.01
0.1
1
10
100
240
VCB = 10 V
Ta = 25°C
180
120
60
VCE = 10 V
GV = 80 dB
200 Function = FLAT
Ta = 25°C
160
Rg = 100 kΩ
120
80
22 kΩ
4.7 kΩ
40
−1
1.0
Collector current IC (mA)
240
0
− 0.1
0.8
NV  IC
300
VCE = 10 V
0.6
10
fT  I E
600
300
400
0.4
100
Base current IB (µA)
Base-emitter voltage VBE (V)
400
200
0.2
Base-emitter voltage VBE (V)
Noise voltage NV (mV)
0.4
0
VCE(sat)  IC
200
0
0
10
IC  I B
160
0
4
240
VCE = 10 V
80
400
Collector-emitter voltage VCE (V)
IC  VBE
Ta = 75°C
600
200
20 µA
Collector-emitter saturation voltage VCE(sat) (V)
40
800
40 µA
10
0
Base current IB (µA)
160
200
Collector current IC (mA)
VCE = 10 V
Ta = 25°C
50
Ambient temperature Ta (°C)
Forward current transfer ratio hFE
1 200
IB = 160 µA
0
2
IB  VBE
60
Collector current IC (mA)
Collector power dissipation PC (mW)
240
−10
Emitter current IE (mA)
SJC00190BED
−100
0
10
100
Collector current IC (µA)
1 000
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and semiconductors described in this material
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Consult our sales staff in advance for information on the following applications:
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
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2002 JUL