AON3408 N-Channel Enhancement Mode Field Effect Transistor General Description Features Features The AON3408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AON3408 is Pb-free (meets ROHS & Sony 259 specifications). VVDS (V)==30V 30V DS(V) 8.8A (V (VGS 10V) IDID==11A GS==10V) RRDS(ON) 14.5mΩ (VGS (VGS = 10V) = 10V) DS(ON)<<24mΩ RRDS(ON) < < 29mΩ 18mΩ (V (V = = 4.5V) 4.5V) DS(ON) GS GS RDS(ON) < 45mΩ (VGS = 2.5V) Rg,Ciss,Coss,Crss Tested DFN 3x3 Top View Bottom View D S D S D S D G D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A TA=25°C IDSM IDM TA=25°C ±12 V Junction and Storage Temperature Range W 1.9 -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. A 3.0 TJ, TSTG t ≤ 10s Steady-State Steady-State A 7.2 40 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Units V 8.5 TA=70°C Pulsed Drain Current B Power Dissipation Maximum 30 RθJA RθJL Typ 32 65 25 °C Max 42 100 35 Units °C/W °C/W °C/W www.aosmd.com AON3408 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, V GS=0V VDS=24V, V GS=0V 30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 0.7 VGS=4.5V, VDS=5V 40 TJ=125°C Output Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge 1.5 V 20 24 A 29 VGS=2.5V, ID=5A 34.5 45 VDS=5V, ID=8.8A DYNAMIC PARAMETERS Ciss Input Capacitance Coss 1 34 IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Crss nA 23 Forward Transconductance 26 mΩ S 0.72 900 VGS=0V, VDS=15V, f=1MHz uA 100 28 VSD IS 5 VGS=4.5V, ID=8A gFS Units V TJ=125°C VGS=10V, ID=8.8A Static Drain-Source On-Resistance Max 1 IDSS RDS(ON) Typ 1.0 V 4.0 A 1100 pF 88 pF 65 pF Ω VGS=0V, VDS=0V, f=1MHz 0.95 1.5 10 13 VGS=4.5V, VDS=15V, ID=8.5A 1.8 nC Qgd Gate Drain Charge 3.75 nC tD(on) Turn-On DelayTime 3.2 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=8.8A, dI/dt=100A/µs 16.8 Qrr Body Diode Reverse Recovery Charge IF=8.8A, dI/dt=100A/µs 8 VGS=10V, V DS=15V, R L=1.7Ω, RGEN=3Ω 3.5 ns 21.5 ns 2.7 ns 20 ns nC A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. 8.5 B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. 0.0 C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. 40 A E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in#DIV/0! a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev0:Oct. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON3408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 20 10V 50 40 3V 30 2.5V VGS=10V, ID=8.5A 10 VGS=4.5V, =2V VGS ID=8.5A 0 1 2 0 5 0 VDS (Volts) Maximum Body-Diode Continuous Current Figure 1: On-Region Characteristics 1 Normalized On-Resistance VGS=4.5V 24 1.5 VGS=10V, VDS=15V, ID=8.5A 22 20 1.2 V =10V, VDS=15V, RL=1.8Ω, 0.9 RGEN=3Ω GS VGS=10V 18 16 0.6 0 5 10 15 20 -50 IF=8.5A, dI/dt=100A/µs ID (A) IFDrain =8.5A, dI/dt=100A/µs Figure 3: On-Resistance vs. Current and Gate Voltage 45 26 1.5 0.72 2 2.5 1 3 -25 0 25 10 1.8 3.75 3.2 3.5 21.5 2.7 50 75 16.8 VGS=10V ID=8.8A 100 125 150 175 8.5 1.0E+01 0.0 55 1.0E+00 40 ID=8.8A 45 40 125°C #DIV/0! 1.0E-01 IS (A) 50 RDS(ON) (mΩ) 34.5 Temperature (°C) 8 Figure 4: On-Resistance vs. Junction Temperature 60 35 25°C 24 36.0 29.0 900 1100 88 65 ID=8A 0.95 1.5 VGS=4.5V 1.8 26 RDS(ON) (mΩ) 0.5 20 30.0 23 VGS(Volts) 4.5 Figure 2: Transfer Characteristics 28 Qg 1 40 4 VGS=2.5V, ID=5A V3DS=5V, ID4=11A 125°C 0.7 8 20 0 1 uA 5 100 nA 1.5 12 ID(A) ID (A) VDS=5V 16 4.5V A 125°C 1.0E-02 1.0E-03 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 25°C 25 1.0E-04 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 20 1.0E-05 THE RIGHT TO IMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES 25°COF ITS PRODUCTS. AOS RESERVES 15 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-06 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AON3408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1200 Capacitance (pF) 4 VGS (Volts) 1400 VDS=15V ID=8.8A 3 2 VGS=10V, ID=8.5A 1 800 2 4 6 VDS8=5V, ID10 =11A 0 100.00 900 88 65 0.95 100 10µs 80 Power (W) 10.00 ID (Amps) 5 VGS=10V, VDS=15V, ID=8.5A60 1.00 RDS(ON) limited 0.10 1ms DC TJ(Max)=150°C TA=25°C 0.01 0.01 0.1 20 I =8.5A, dI/dt=100A/µs F Biased Safe Figure 9: Maximum Forward Operating Area (Note E) 10 ZθJA Normalized Transient Thermal Resistance 40 VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 1 100 IF=8.5A,10dI/dt=100A/µs VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 45 26 10 15 VDS0.72 (Volts) 20 25 30 1 Figure 8: Capacitance Characteristics 4.5 Maximum Body-Diode Continuous Current 100µs 24 36 29 34.5 0 12 10s 20 30 23 Coss 200 Qg (nC) Figure 7: Gate-Charge Characteristics Qg 1 1 uA 5 100 nA 1.5 40 400 VGS=2.5V, ID=5A 0 0.7 600 Crss VGS=4.5V, ID=8.5A 0 Ciss 1000 0 0.0001 0.001 1100 TJ(Max)=150°C 1.5 TA=25°C 10 1.8 3.75 3.2 3.5 21.5 2.7 0.01 0.1 1 16.8 Pulse Width (s) 10 100 Figure 10: Single Pulse8Power Rating Junction-toAmbient (Note E) 8.5 0.0 40 #DIV/0! A 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR OR USES AS CRITICAL D D=T /T THE CONSUMER MARKET.PAPPLICATIONS on COMPONENTS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 0.01 IN LIFE SUPPORT DEVICES OR SYSTEMS TJ,PK=T A+PDM.ZθJA.RθJA T OUT OF SUCH APPLICATIONS Single Pulse OR USES OF ITS PRODUCTS. AOS PRODUCT DESIGN, RθJA=42°C/W RESERVES THE RIGHT TOonIMPROVE T FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com