AOSMD AON3408

AON3408
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
Features
The AON3408 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance. Standard
Product AON3408 is Pb-free (meets ROHS & Sony
259 specifications).
VVDS
(V)==30V
30V
DS(V)
8.8A (V
(VGS
10V)
IDID==11A
GS==10V)
RRDS(ON)
14.5mΩ
(VGS
(VGS
= 10V)
= 10V)
DS(ON)<<24mΩ
RRDS(ON)
<
<
29mΩ
18mΩ
(V
(V
=
=
4.5V)
4.5V)
DS(ON)
GS
GS
RDS(ON) < 45mΩ (VGS = 2.5V)
Rg,Ciss,Coss,Crss Tested
DFN 3x3
Top View
Bottom View
D
S
D
S
D
S
D
G
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current A
TA=25°C
IDSM
IDM
TA=25°C
±12
V
Junction and Storage Temperature Range
W
1.9
-55 to 150
Symbol
Alpha & Omega Semiconductor, Ltd.
A
3.0
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
7.2
40
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
Units
V
8.5
TA=70°C
Pulsed Drain Current B
Power Dissipation
Maximum
30
RθJA
RθJL
Typ
32
65
25
°C
Max
42
100
35
Units
°C/W
°C/W
°C/W
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AON3408
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250uA, V GS=0V
VDS=24V, V GS=0V
30
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
ID(ON)
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
0.7
VGS=4.5V, VDS=5V
40
TJ=125°C
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
1.5
V
20
24
A
29
VGS=2.5V, ID=5A
34.5
45
VDS=5V, ID=8.8A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
1
34
IS=1A,V GS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Crss
nA
23
Forward Transconductance
26
mΩ
S
0.72
900
VGS=0V, VDS=15V, f=1MHz
uA
100
28
VSD
IS
5
VGS=4.5V, ID=8A
gFS
Units
V
TJ=125°C
VGS=10V, ID=8.8A
Static Drain-Source On-Resistance
Max
1
IDSS
RDS(ON)
Typ
1.0
V
4.0
A
1100
pF
88
pF
65
pF
Ω
VGS=0V, VDS=0V, f=1MHz
0.95
1.5
10
13
VGS=4.5V, VDS=15V, ID=8.5A
1.8
nC
Qgd
Gate Drain Charge
3.75
nC
tD(on)
Turn-On DelayTime
3.2
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=8.8A, dI/dt=100A/µs
16.8
Qrr
Body Diode Reverse Recovery Charge
IF=8.8A, dI/dt=100A/µs
8
VGS=10V, V DS=15V, R L=1.7Ω,
RGEN=3Ω
3.5
ns
21.5
ns
2.7
ns
20
ns
nC
A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
8.5
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
0.0
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. 40
A
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in#DIV/0!
a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev0:Oct. 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
20
10V
50
40
3V
30
2.5V
VGS=10V, ID=8.5A
10
VGS=4.5V,
=2V
VGS
ID=8.5A
0
1
2
0
5
0
VDS (Volts)
Maximum
Body-Diode
Continuous Current
Figure 1:
On-Region Characteristics
1
Normalized On-Resistance
VGS=4.5V
24
1.5
VGS=10V, VDS=15V, ID=8.5A
22
20
1.2
V =10V, VDS=15V, RL=1.8Ω,
0.9 RGEN=3Ω
GS
VGS=10V
18
16
0.6
0
5
10
15
20
-50
IF=8.5A, dI/dt=100A/µs
ID (A)
IFDrain
=8.5A,
dI/dt=100A/µs
Figure 3: On-Resistance vs.
Current
and
Gate Voltage
45
26
1.5
0.72
2
2.5
1
3
-25
0
25
10
1.8
3.75
3.2
3.5
21.5
2.7
50 75
16.8
VGS=10V
ID=8.8A
100 125 150 175
8.5
1.0E+01
0.0
55
1.0E+00
40
ID=8.8A
45
40
125°C
#DIV/0!
1.0E-01
IS (A)
50
RDS(ON) (mΩ)
34.5
Temperature (°C)
8
Figure 4: On-Resistance
vs. Junction
Temperature
60
35
25°C
24
36.0
29.0
900
1100
88
65
ID=8A
0.95
1.5
VGS=4.5V
1.8
26
RDS(ON) (mΩ)
0.5
20
30.0
23
VGS(Volts)
4.5
Figure 2: Transfer Characteristics
28
Qg
1
40
4
VGS=2.5V, ID=5A
V3DS=5V, ID4=11A
125°C
0.7
8
20
0
1 uA
5
100 nA
1.5
12
ID(A)
ID (A)
VDS=5V
16
4.5V
A
125°C
1.0E-02
1.0E-03
30
THIS PRODUCT
HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS
OR USES AS CRITICAL
25°C
25
1.0E-04
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
20
1.0E-05 THE RIGHT TO IMPROVE PRODUCT DESIGN,
OUT OF SUCH APPLICATIONS OR USES
25°COF ITS PRODUCTS. AOS RESERVES
15
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1.0E-06
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AON3408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1200
Capacitance (pF)
4
VGS (Volts)
1400
VDS=15V
ID=8.8A
3
2
VGS=10V, ID=8.5A
1
800
2
4
6
VDS8=5V, ID10
=11A
0
100.00
900
88
65
0.95
100
10µs
80
Power (W)
10.00
ID (Amps)
5
VGS=10V, VDS=15V, ID=8.5A60
1.00
RDS(ON)
limited
0.10
1ms
DC
TJ(Max)=150°C
TA=25°C
0.01
0.01
0.1
20
I =8.5A, dI/dt=100A/µs
F Biased Safe
Figure 9: Maximum Forward
Operating Area (Note E)
10
ZθJA Normalized Transient
Thermal Resistance
40
VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω
1
100
IF=8.5A,10dI/dt=100A/µs
VDS (Volts)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
45
26
10
15
VDS0.72
(Volts)
20
25
30
1
Figure 8: Capacitance Characteristics
4.5
Maximum Body-Diode Continuous Current
100µs
24
36
29
34.5
0
12
10s
20
30
23 Coss
200
Qg (nC)
Figure 7: Gate-Charge Characteristics
Qg
1
1 uA
5
100 nA
1.5
40
400
VGS=2.5V, ID=5A
0
0.7
600
Crss
VGS=4.5V, ID=8.5A
0
Ciss
1000
0
0.0001
0.001
1100
TJ(Max)=150°C
1.5
TA=25°C
10
1.8
3.75
3.2
3.5
21.5
2.7
0.01
0.1
1
16.8
Pulse Width (s)
10
100
Figure 10: Single Pulse8Power Rating Junction-toAmbient (Note E)
8.5
0.0
40
#DIV/0!
A
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED
FOR
OR USES AS CRITICAL
D
D=T
/T THE CONSUMER MARKET.PAPPLICATIONS
on
COMPONENTS
ARE
NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
0.01 IN LIFE SUPPORT DEVICES OR SYSTEMS
TJ,PK=T
A+PDM.ZθJA.RθJA
T
OUT OF SUCH APPLICATIONS
Single Pulse
OR USES OF ITS PRODUCTS.
AOS
PRODUCT DESIGN,
RθJA=42°C/W RESERVES THE RIGHT TOonIMPROVE
T
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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