Single N-channel MOSFET ELM14430AA-N ■General description ■Features ELM14430AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=18A (Vgs=10V) Rds(on) < 5.5mΩ (Vgs=10V) Rds(on) < 7.5mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds 30 V Gate-source voltage Vgs ±20 V Ta=25°C Continuous drain current Ta=70°C Pulsed drain current 18 Id 15 80 Idm Tc=25°C Power dissipation Tc=70°C Junction and storage temperature range Pd Tj, Tstg 3.0 A 1 A 2 W 2.1 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol t≤10s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. 31 Max. 40 Unit °C/W 59 16 75 24 °C/W °C/W Note 1 3 ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 Pin name SOURCE 2 3 4 SOURCE SOURCE GATE 5 6 DRAIN DRAIN 7 DRAIN 8 DRAIN 4-1 D G S Single N-channel MOSFET ELM14430AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V 100 nA 1.8 2.5 V A 4.7 5.5 6.5 8.0 Vgs=4.5V, Id=15A Vds=5V, Id=18A 6.2 82 7.5 mΩ S Is=1A, Vgs=0V 0.7 1.0 4.5 V A Vgs=0V, Vds=15V, f=1MHz 4660 425 6060 638 7270 960 pF pF Vgs=0V, Vds=0V, f=1MHz 240 0.20 355 0.45 530 0.90 pF Ω 80 103 124 nC 37 48 58 nC Vds=24V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±20V Forward transconductance Gfs Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge (10V) Crss Rg Total gate charge (4.5V) Qg Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge Ta=55°C Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Rds(on) V μA Idss Static drain-source on-resistance 30 1 5 Zero gate voltage drain current Gate threshold voltage On state drain current Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Vgs=10V, Id=18A 1.0 80 Ta=125°C Qg Vgs=10V, Vds=15V, Id=18A 18 15 mΩ nC nC td(on) 12.0 16.0 ns tr Vgs=10V, Vds=15V td(off) RL=0.83Ω, Rgen=3Ω 8.0 51.5 12.0 70.0 ns ns 8.8 33.5 22.0 14.0 44.0 30.0 ns ns nC tf trr Qrr If=18A, dIf/dt=100A/μs If=18A, dIf/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single N-channel MOSFET ELM14430AA-N ■Typical electrical and thermal characteristics 60 60 10V Id (A) 40 50 4.5V 3.5V Vds=5V 40 30 Id(A) 50 3.0V 125°C 30 20 20 10 10 Vgs=2.5V 0 25°C 0 0 1 2 3 4 5 1 1.5 Vds (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 Vgs(Volts) Figure 2: Transfer Characteristics 7.0 Normalized On-Resistance 1.6 6.5 Rds(on) (m� ) 2 Vgs=4.5V 6.0 5.5 5.0 Vgs=10V 4.5 4.0 3.5 Vgs=4.5V Id=18A 1.4 Vgs=10V 1.2 1 0.8 0 20 40 60 80 100 0 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 16 1.0E+01 1.0E+00 Id=18A Is (A) Rds(on) (m� ) 12 125°C 8 125°C 25°C 1.0E-02 1.0E-03 25°C 4 1.0E-01 1.0E-04 1.0E-05 0 2 4 6 8 0.0 10 0.2 0.4 0.6 0.8 Vsd (Volts) Figure 6: Body-Diode Characteristics Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 1.0 Single N-channel MOSFET ELM14430AA-N 10 Capacitance (pF) 8 Vgs (Volts) 8000 Vds=15V Id=18A 6 4 2 4000 2000 0 0 20 40 60 80 100 Ciss 6000 Crss 0 120 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics Rds(on) limited 100�s 10ms 10.0 Tj(max)=150°C Ta=25°C Z�ja Normalized Transient Thermal Resistance 30 60 40 0 0.001 Vds (Volts) 10 100 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=40°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 25 20 0.1 1 20 Tj(max)=150°C Ta=25°C 80 1ms 0.1s 0.1 15 100 10�s 1s 10s DC 1.0 10 Vds (Volts) Figure 8: Capacitance Characteristics Power (W) Id (Amps) 100.0 Coss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 0.01 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000