elm14408aa

Single N-channel MOSFET
ELM14408AA-N
■General description
■Features
ELM14408AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=30V
Id=12A (Vgs=10V)
Rds(on) < 13mΩ (Vgs=10V)
Rds(on) < 16mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
30
V
Symbol
Vds
Gate-source voltage
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Avalanche current
Repetitive avalanche energy
L=0.1mH
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
Vgs
±12
V
Id
12
10
A
1
Idm
Iav
Eav
80
30
100
A
A
mJ
2
2, 5
2, 5
Pd
Tj, Tstg
3.0
2.1
-55 to 150
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
23
Max.
40
Unit
°C/W
48
12
65
16
°C/W
°C/W
Note
1
3
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
Pin name
1
2
3
SOURCE
SOURCE
SOURCE
4
5
GATE
DRAIN
6
DRAIN
7
8
DRAIN
DRAIN
5- 1
D
G
S
Single N-channel MOSFET
ELM14408AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
100
nA
1.5
2.5
V
A
10.5
14.0
16.0
21.0
13.0
48
16.5
mΩ
S
Is=1A, Vgs=0V
0.76
1.00
4.5
V
A
1200
Vgs=0V, Vds=15V, f=1MHz
1020
320
pF
pF
Vgs=0V, Vds=0V, f=1MHz
80
0.25
0.50
pF
Ω
10.3
12.5
nC
Vds=24V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Forward transconductance
Gfs
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Crss
Rg
Gate-source charge
Qgs
Gate-drain charge
Turn-on delay time
Turn-on rise time
Qgd
td(on)
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
0.003
Ta=55°C
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Rds(on)
V
μA
Idss
Static drain-source on-resistance
30
1.000
5.000
Zero gate voltage drain current
Gate threshold voltage
On state drain current
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Vgs=10V, Id=12A
1.0
40
Ta=125°C
Vgs=4.5V, Id=10A
Vds=5V, Id=10A
Qg
2.1
nC
3.9
3.9
5.5
nC
ns
Vgs=10V, Vds=15V
3.0
6.0
ns
td(off) RL=1.2Ω, Rgen=3Ω
tf
19.2
2.6
30.0
5.0
ns
ns
26
18
32
32
ns
nC
tr
trr
Qrr
Vgs=4.5V, Vds=15V, Id=12A
30
mΩ
If=12A, dIf/dt=100A/μs
If=12A, dIf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
5- 2
Single N-channel MOSFET
ELM14408AA-N
■Typical electrical and thermal characteristics
50
10V
40
3.5V
Vds=5V
25
3V
20
30
Id(A)
Id (A)
30
4.5V
20
15
125°C
10
10
5
Vgs=2.5V
0
0
1
2
3
4
5
0.5
Vds (Volts)
Fig 1: On-Region Characteristics
1.5
2
2.5
3
Normalized On-Resistance
1.8
14
Rds(on) (m�)
1
Vgs(Volts)
Figure 2: Transfer Characteristics
16
Vgs=4.5V
12
10
Vgs=10V
8
0
5
10
15
Vgs=10V
Id=10A
1.6
Vgs=4.5V
1.4
1.2
1
0.8
20
0
Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
40
1.0E+01
Id=10A
Vgs=0V
1.0E+00
30
125°C
100
1.0E-01
Is (A)
Rds(on) (m�)
25°C
0
125°C
20
1.0E-02
25°C
10
25°C
1.0E-03
1.0E-04
1.0E-05
0
0
2
4
6
8
0.0
10
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
5- 3
0.2
0.4
0.6
0.8
Vsd (Volts)
Figure 6: Body-Diode Characteristics
1.0
Single N-channel MOSFET
ELM14408AA-N
5
1250
Capacitance (pF)
4
Vgs (Volts)
1500
Vds=15V
Id=12A
3
2
1
Ciss
1000
750
Coss
500
250
0
0
2
4
6
8
10
0
12
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
10.0
100�s
Power (W)
0.1s
1s
1.0
10s
Tj(max)=150°C
Ta=25°C
DC
1
30
20
10
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=40°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
100
1
Pd
0.1
0.01
0.00001
30
Tj(max)=150°C
Ta=25°C
0
0.001
Vds (Volts)
10
15
20
25
Vds (Volts)
Figure 8: Capacitance Characteristics
10
0.1
0.1
10
40
10ms
Z�ja Normalized Transient
Thermal Resistance
Id (Amps)
1ms
5
50
10�s
Rds(on)
limited
Crss
Ton
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
5- 4
100
1000
Single N-channel MOSFET
ELM14408AA-N
4
Ta=25°C
60
Power Dissipation (W)
Id(A), Peak Avalanche Current
70
50
40
30
ta �
20
L� Id
BV � Vdd
10
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Avalanche capability
5- 5
3
2
10s
1
SteadyState
0
25
50
75
100
125
Tcase (°C)
Figure 13: Power De-rating (Note A)
150