ETC 2SB0745|2SB745

Transistors
2SB0745, 2SB0745A (2SB745, 2SB745A)
Silicon PNP epitaxial planar type
For low-frequency and low-noise amplification
Unit: mm
2SB0745
(1.0)
R 0.9
Symbol
Rating
Unit
VCBO
−35
V
2.4±0.2
(0.85)
0.45±0.05
0.55±0.1
−55
2SB0745A
Collector-emitter voltage 2SB0745
(Base open)
2SB0745A
VCEO
Emitter-base voltage (Collector open)
−35
V
−55
3
2
(2.5)
VEBO
−5
V
Collector current
IC
−50
mA
Peak collector current
ICP
−200
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
4.1±0.2
2.0±0.2
R 0.7
4.5±0.1
3.5±0.1
(0.4)
(1.5)
1.25±0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter
(1.0)
(1.5)
1.0±0.1
• Low noise voltage NV
• High forward current transfer ratio hFE
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Collector-base voltage
(Emitter open)
2.5±0.1
6.9±0.1
■ Features
1
(2.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
VCBO
IC = −10 µA, IE = 0
VCEO
IC = −2 mA, IB = 0
VEBO
IE = −10 µA, IC = 0
Base-emitter voltage
VBE
VCE = −1 V, IC = −100 mA
Collector-base cutoff current (Emitter open)
ICBO
VCB = −10 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = −10 V, IB = 0
Forward current transfer ratio *
hFE
VCE = −5 V, IC = −2 mA
Collector-base voltage
(Emitter open)
2SB0745
Collector-emitter voltage
(Base open)
2SB0745
Transition frequency
VCE(sat)
Unit
V
−35
V
VCE = −10 V, IC = −1 mA, GV = 80 dB
Rg = 100 kΩ, Function = FLAT
NV
−5
V
− 0.7
180
IC = −100 mA, IB = −10 mA
VCB = −5 V, IE = 2 mA, f = 200 MHz
fT
Noise voltage
Max
−55
2SB0745A
Collector-emitter saturation voltage
Typ
−35
−55
2SB0745A
Emitter-base voltage (Collector open)
Min
−1.0
V
− 0.1
µA
−1
µA
700

− 0.6
150
V
MHz
150
mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE
180 to 360
260 to 520
360 to 700
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2003
SJC00050BED
1
2SB0745, 2SB0745A
PC  Ta
IC  VCE
IC  I B
−160
500
−160
Ta = 25°C
Collector current IC (mA)
300
200
−120
−300 µA
−250 µA
−100
−200 µA
−80
−150 µA
−60
−100 µA
−40
Collector current IC (mA)
Collector power dissipation PC (mW)
IB = −350 µA
400
−120
−80
−40
100
−50 µA
−20
20
40
60
0
80 100 120 140 160
−2
0
Ambient temperature Ta (°C)
−6
−8
−10
VCE = −5 V
Ta = 25°C
Collector current IC (mA)
Base current IB (µA)
−600
−400
−200
VCE = −5 V
25°C
Ta = 75°C
− 0.2
− 0.4
− 0.6
− 0.8
−25°C
−80
−60
−40
0
− 0.4
− 0.8
hFE  IC
VCE = −5 V
Ta = 75°C
300
25°C
−25°C
200
100
0
− 0.1
−1
−10
Collector current IC (mA)
−100
−1.6
−2.0
−1
Ta = 75°C
25°C
−25°C
− 0.01
− 0.1
−10
−100
Cob  VCB
VCB = −5 V
Ta = 25°C
300
200
100
1
−1
Collector current IC (mA)
400
0
0.1
− 0.5
−10
fT  I E
500
400
−1.2
500
Transition frequency fT (MHz)
Forward current transfer ratio hFE
600
− 0.4
IC / IB = 10
Base-emitter voltage VBE (V)
Base-emitter voltage VBE (V)
− 0.3
−100
− 0.1
0
−1.0
− 0.2
Base current IB (mA)
VCE(sat)  IC
−20
0
− 0.1
0
IC  VBE
−120
−100
0
0
−12
Collector-emitter voltage VCE (V)
IB  VBE
−800
−4
Collector-emitter saturation voltage VCE(sat) (V)
0
10
Emitter current IE (mA)
SJC00050BED
100
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
0
2
VCE = −5 V
Ta = 25°C
−140
20
IE = 0
f = 1 MHz
Ta = 25°C
16
12
8
4
0
− 0.1
−1
−10
−100
Collector-base voltage VCB (V)
2SB0745, 2SB0745A
NV  VCE
NV  VCE
NV  IC
160
160
80
22 kΩ
Noise voltage NV (mV)
Rg = 100 kΩ
Rg = 100 kΩ
200
160
120
80
22 kΩ
40
4.7 kΩ
120
Rg = 100 kΩ
80
22 kΩ
40
4.7 kΩ
4.7 kΩ
−10
0
−1
−100
Collector-emitter voltage VCE (V)
NV  Rg
NV  Rg
160
VCE = −10 V
GV = 80 dB
Function = RIAA
Noise voltage NV (mV)
160
Rg = 100 kΩ
22 kΩ
40
0
− 0.01
120
80
IC = −1 mA
40
− 0.5 mA
4.7 kΩ
− 0.1
Collector current IC (mA)
−1
0
240
200
160
120
80
IC = −2 mA
40
− 0.1 mA
0
1
−1
VCE = −10 V
GV = 80 dB
Function = RIAA
280
VCE = −10 V
GV = 80 dB
Function = FLAT
200
80
− 0.1
Collector current IC (mA)
240
120
0
− 0.01
−100
Collector-emitter voltage VCE (V)
NV  IC
280
−10
Noise voltage NV (mV)
0
−1
Noise voltage NV (mV)
VCE = −10 V
GV = 80 dB
Function = FLAT
240
120
40
IC = −1 mA
GV = 80 dB
Function = RIAA
280
Noise voltage NV (mV)
Noise voltage NV (mV)
IC = −1 mA
GV = 80 dB
Function = FLAT
10
100
Signal source resistance Rg (kΩ)
SJC00050BED
− 0.5 mA
− 0.1 mA
1
10
100
Signal source resistance Rg (kΩ)
3
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2002 JUL