Single N-channel MOSFET ELM14418AA-N ■General description ■Features ELM14418AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • Vds=30V Id=11.5A (Vgs=20V) Rds(on) < 14mΩ (Vgs=20V) Rds(on) < 17mΩ (Vgs=10V) Rds(on) < 40mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note 30 V ±25 V Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current Pulsed drain current 11.5 Id 9.7 40 Idm Tc=25°C Power dissipation Tc=70°C Junction and storage temperature range Pd Tj, Tstg 3.0 A 1 A 2 W 2.1 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol t≤10s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. 31 Max. 40 Unit °C /W 59 16 75 24 °C /W °C /W Note 1 3 ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 Pin name SOURCE SOURCE 3 4 5 SOURCE GATE DRAIN 6 7 8 DRAIN DRAIN DRAIN 4-1 D G S Single N-channel MOSFET ELM14418AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition BVdss Id=250μA, Vgs=0V Idss 30 1 Vds=24V, Vgs=0V Ta=55°C 5 Gate-body leakage current Gate threshold voltage Igss Vds=0V, Vgs=±25V Vgs(th) Vds=Vgs, Id=250μA 1.5 On state drain current Id(on) Vgs=10V, Vds=5V 40 Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge(10V) Total gate charge(4.5V) Gate-source charge Rds(on) Gfs Vsd V 2.4 Vgs=10V, Id=10A 9.8 14.2 12.3 14.0 18.0 17.0 Vgs=4.5V, Id=5A Vds=5V, Id=10A Is=1A, Vgs=0V 32.0 22 0.76 40.0 Vgs=20V Id=11.5A Ta=125°C 14 Ciss Qg Qg Qgs Vgs=0V, Vds=15V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Vgs=10V, Vds=15V, Id=11.5A nA V A Is Coss Crss Rg 100 3.0 μA mΩ mΩ 1.00 mΩ S V 4.3 A 758 pF 180 128 0.7 pF pF Ω 16.6 8.6 2.5 nC nC nC Gate-drain charge Turn-on delay time Turn-on rise time Qgd td(on) tr Vgs=10V, Vds=15V 4.9 5.4 5.1 nC ns ns Turn-off delay time td(off) RL=1.3Ω, Rgen=3Ω tf 14.4 3.7 ns ns 16.9 6.6 ns nC Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge trr Qrr If=11.5A, dIf/dt=100A/μs If=11.5A, dIf/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single N-channel MOSFET ELM14418AA-N ■Typical electrical and thermal characteristics 50 30 10V 45 6V 7V 35 Id (A) 25 Vds=5V 20 5V 30 25 Id(A) 40 3.5V 20 15 125°C 10 15 Vgs=3V 10 5 0 0 1 2 3 4 25°C 5 0 5 2 2.5 Vds (Volts) Fig 1: On-Region Characteristics 4 4.5 5 5.5 1.8 Normalized On-Resistance 40 Vgs=4.5V 35 Rds(on) (m� ) 3.5 Vgs(Volts) Figure 2: Transfer Characteristics 45 30 25 20 15 Vgs=10V 10 Vgs=20V 5 0 5 10 15 20 25 Id=10A 1.6 Vgs=20V 1.2 1 0.8 30 0 1.0E+01 50 1.0E+00 Id=10A 50 75 100 125 150 175 1.0E-01 Is (A) 30 25 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 40 Vgs=10V 1.4 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Rds(on) (m� ) 3 125°C 125°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 25°C 10 1.0E-05 0 0 5 10 15 0.0 20 0.2 0.4 0.6 0.8 Vsd (Volts) Figure 6: Body-Diode Characteristics Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 1.0 Single N-channel MOSFET ELM14418AA-N 10 1000 Capacitance (pF) 8 Vgs (Volts) 1200 Vds=15V Id=11.5A 6 4 Ciss 800 600 400 2 Coss 200 Crss 0 0 4 8 12 16 0 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics Rds(on) limited 100�s 1ms 0.1s 1.0 1s Tj(max)=150°C Ta=25°C DC 1 10 100 20 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=40°C/W 30 30 0 0.001 Vds (Volts) 10 25 10 10s 0.1 0.1 20 Tj(max)=150°C Ta=25°C 40 10�s Power (W) Id (Amps) 50 10ms Z� ja Normalized Transient Thermal Resistance 15 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 0.01 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000