Single N-channel MOSFET ELM14408AA-N ■General description ■Features ELM14408AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=12A (Vgs=10V) Rds(on) < 13mΩ (Vgs=10V) Rds(on) < 16mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note 30 V Symbol Vds Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Avalanche current Repetitive avalanche energy L=0.1mH Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range Vgs ±12 V Id 12 10 A 1 Idm Iav Eav 80 30 100 A A mJ 2 2, 5 2, 5 Pd Tj, Tstg 3.0 2.1 -55 to 150 W °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol t≤10s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. 23 Max. 40 Unit °C/W 48 12 65 16 °C/W °C/W Note 1 3 ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. Pin name 1 2 3 SOURCE SOURCE SOURCE 4 5 GATE DRAIN 6 DRAIN 7 8 DRAIN DRAIN 5- 1 D G S Single N-channel MOSFET ELM14408AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V 100 nA 1.5 2.5 V A 10.5 14.0 16.0 21.0 13.0 48 16.5 mΩ S Is=1A, Vgs=0V 0.76 1.00 4.5 V A 1200 Vgs=0V, Vds=15V, f=1MHz 1020 320 pF pF Vgs=0V, Vds=0V, f=1MHz 80 0.25 0.50 pF Ω 10.3 12.5 nC Vds=24V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Forward transconductance Gfs Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Crss Rg Gate-source charge Qgs Gate-drain charge Turn-on delay time Turn-on rise time Qgd td(on) Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge 0.003 Ta=55°C Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Rds(on) V μA Idss Static drain-source on-resistance 30 1.000 5.000 Zero gate voltage drain current Gate threshold voltage On state drain current Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Vgs=10V, Id=12A 1.0 40 Ta=125°C Vgs=4.5V, Id=10A Vds=5V, Id=10A Qg 2.1 nC 3.9 3.9 5.5 nC ns Vgs=10V, Vds=15V 3.0 6.0 ns td(off) RL=1.2Ω, Rgen=3Ω tf 19.2 2.6 30.0 5.0 ns ns 26 18 32 32 ns nC tr trr Qrr Vgs=4.5V, Vds=15V, Id=12A 30 mΩ If=12A, dIf/dt=100A/μs If=12A, dIf/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 5- 2 Single N-channel MOSFET ELM14408AA-N ■Typical electrical and thermal characteristics 50 10V 40 3.5V Vds=5V 25 3V 20 30 Id(A) Id (A) 30 4.5V 20 15 125°C 10 10 5 Vgs=2.5V 0 0 1 2 3 4 5 0.5 Vds (Volts) Fig 1: On-Region Characteristics 1.5 2 2.5 3 Normalized On-Resistance 1.8 14 Rds(on) (m�) 1 Vgs(Volts) Figure 2: Transfer Characteristics 16 Vgs=4.5V 12 10 Vgs=10V 8 0 5 10 15 Vgs=10V Id=10A 1.6 Vgs=4.5V 1.4 1.2 1 0.8 20 0 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 40 1.0E+01 Id=10A Vgs=0V 1.0E+00 30 125°C 100 1.0E-01 Is (A) Rds(on) (m�) 25°C 0 125°C 20 1.0E-02 25°C 10 25°C 1.0E-03 1.0E-04 1.0E-05 0 0 2 4 6 8 0.0 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 5- 3 0.2 0.4 0.6 0.8 Vsd (Volts) Figure 6: Body-Diode Characteristics 1.0 Single N-channel MOSFET ELM14408AA-N 5 1250 Capacitance (pF) 4 Vgs (Volts) 1500 Vds=15V Id=12A 3 2 1 Ciss 1000 750 Coss 500 250 0 0 2 4 6 8 10 0 12 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10.0 100�s Power (W) 0.1s 1s 1.0 10s Tj(max)=150°C Ta=25°C DC 1 30 20 10 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=40°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 100 1 Pd 0.1 0.01 0.00001 30 Tj(max)=150°C Ta=25°C 0 0.001 Vds (Volts) 10 15 20 25 Vds (Volts) Figure 8: Capacitance Characteristics 10 0.1 0.1 10 40 10ms Z�ja Normalized Transient Thermal Resistance Id (Amps) 1ms 5 50 10�s Rds(on) limited Crss Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 5- 4 100 1000 Single N-channel MOSFET ELM14408AA-N 4 Ta=25°C 60 Power Dissipation (W) Id(A), Peak Avalanche Current 70 50 40 30 ta � 20 L� Id BV � Vdd 10 0 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Avalanche capability 5- 5 3 2 10s 1 SteadyState 0 25 50 75 100 125 Tcase (°C) Figure 13: Power De-rating (Note A) 150