Single N-channel MOSFET ELM34404AA-N ■General description ■Features ELM34404AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=60V Id=5.5A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note 60 V ±20 V Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current Pulsed drain current 5.5 4.5 20 Id Idm Tc=25°C Power dissipation Tc=70°C Junction and storage temperature range Pd Tj, Tstg A A 2.5 3 W 1.3 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Steady-state Symbol Rθja ■Pin configuration Typ. Max. 50 Unit °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. Pin name 1 2 SOURCE SOURCE 3 4 5 SOURCE GATE DRAIN 6 7 DRAIN DRAIN 8 DRAIN 4-1 D G S Single N-channel MOSFET ELM34404AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=40V, Vgs=0V, Ta=55°C 10 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge 1.0 20 1.5 μA ±100 nA 2.5 V A Vgs=10V, Id=5.5A 42 55 mΩ Vgs=4.5V, Id=4.5A 55 75 mΩ Vds=10V, Id=5.5A If=1A, Vgs=0V 14 1 S V Is 1.3 A Ism 2.6 A Gfs Vsd Ciss 650 pF Coss Vgs=0V, Vds=25V, f=1MHz Crss 80 35 pF pF Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Max. body-diode continuous current 60 Vds=48V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note Vgs=10V, Vds=30V, Id=5.5A 12.5 2.4 18.0 2.6 Vgs=10V, Vds=30V, Id=1A td(off) Rgen=6Ω tf NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%; 2. Independent of operating temperature; 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 1 1 1 1 3 nC nC 2 2 2 2 11 8 20 nC ns 18 ns 2 19 35 ns 2 6 15 ns 2 NIKO-SEM P5506BVG Single N-channel MOSFET N-Channel Logic Level Enhancement SOP-8 Lead-Free Mode Field Effect Transistor ELM34404AA-N ■Typical electrical and thermal characteristics Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V Is - Reverse Drain Current(A) 10 25° C 0.1 -55° C 0.01 0.001 0.0001 4-3 T A = 125° C 1 0 0.6 0.2 0.4 0.8 VSD - Body Diode Forward Voltage(V) 1.0 1.2 NIKO-SEM Single N-channel MOSFET N-Channel Logic Level Enhancement ELM34404AA-N Mode Field Effect Transistor P5506BVG SOP-8 Lead-Free 4-4 4 SEP-30-2004