2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications · Unit: mm 4-V gate drive · Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) · High forward transfer admittance: |Yfs| = 15 S (typ.) · Low leakage current: IDSS = −100 µA (max) (VDS = −100 V) · Enhancement-model: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -100 V Drain-gate voltage (RGS = 20 kW) VDGR -100 V Gate-source voltage VGSS ±20 V (Note 1) ID -18 Pulse (Note 1) IDP -72 Drain power dissipation (Tc = 25°C) PD 125 W JEDEC Single pulse avalanche energy (Note 2) EAS 937 mJ JEITA SC-97 Avalanche current IAR -18 A TOSHIBA 2-9F1B Repetitive avalanche energy (Note 3) EAR 12.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55 to150 °C DC Drain current A ― Weight: 0.74 g (typ.) Circuit Configuration Thermal Characteristics Characteristics Thermal resistance, channel to case 4 Symbol Max Unit Rth (ch-c) 1.0 °C/W 1 Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = -50 V, Tch = 25°C (initial), L = 3.56 mH, RG = 25 W, IAR = -18 A 3 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-09-11 2SJ620 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ¾ ¾ ±10 mA Drain cut-OFF current IDSS VDS = -100 V, VGS = 0 V ¾ ¾ -100 mA ID = -10 mA, VGS = 0 V -100 ¾ ¾ V VDS = -10 V, ID = -1 mA V Drain-source breakdown voltage V (BR) DSS Gate threshold voltage Vth Drain-source ON resistance RDS (ON) Forward transfer admittance ïYfsï Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time ¾ -2.0 ¾ 85 120 VGS = -10 V, ID = -9 A ¾ 63 90 VDS = -10 V, ID = -6 A 7 15 ¾ ¾ 2900 ¾ ¾ 480 ¾ ¾ 1000 ¾ ¾ 25 ¾ ¾ 45 ¾ ¾ 25 ¾ ¾ 170 ¾ ¾ 140 ¾ ¾ 90 ¾ ¾ 50 ¾ VDS = -10 V, VGS = 0 V, f = 1 MHz tr 0V VGS -10 V 4.7 W ton Fall time tf Turn-OFF time Duty < = 1%, tw = 10 ms toff Total gate charge (gate-source plus gate-drain) ID = -9 A VOUT RL = 5.55 W Turn-ON time Switching time -0.8 VGS = -4 V, ID = -9 A VDD ~ - -50 V Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd VDD ~ - -80 V, VGS = -10 V, ID = -18 A mW S pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ¾ ¾ ¾ -18 A Pulse drain reverse current IDRP ¾ ¾ ¾ -72 A (Note 1) Forward voltage (diode) VDSF IDR = -18 A, VGS = 0 V ¾ ¾ 1.7 V Reverse recovery time trr IDR = -18 A, VGS = 0 V, ¾ 220 ¾ ms Reverse recovery charge Qrr dIDR/dt = 50 A/ms ¾ 0.97 ¾ mC Marking ※ Lot Number J620 ※ Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-09-11 2SJ620 ID – VDS -8 -4.5 -10 -4 -6 -12 -3 -8 -2.5 -4 Common source Tc = 25°C pulse test -6 -5 -8 -40 -3.5 ID ID Drain current -10 -4.5 (A) Common source Tc = 25°C pulse test (A) -16 ID – VDS -50 Drain current -20 -4 -30 -3.5 -20 -3 -10 VGS = -2.5 V VGS = -2 V 0 0 -0.4 -0.8 -1.2 Drain-source voltage -1.6 VDS 0 0 -2.0 -4 (V) -8 Drain-source voltage ID – VGS -8 25 -4 100 -1 Tc = -55°C -2 -3 Gate-source voltage -4 VGS -2.5 -2.0 Drain-source voltage ID Drain current -12 (V) Common source VDS = -10 V pulse test 0 0 -1.5 ID = -18 A -1.0 -9 -0.5 -4.5 -2 (V) -4 -6 (S) Common source -12 VGS -14 -16 (V) Tc = -55°C 25 100 10 5 Common source Tc = 25°C Pulse test 0.1 VGS = -4 V RDS (ON) pulse test (W) VDS = -10 V Drain-source on resistance ïYfsï -10 RDS (ON) - ID 0.3 30 -8 Gate-source voltage ïYfsï - ID Forward transfer admittance (V) Common source Tc = 25°C pulse test 0 0 -5 100 50 VDS -20 VDS – VGS (A) -16 -16 -3.0 VDS -20 -12 -10 0.03 3 2 -1 -3 -5 -10 Drain current -30 ID -50 0.01 -1 -100 (A) -3 Drain current 3 -30 -10 ID -100 (A) 2002-09-11 2SJ620 IDR - VDS -100 (A) Common source pulse test 0.15 0.10 -4.5 VGS = -4 V Drain reverse current IDR -9 ID = -18 A 0.05 VGS = -10 V Common source -50 Tc = 25°C -30 pulse test -10 -10 -5 -5 -3 VGS = 0, 1 V -1.0 -1 -0.5 0 40 Case temperature 80 Tc 120 -0.3 0 160 0.4 (°C) 0.8 1.2 1.6 Drain-source voltage VDS -4 Gate threshold voltage Vth (V) (pF) Capacitance C 10000 5000 Ciss 3000 1000 Coss 500 -3 -2 -1 Crss -3 Drain-source voltage -10 VDS -30 0 -80 -100 40 80 120 160 (°C) Dynamic input/output characteristics -200 (V) (W) VDS 150 Drain-source voltage PD Drain power dissipation 0 (V) PD - Tc 100 50 80 Case temperature -40 Case temperature Tc 200 40 (V) Common source VDS = -10 V ID = -1 mA pulse test 30000 0 0 2.4 Vth - Tc Capacitance – VDS 50000 Common source 300 VGS = 0 V f = 1 MHz Tc = 25°C 100 -0.1 -0.3 -1 2.0 120 Tc -120 VGS -12 VDD = -80 V -80 VDS -8 -40 -20 -40 0 0 160 -16 Common source ID = -18 A Tc = 25°C pulse test (V) -40 -4 40 80 120 160 VGS 0 -80 Gate-source voltage Drain-source on resistance RDS (ON) (W) RDS (ON) - Tc 0.20 0 200 Total gate charge Qg (nC) (°C) 4 2002-09-11 2SJ620 rth - tw Normalized transient thermal impedance rth (t)/Rth (ch-a) 10 3 1 Duty = 0.5 0.3 0.2 0.1 0.05 PDM 0.1 t 0.02 Single pulse T 0.03 Duty = t/T Rth (ch-c) = 1.0°C/W 0.01 0.01 10 m 100 m 1m 10m Pulse width 100m tw 1 (S) EAS – Tch Safe operating area -1000 (mJ) 1000 100 ms * Avalanche energy EAS ID (A) -100 ID max (pulsed) * Drain current 10 ID max (continuous) 1 ms * -10 DC operation Tc = 25°C -1 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. -0.1 -0.1 -1 Drain-source voltage -100 VDS 600 400 200 0 25 VDSS max -10 800 50 75 100 125 Channel temperature (initial) Tch -1000 150 (°C) (V) BVDSS 15 V IAR -15 V VDD Test circuit RG = 25 W VDD = -50 V, L = 3.56 mH 5 VDS Wave form Ε AS = æ ö 1 B VDSS ÷ × L × I2 × ç çB ÷ 2 V VDSS DD è ø 2002-09-11 2SJ620 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-09-11